Kejia Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Kejia Wang has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Zhiyuan Cheng
College of Integrated Circuits, Zhejiang University, Hangzhou, China
2 shared publications - Bing Zhou
Key Laboratory of New Processing Technology for Nonferrous Metals and Materials of Ministry of Education, School of Materials Science and Engineering, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, Guilin 541004, China
1 shared publication - Jiafu Weng
School of Materials Science and Engineering, Key Laboratory of New Processing Technology for Nonferrous Metals and Materials of Ministry of Education, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, Guilin 541004, China
1 shared publication - Ningping Shi
School of Materials Science and Engineering, Key Laboratory of New Processing Technology for Nonferrous Metals and Materials of Ministry of Education, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, Guilin 541004, China
1 shared publication Yichun Zhang
School of Micro-Nanoelectronics, Zhejiang University, Hangzhou, China
1 shared publication- Yunyan Zhang
College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China
1 shared publication
Latest Publications
- Open Access
- 15 October 2022
- Published by Springer Nature in Discover Nano
- Vol. 17 (1) , 1-6
Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate
The material quality of III-nitrides is severely limited by the lack of cost-effective substrates with suitable lattice and thermal expansion coefficients. A suspended ultrathin silicon membrane substrate ( $$\sim$$ 16 nm), fabricated by an easy process on SOI substrates, is thus designed for nitride epitaxial growth, which can effectively release the strain in the epi-layers, and has demonstrated large-area (Al)GaN growth with a smooth surface and greatly reduced defect density. This research provides a promising CMOS-compatible method for growing cost-effectively high-quality III-nitrides that can be used for the development of high-performance devices.- 15 October 2022
- Published by Springer Nature in Discover Nano
- Vol. 17 (1) , 1-6
Open AccessQuality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate
The material quality of III-nitrides is severely limited by the lack of cost-effective substrates with suitable lattice and thermal expansion coefficients. A suspended ultrathin silicon membrane substrate ( $$\sim$$ 16 nm), fabricated by an easy process on SOI substrates, is thus designed for nitride epitaxial growth, which can effectively release the strain in the epi-layers, and has demonstrated large-area (Al)GaN growth with a smooth surface and greatly reduced defect density. This research provides a promising CMOS-compatible method for growing cost-effectively high-quality III-nitrides that can be used for the development of high-performance devices. - Open Access
- 29 April 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (5) , 702
Optimization AlGaN/GaN HEMT with Field Plate Structures
AlGaN/GaN HEMTs with several different designs of field plate structure are studied for device optimization purposes. To increase device breakdown voltage, optimal dimensions of field plates were first investigated using Silvaco TCAD software, and the electrical characteristics of the devices are analyzed. Several devices were designed and fabricated based on the simulation results. It has been confirmed that the gate-source composite field plate (SG-FP) has a higher breakdown voltage than other types of field plate structures, with FOM reaches 504 MW/cm−2, showing that the device with SG-FP structure outperforms the other three structures. The experiment and simulation verify that the gate-source composite field plate optimizes FOM by increasing the breakdown voltage and reducing the intrinsic on-resistance so that the device has better electrical performance and a wider application range.
- 29 April 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (5) , 702
Open AccessOptimization AlGaN/GaN HEMT with Field Plate Structures
AlGaN/GaN HEMTs with several different designs of field plate structure are studied for device optimization purposes. To increase device breakdown voltage, optimal dimensions of field plates were first investigated using Silvaco TCAD software, and the electrical characteristics of the devices are analyzed. Several devices were designed and fabricated based on the simulation results. It has been confirmed that the gate-source composite field plate (SG-FP) has a higher breakdown voltage than other types of field plate structures, with FOM reaches 504 MW/cm−2, showing that the device with SG-FP structure outperforms the other three structures. The experiment and simulation verify that the gate-source composite field plate optimizes FOM by increasing the breakdown voltage and reducing the intrinsic on-resistance so that the device has better electrical performance and a wider application range.