Naireeta Deb

Widespread adoption of electric vehicles has presented the challenges of short range and prolonged charging time. Going forward, extremely fast charging is the only solution to these problems. However, the typical Silicon power electronics supported 400 V electric vehicle powertrain cannot live up to this challenge. Limitations include the huge cable size, heating of equipment due to high current and user safety, to name a few. In this paper, we have analyzed an 800 V EV powertrain using power electronics based on silicon carbide. In order to implement 800 V powertrain, the complete reconsideration of the electrical system is imperative. In this paper we have presented the implementation of Silicon Carbide based Power electronics to operate an 800 V powertrain and evaluate it against the 800 V Si powertrain. Details of drivetrain, inverter, and auxiliary power units in high voltage charging (Megawatt Level) system are presented in this research.

The expansion of electric vehicles made the expansion of charging infrastructure rudimentary to keep up with this developing technology that helps people in a myriad of ways. The main drawback in electric vehicle charging, however, is the time consumed to charge a vehicle. The fast charging of electric vehicles solves this problem thus making it a lucrative technology for consumers. However, the fast charging technology is not without its limitations. In this paper we have identified the technology gaps in EV fast charging stations mostly focused on the extremely fast charging topology. It will help pave a path for researchers to direct their effort in a consolidated manner to contribute to the fast charging infrastructure. A thorough review of all aspects and limitations of existing extremely fast charging (XFC) stations have been identified and supporting data are provided. The importance of DC power network based on free fuel energy sources and silicon carbide-based power electronics are proposed to provide ultra-low cost and ultra-high speed XFC stations.