Vasileios Fotopoulos

Two‐dimensional (2D) transition metal dichalcogenides (TMDs) are being explored in electronic and optoelectronic applications, including electrochemical random‐access memories (ECRAMs). ECRAMs are three‐terminal electrochemical neuromorphic devices in which a gate bias inserts or extracts ions (e.g., H ⁺ ) into or from a channel through a solid electrolyte, thereby modulating its conductivity. In thin‐film oxide channels, post‐pulse ion diffusion into the channel depth gives rise to a slow transient in obtaining the stable conductance state. Monolayer 2D TMD channels eliminate channel depth and could remove this contribution to transient, accelerating device programming. However, whether H insertion can modulate conductivity in 2D TMD channels remains to be determined. Here, we assess hydrogen incorporation at monolayer MoS ₂ /SiO ₂ interfaces using atomistic simulations with varying SiO ₂ surface terminations. In the absence of sulfur vacancies, H favors incorporation on the SiO ₂ surface when dangling bonds are present, leaving MoS ₂ electronically decoupled from H. Once the oxide surface is saturated, H adsorbs onto or incorporates into MoS ₂ , acting as an n‐type dopant. With sulfur vacancies, H stably incorporates into the vacancy and produces a similar n‐type effect. We experimentally verified these predictions in protonic ECRAM devices with monolayer MoS ₂ channels: hydrogen insertion increased conductance, while hydrogen extraction decreased it, consistent with electron doping. Our findings confirm that H can modulate the conductivity of 2D monolayer MoS ₂ channel at the interface with oxide electrolytes in ECRAMs and provide the underlying mechanisms.

The mechanical properties of CuTi alloys have been characterized extensively through experimental studies. However, a detailed understanding of why the strength of Cu increases after a small fraction of Ti atoms are added to the alloy is still missing. In this work, we address this question using density functional theory (DFT) and molecular dynamics (MD) simulations with the modified embedded atom method (MEAM) interatomic potentials. First, we performed calculations of the uniaxial tension deformations of small bicrystalline Cu cells using DFT static simulations. We then carried out uniaxial tension deformations on much larger bicrystalline and polycrystalline Cu cells by using MEAM MD simulations. In bicrystalline Cu, the inclusion of Ti increases the grain boundary separation energy and the maximum tensile stress. The DFT calculations demonstrate that the increase in the tensile stress can be attributed to an increase in the local charge density arising from Ti. MEAM simulations in larger bicrystalline systems have shown that increasing the Ti concentration decreases the density of the stacking faults. This observation is enhanced in polycrystalline Cu, where the addition of Ti atoms, even at concentrations as low as 1.5 atomic (at.) %, increases the yield strength and elastic modulus of the material compared to pure Cu. Under uniaxial tensile loading, the addition of small amounts of Ti hinders the formation of partial Shockley dislocations in the grain boundaries of Cu, leading to a reduced level of local deformation. These results shed light on the role of Ti in determining the mechanical properties of polycrystalline Cu and enable the engineering of grain boundaries and the inclusion of Ti to improve degradation resistance.

Metallic dopants have the potential to increase the mechanical strength of polycrystalline metals. These elements are expected to aggregate in regions of lower coordination, such as grain boundaries. At the grain boundaries, they can have a beneficial (toughening) or detrimental effect (e.g. grain boundary embrittlement). In this study, we employ Density Functional Theory (DFT) to compute the segregation energies of various metallic and other non-metallic elements to determine their effect when introduced in a symmetric Cu grain boundary. The study results may be used to qualitatively rank the beneficial effect of certain metallic elements, such as V, Zr, and Ag, as well as the strong weakening effect of non-metallic impurities like O, S, F and P. Furthermore, the induced local distortion is found to be proportional to the weakening effect of the elements.

The mechanical properties of Cu-Ti alloys have been characterized extensively through experimental studies. However, a detailed understanding of why the strength of Cu increases after a small fraction of Ti atoms is added to the alloy is still missing. In this work, we address this question using density functional theory (DFT) and molecular dynamics (MD) simulations with modified embedded atom method (MEAM) interatomic potentials. First, we performed calculations of uniaxial tension deformations of small bicrystalline Cu cells using DFT static simulations. We then carried out uniaxial tension deformations on much larger bicrystalline and polycrystalline Cu cells using MEAM MD simulations. In bicrystalline Cu, the inclusion of Ti increases the grain boundary separation energy and maximum tensile stress. The DFT calculations demonstrate that the increase in tensile stress can be attributed to an increase in the local charge density arising from Ti. MEAM simulations in larger bicrystalline systems have shown that increasing the Ti concentration decreases the density of stacking faults. This observation is enhanced in polycrystalline Cu, where the addition of Ti atoms, even at concentrations as low as 1.5 at.%, increases the yield strength and elastic modulus of the material compared to pure Cu. Under uniaxial tensile loading, the addition of small amounts of Ti hinders the formation of partial Shockley dislocations in the grain boundaries of Cu, leading to reduced local deformation. These results shed light on the role of Ti in determining the mechanical properties of polycrystalline Cu and will enable the engineering of grain boundaries and the inclusion of Ti to improve degradation resistance.

Hydrogen embrittlement is a prime cause of several degradation effects in metals. Since grain boundaries (GBs) act efficiently as sinks for hydrogen atoms, H is thought to segregate in these regions, affecting the local formation of dislocations. However, it remains unclear at which concentrations H begins to play any role in the mechanical properties of Cu. In the current study, we use density functional theory (DFT) to assess the accuracy of a bond order potential (BOP) in simulating the segregation of H in Cu GB. BOP accurately predicts the most favorable segregation sites of H in Cu GB, along with the induced lattice relaxation effects. H is found to weaken the crystal by reducing the GB separation energy. Classical molecular dynamics (MD) simulations using BOP are performed to evaluate the concentration of H in bicrystalline Cu required to substantially impact the crystal's mechanical strength. For concentrations higher than 10 mass ppm, H significantly reduces the yield strength of bicrystalline Cu samples during uniaxial tensile strain application. This effect was attributed to the fact that H interstitials within the GB promoted the formation of partial dislocations.