Chun Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Chun Wang has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Chang Fu Dee
National yang Ming Chiao Tung University
1 shared publication - Edward Yi Chang
National yang Ming Chiao Tung University
1 shared publication - Heng-Tung Hsu
National yang Ming Chiao Tung University
1 shared publication - Yi-Fan Tsao
National yang Ming Chiao Tung University
1 shared publication - Yu-Chiao Chen
Department of Electrical Engineering, National Yang Ming Chiao Tung University, 1001 Tah Hsueh Road, Hsinchu 30010, Taiwan
1 shared publication - Yueh-Chin Lin
International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu City 30010, Taiwan
1 shared publication
Latest Publications
- Open Access
Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (Vth) of 0.13 V and a maximum transconductance (gm) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al2O3 layer with a smooth surface which also suppressed the current collapse phenomenon.
Open AccessAdoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (Vth) of 0.13 V and a maximum transconductance (gm) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al2O3 layer with a smooth surface which also suppressed the current collapse phenomenon.