Mikhail Piskarev
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Mikhail Piskarev has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Alexander Alexeevich Kuznetsov
N. S. Enikolopov Institute of Synthetic Polymeric Materials, Russian Academy of Sciences, Moscow, Russian Federation
1 shared publication - Alexander Zinoviev
Enikolopov Institute of Syntetic Polymer Materials RAS, 117393 Moscow, Russia
1 shared publication - Boris Senatulin
Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISIS, 119049 Moscow, Russia
1 shared publication - Daria A. Syrtsova
A.V. Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, 29, Leninskii Prospect, 119991 Moscow, Russia
1 shared publication - Elena A. Skryleva
National University of Science and Technology “MISiS”, Moscow, Russia
1 shared publication - Mikhail S. Piskarev
Enikolopov Institute of Synthetic Polymer Materials, Russian Academy of Sciences, Moscow, Russia
1 shared publication
Latest Publications
- Open Access
Depth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge
Previously, we found that modification of the membrane surface from polyvinyltrimethylsilane (PVTMS) by treatment with low-temperature plasma induced by low pressure DC discharge leads to a significant increase in gas separation characteristics. To understand the mechanism of this phenomenon, in this article XPS combined with precision etching 10 keV beam of Ar2500+ clusters was used for depth profiling of PVTMS spin-coated films before and after DC discharge treatment. The etching craters depths were measured by stylus surface profiler. The average etching rate of the untreated PVTMS film by Ar2500+ clusters was defined (230 nm/min). It was found that the low temperature plasma treatment of PVTMS leads to a sharp increase in the oxygen concentration on a surface with a simultaneous decrease in the carbon content. The experimental data obtained indicate also that the treatment of PVTMS film by plasma leads not only to a change in the chemical structure of the surface, but also to the formation of a gradient subsurface layer with a thickness of about 50 nm.
Open AccessDepth Profile Analysis of the Modified Layer of Poly(vinyltrimethylsilane) Films Treated by Direct-Current Discharge
Previously, we found that modification of the membrane surface from polyvinyltrimethylsilane (PVTMS) by treatment with low-temperature plasma induced by low pressure DC discharge leads to a significant increase in gas separation characteristics. To understand the mechanism of this phenomenon, in this article XPS combined with precision etching 10 keV beam of Ar2500+ clusters was used for depth profiling of PVTMS spin-coated films before and after DC discharge treatment. The etching craters depths were measured by stylus surface profiler. The average etching rate of the untreated PVTMS film by Ar2500+ clusters was defined (230 nm/min). It was found that the low temperature plasma treatment of PVTMS leads to a sharp increase in the oxygen concentration on a surface with a simultaneous decrease in the carbon content. The experimental data obtained indicate also that the treatment of PVTMS film by plasma leads not only to a change in the chemical structure of the surface, but also to the formation of a gradient subsurface layer with a thickness of about 50 nm.