Ji-Won Jung
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Interests
Ji-Won Jung has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
- Jae-Hyung Jang
Department of Energy Engineering, KENTECH Institute of Energy Materials and Devices, Korea Institute of Energy Technology, Naju 58330, Republic of Korea
1 shared publication - Ji-Seon Yoo
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro, Buk-gu, Gwangju 61006, Korea
1 shared publication - Min-Woo Lee
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro, Buk-gu, Gwangju 61006, Korea
1 shared publication - Sung-Tae Kim
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Cheomdangwagi-ro, Buk-gu, Gwangju 61006, Korea
1 shared publication
Latest Publications
- Open Access
- 22 December 2021
- Published by MDPI AG in Applied Sciences
- Vol. 12 (1) , 92
CuInSe2-Based Near-Infrared Photodetector
Near-infrared (NIR) photodetectors have interesting roles in optical fiber communications and biomedical applications. Conventional NIR photodetectors have been realized using InGaAs and Ge, of which the cut-off wavelengths exceed 1500 nm. Si-based photodetectors exhibit limited external quantum efficiency at wavelengths longer than 1000 nm. By synthesizing a CuInSe2 compound on a glass substrate, photodetectors that can detect optical wavelengths longer than 1100 nm have been realized in this study. The bandgap energies of the CuInSe2 thin films were tuned by varying the Cu/In ratio from 1.02 to 0.87. The longest cut-off wavelength (1309 nm) was obtained from a CuInSe2 thin film having a Cu/In ratio of 0.87. The responsivity of the photodiode was measured under the illumination of a 1064 nm laser light. The photo responses exhibited linear response up to 2.33 mW optical illumination and a responsivity of 0.60 A/W at −0.4 V.
- 22 December 2021
- Published by MDPI AG in Applied Sciences
- Vol. 12 (1) , 92
Open AccessCuInSe2-Based Near-Infrared Photodetector
Near-infrared (NIR) photodetectors have interesting roles in optical fiber communications and biomedical applications. Conventional NIR photodetectors have been realized using InGaAs and Ge, of which the cut-off wavelengths exceed 1500 nm. Si-based photodetectors exhibit limited external quantum efficiency at wavelengths longer than 1000 nm. By synthesizing a CuInSe2 compound on a glass substrate, photodetectors that can detect optical wavelengths longer than 1100 nm have been realized in this study. The bandgap energies of the CuInSe2 thin films were tuned by varying the Cu/In ratio from 1.02 to 0.87. The longest cut-off wavelength (1309 nm) was obtained from a CuInSe2 thin film having a Cu/In ratio of 0.87. The responsivity of the photodiode was measured under the illumination of a 1064 nm laser light. The photo responses exhibited linear response up to 2.33 mW optical illumination and a responsivity of 0.60 A/W at −0.4 V.