L. Yu. Kharkhalis
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
L. Yu. Kharkhalis has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
- Konstantin Glukhov
Department of the Physics of Semiconductors, Uzhhorod National University, 54 Voloshina Str., 88000 Uzhhorod, Ukraine
2 shared publications - T. Babuka
Uzhhorod National University, Pidhirna Street 46, Uzhhorod 88000, Ukraine
2 shared publications A. Bulou
1 shared publication- Alexander V. Gomonnai
Institute of Electron Physics, Nat. Acad. Sci. Ukr
1 shared publication I. Babuka
1 shared publicationM. Makowska-Janusik
1 shared publication
Latest Publications
- 6 November 2025
- Published by Elsevier in Current Applied Physics
- Vol. 83, 120-127
Electronic, vibration, and elastic properties of the layered In4/3P2S6 semiconducting crystal
- 6 November 2025
- Published by Elsevier in Current Applied Physics
- Vol. 83, 120-127
Electronic, vibration, and elastic properties of the layered In4/3P2S6 semiconducting crystal
- 1 January 2022
- Published by AIP Publishing in Low Temperature Physics
- Vol. 48 (1) , 57-63
The first-principle study of substitutional impurities’ effect on elastic properties of TlInS2 layered crystal
The elastic and vibrational properties of the TIInS2 and TlIn(S0.75Se0.25)2 crystals were first calculated applying DFT/PBE method augmented by dispersion correction (DFT/PBE-D). The elastic constants Cij, bulk modulus B, Young's modulus E, shear modulus G, Poisson's ratio σ, and coefficient B/G were calculated for the studied crystals. The phonon energy dispersion curves and partial densities of the phonon states for the TIInS2 and TlIn(S0.75Se0.25)2 were also calculated. The obtained data are comparable with the experimental results. Anomalies occurring in the phonon energies observed for the TlIn(S0.75Se0.25)2 crystal were explained.
- 1 January 2022
- Published by AIP Publishing in Low Temperature Physics
- Vol. 48 (1) , 57-63
The first-principle study of substitutional impurities’ effect on elastic properties of TlInS2 layered crystal
The elastic and vibrational properties of the TIInS2 and TlIn(S0.75Se0.25)2 crystals were first calculated applying DFT/PBE method augmented by dispersion correction (DFT/PBE-D). The elastic constants Cij, bulk modulus B, Young's modulus E, shear modulus G, Poisson's ratio σ, and coefficient B/G were calculated for the studied crystals. The phonon energy dispersion curves and partial densities of the phonon states for the TIInS2 and TlIn(S0.75Se0.25)2 were also calculated. The obtained data are comparable with the experimental results. Anomalies occurring in the phonon energies observed for the TlIn(S0.75Se0.25)2 crystal were explained.