Han Wu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Han Wu has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
- Changchun Chai
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
1 shared publication - Fuxing Li
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, People’s Republic of China
1 shared publication - Qi-Shuai Liang
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
1 shared publication - Yingshuo Qin
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
1 shared publication - Yintang Yang
Xidian University
1 shared publication
Latest Publications
- Open Access
- 9 January 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (1) , 106
Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate understanding of the two distinguishing mechanisms. The results show that the upward trend in temperature, the distribution of hot spots, and the thermal mechanism are the main distinctions. The effect of HPM leads to breakdown and unrecoverable thermal damage in the source and drain areas below the gate, while self-heating can only cause heat accumulation in the drain area. This is an important reference for future research on HEMT damage location prediction technology and reliability enhancement.
- 9 January 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (1) , 106
Open AccessStudy of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate understanding of the two distinguishing mechanisms. The results show that the upward trend in temperature, the distribution of hot spots, and the thermal mechanism are the main distinctions. The effect of HPM leads to breakdown and unrecoverable thermal damage in the source and drain areas below the gate, while self-heating can only cause heat accumulation in the drain area. This is an important reference for future research on HEMT damage location prediction technology and reliability enhancement.