Hak-Gyeong Kim
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Hak-Gyeong Kim has a total of 3 co-authors. Here are the top co-authors by number of shared publications:
- Da-Hee Hong
Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 15073, Korea
1 shared publication - Hee Chul Lee
Department of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea
1 shared publication - Jae-Hoon Yoo
Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 15073, Korea
1 shared publication
Latest Publications
- Open Access
- 5 February 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (3) , 548
Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
HfxZr1−xO2 (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (Pr) and fatigue endurance of these films. To overcome these limitations, in this study, HZO thin films were fabricated via plasma-enhanced atomic layer deposition (PEALD), and the effects of the deposition and post-annealing temperatures on the density, crystallinity, and electrical properties of the thin films were analyzed. The thin films obtained via PEALD were characterized using cross-sectional transmission electron microscopy images and energy-dispersive spectroscopy analysis. An HZO thin film deposited at 180 °C exhibited the highest o-phase proportion as well as the highest density. By contrast, mixed secondary phases were observed in a thin film deposited at 280 °C. Furthermore, a post-annealing temperature of 600 °C yielded the highest thin film density, and the highest 2Pr value and fatigue endurance were obtained for the film deposited at 180 °C and post-annealed at 600 °C. In addition, we developed three different methods to further enhance the density of the films. Consequently, an enhanced maximum density and exceptional fatigue endurance of 2.5 × 107 cycles were obtained.
- 5 February 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (3) , 548
Open AccessEffect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
HfxZr1−xO2 (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (Pr) and fatigue endurance of these films. To overcome these limitations, in this study, HZO thin films were fabricated via plasma-enhanced atomic layer deposition (PEALD), and the effects of the deposition and post-annealing temperatures on the density, crystallinity, and electrical properties of the thin films were analyzed. The thin films obtained via PEALD were characterized using cross-sectional transmission electron microscopy images and energy-dispersive spectroscopy analysis. An HZO thin film deposited at 180 °C exhibited the highest o-phase proportion as well as the highest density. By contrast, mixed secondary phases were observed in a thin film deposited at 280 °C. Furthermore, a post-annealing temperature of 600 °C yielded the highest thin film density, and the highest 2Pr value and fatigue endurance were obtained for the film deposited at 180 °C and post-annealed at 600 °C. In addition, we developed three different methods to further enhance the density of the films. Consequently, an enhanced maximum density and exceptional fatigue endurance of 2.5 × 107 cycles were obtained.