KRKavitha Rajan

Kavitha Rajan

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Kavitha Rajan has a total of 16 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Open Access

    Effect of Scattering Angle in Electron Transport of AlGaN and InGaN

    by T. Vijetha, P. S. Mallick, R. Karthik, Kavitha Rajan

    The scattering angle between electrons plays a very important role for the calculation of scattering probability. The probability of scattering is an essential parameter for the simulation of electron paths. In this work, we calculated the scattering probability with scattering angle in AlGaN and InGaN at 77 K and found that the lower angle scatterings only dominate.


  • Open Access

    Semiconductor Materials for Solar PV Technology and Challenges towards Electrical Engineering

    by M. Siva Ramkumar, R. Felshiya Rajakumari, Nithiyananthan Kannan, R. Premkumar, S. Mohanasundaram, S. Purushotham, D. Ramya, Kavitha Rajan

    The contemporary concern in worldwide power scenario and consumption rate is frightening significantly at a marvelous amount of population, and it originates a very high augment in the electrical energy area. The all-embracing attraction and manufacture of fossil energy is the chief reason in the ecological issues. Due to these relic fuels, the ecological resources get exhausted, and it results in climatic change. Due to these negative aspects, every country puts effort to bring the energy efficiency high with the help of renewable energy. Presently, the solar energy donation worldwide decreases. Contrarily, solar energy contribution to the global energy is highly contrary to nonconventional energy resources. But there is a progress in power generation, and it plays a vital role in solar photovoltaic generation. Gallium nitride and silicon carbide power semiconductors will emerge to bring the efficiency high in the photovoltaic technology. In this work, we will converse about how to increase the efficiency by using gallium nitride.


  • Open Access

    Review and Evaluation of Power Devices and Semiconductor Materials Based on Si, SiC, and Ga‐N

    by M. Siva Ramkumar, R. Priya, R. Felshiya Rajakumari, Prajoona Valsalan, M. Kalyan Chakravarthi, G. Charlyn Pushpa Latha, S. Mathupriya, Kavitha Rajan

    There is no reservation that semiconductor equipment distorted the world despite the fact of doing the practical experiments and also in research field. Researchers will communicate the process of semiconductor statistics with nearby pupils. In this work, diverse brand of semiconductor equipment was thrashed out with elementary properties and their distinctiveness. One type of semiconductor is differentiated based on energy band gap with an added type of semiconductor equipment. Semiconductor resources are the edifice block for the electrical and electronics component. This work makes an available apt generic argument of materials with the latest discussion and its impact of temperature on different materials, and it also reveals dissimilar parameters such as modern density, porch voltage value, transmission rate, and drain resistance value. Exceptional applications were discussed for divergent semiconductor materials.