Baizhong Li
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Baizhong Li has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
- Bin Wang
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
1 shared publication - Changtai Xia
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences 1 , Shanghai 201800, China
1 shared publication - Hongji Qi
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
1 shared publication - Lu Zhang
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
1 shared publication - Mingyan Pan
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
1 shared publication - Peixiong Zhang
Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
1 shared publication
Latest Publications
- Open Access
β-Ga2O3 Used as a Saturable Sbsorber to Realize Passively Q-Switched Laser Output
β-Ga2O3 crystals have attracted great attention in the fields of photonics and photoelectronics because of their ultrawide band gap and high thermal conductivity. Here, a pure β-Ga2O3 crystal was successfully grown by the optical floating zone (OFZ) method, and was used as a saturable absorber to realize a passively Q-switched all-solid-state 1 μm laser for the first time. By placing the as-grown β-Ga2O3 crystal into the resonator of the Nd:GYAP solid-state laser, Q-switched pulses at the center wavelength of 1080.4 nm are generated under a output coupling of 10%. The maximum output power is 191.5 mW, while the shortest pulse width is 606.54 ns, and the maximum repetition frequency is 344.06 kHz. The maximum pulse energy and peak power are 0.567 μJ and 0.93 W, respectively. Our experimental results show that the β-Ga2O3 crystal has great potential in the development of an all-solid-state 1 μm pulsed laser.
Open Accessβ-Ga2O3 Used as a Saturable Sbsorber to Realize Passively Q-Switched Laser Output
β-Ga2O3 crystals have attracted great attention in the fields of photonics and photoelectronics because of their ultrawide band gap and high thermal conductivity. Here, a pure β-Ga2O3 crystal was successfully grown by the optical floating zone (OFZ) method, and was used as a saturable absorber to realize a passively Q-switched all-solid-state 1 μm laser for the first time. By placing the as-grown β-Ga2O3 crystal into the resonator of the Nd:GYAP solid-state laser, Q-switched pulses at the center wavelength of 1080.4 nm are generated under a output coupling of 10%. The maximum output power is 191.5 mW, while the shortest pulse width is 606.54 ns, and the maximum repetition frequency is 344.06 kHz. The maximum pulse energy and peak power are 0.567 μJ and 0.93 W, respectively. Our experimental results show that the β-Ga2O3 crystal has great potential in the development of an all-solid-state 1 μm pulsed laser.