Yoseop Lee
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Yoseop Lee has a total of 3 co-authors. Here are the top co-authors by number of shared publications:
- Seung-Eon Ahn
Department of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea
1 shared publication - Sungmun Song
Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Siheung 15073, Korea
1 shared publication - Woori Ham
Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Siheung 15073, Korea
1 shared publication
Latest Publications
- Open Access
Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications
Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarization (below 10 nm) and high compatibility with complementary metal-oxide-semiconductor (CMOS) processes. In this study, a Si-doped HfO2-based FTJ device with a metal-ferroelectric-insulator-semiconductor (MFIS) structure was proposed to maximize the tunneling electro-resistance (TER) effect. The potential barrier modulation effect under applied varying voltage was analyzed, and the possibility of its application as a non-volatile memory device was presented through stability assessments such as endurance and retention tests.
Open AccessSi-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications
Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarization (below 10 nm) and high compatibility with complementary metal-oxide-semiconductor (CMOS) processes. In this study, a Si-doped HfO2-based FTJ device with a metal-ferroelectric-insulator-semiconductor (MFIS) structure was proposed to maximize the tunneling electro-resistance (TER) effect. The potential barrier modulation effect under applied varying voltage was analyzed, and the possibility of its application as a non-volatile memory device was presented through stability assessments such as endurance and retention tests.