Samantha G. Rosenberg
Research Subjects
Samantha G. Rosenberg has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
Alexander C. Kozen
American Society of Engineering Education 1 , 1818 N. Street N.W. Suite 600, Washington, DC 20036
1 shared publicationCharles R. EddyJr.
Power Electronics Materials, U.S. Naval Research Laboratory 8 , 4555 Overlook Ave., SW, Washington, DC 20375
1 shared publicationChris J. Palmstrøm
Materials Department, University of California, Santa Barbara 2 , Santa Barbara, California 93106
1 shared publicationChrista Wagenbach
Department of Physics, Division of Materials Science and Engineering, Boston University 3 , 590 Commonwealth Ave., Boston, Massachusetts 02215
1 shared publicationDaniel J. Pennachio
Materials Department, University of California, Santa Barbara 2 , Santa Barbara, California 93106
1 shared publication- Howie Joress
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
1 shared publication
Latest Publications
- 16 January 2019
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 37 (2) , 020908
Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations
In situ and in vacuo surface studies of in situ and ex situ GaN substrate preparation were conducted to advance fundamental understanding of GaN surface preparation for low temperature atomic layer epitaxial growth. Grazing incidence small angle x-ray scattering (GISAXS) information is complemented with in vacuo x-ray photoelectron spectroscopy and ex situ atomic force microscopy studies to assess different ex situ sample preparation methods to produce the most suitable GaN surface for epitaxy. The authors have determined that a UV-ozone exposure followed by an HF dip produces the cleanest and smoothest GaN surface. They have further determined with GISAXS that subjecting the optimum surface to the established low temperature emulated gallium flash-off atomic level process (ALP) eliminates the need for any nitridation ALP. These ex situ and in situ cleaning preparations result in clean, highly-ordered surfaces that should provide an ideal substrate for high quality crystalline epitaxial films.
- 16 January 2019
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 37 (2) , 020908
Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations
In situ and in vacuo surface studies of in situ and ex situ GaN substrate preparation were conducted to advance fundamental understanding of GaN surface preparation for low temperature atomic layer epitaxial growth. Grazing incidence small angle x-ray scattering (GISAXS) information is complemented with in vacuo x-ray photoelectron spectroscopy and ex situ atomic force microscopy studies to assess different ex situ sample preparation methods to produce the most suitable GaN surface for epitaxy. The authors have determined that a UV-ozone exposure followed by an HF dip produces the cleanest and smoothest GaN surface. They have further determined with GISAXS that subjecting the optimum surface to the established low temperature emulated gallium flash-off atomic level process (ALP) eliminates the need for any nitridation ALP. These ex situ and in situ cleaning preparations result in clean, highly-ordered surfaces that should provide an ideal substrate for high quality crystalline epitaxial films.