Muhamad Affiq Bin Misran
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Muhamad Affiq Bin Misran has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
- Jun Tae Song
International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan
1 shared publication - Michitaka Ohtaki
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
1 shared publication - Rauf Khan
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
1 shared publication - Reiji Hattori
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
1 shared publication - Tatsumi Ishihara
Department of Automotive Science, Graduate School of Integrated Frontier Science, Kyushu University, Fukuoka, Japan
1 shared publication
Latest Publications
- Open Access
Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain
The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using a non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compared the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibit good electrical properties, as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 × 10−6 A. We patterned all the layers by a photolithography process. Finally, we introduced a SiO2-ESL layer to protect the device from external influence. The results show that the prevention of Cu and the introduced ESL layer enhances the electrical properties of IGZO TFTs.
Open AccessBack-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain
The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using a non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compared the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibit good electrical properties, as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 × 10−6 A. We patterned all the layers by a photolithography process. Finally, we introduced a SiO2-ESL layer to protect the device from external influence. The results show that the prevention of Cu and the introduced ESL layer enhances the electrical properties of IGZO TFTs.