Bomeng Zhou
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Bomeng Zhou has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
- Baodian Fan
Key Laboratory of Green Perovskites Application of Fujian Provincial Universities, Fujian Jiangxia University, Fuzhou 350108, China
1 shared publication - Hao Tang
Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China
1 shared publication - Jianzhi Su
Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou 362000, China
1 shared publication - Lingyan Lin
Key Laboratory of Green Perovskites Application of Fujian Provincial Universities, Fujian Jiangxia University, Fuzhou 350108, China
1 shared publication - Linqin Jiang
Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China
1 shared publication - Miao Pan
College of Physics & Information Engineering, Quanzhou Normal University, Quanzhou 362000, China
1 shared publication
Latest Publications
- Open Access
- 30 January 2024
- Published by MDPI AG in Micromachines
- Vol. 15 (2) , 208
Actively Tunable “Single Peak/Broadband” Absorbent, Highly Sensitive Terahertz Smart Device Based on VO2
In recent years, the development of terahertz (THz) technology has attracted significant attention. Various tunable devices for THz waves (0.1 THz–10 THz) have been proposed, including devices that modulate the amplitude, polarization, phase, and absorption. Traditional metal materials are often faced with the problem of non-adjustment, so the designed terahertz devices play a single role and do not have multiple uses, which greatly limits their development. As an excellent phase change material, VO2’s properties can be transformed by external temperature stimulation, which provides new inspiration for the development of terahertz devices. To address these issues, this study innovatively combines metamaterials with phase change materials, leveraging their design flexibility and temperature-induced phase transition characteristics. We have designed a THz intelligent absorber that not only enables flexible switching between multiple functionalities but also achieves precise performance tuning through temperature stimulation. Furthermore, we have taken into consideration factors such as the polarization mode, environmental temperature, structural parameters, and incident angle, ensuring the device’s process tolerance and environmental adaptability. Additionally, by exploiting the principle of localized surface plasmon resonance (LSPR) accompanied by local field enhancement, we have monitored and analyzed the resonant process through electric field characterization. In summary, the innovative approach and superior performance of this structure provide broader insights and methods for THz device design, contributing to its theoretical research value. Moreover, the proposed absorber holds potential for practical applications in electromagnetic invisibility, shielding, modulation, and detection scenarios.
- 30 January 2024
- Published by MDPI AG in Micromachines
- Vol. 15 (2) , 208
Open AccessActively Tunable “Single Peak/Broadband” Absorbent, Highly Sensitive Terahertz Smart Device Based on VO2
In recent years, the development of terahertz (THz) technology has attracted significant attention. Various tunable devices for THz waves (0.1 THz–10 THz) have been proposed, including devices that modulate the amplitude, polarization, phase, and absorption. Traditional metal materials are often faced with the problem of non-adjustment, so the designed terahertz devices play a single role and do not have multiple uses, which greatly limits their development. As an excellent phase change material, VO2’s properties can be transformed by external temperature stimulation, which provides new inspiration for the development of terahertz devices. To address these issues, this study innovatively combines metamaterials with phase change materials, leveraging their design flexibility and temperature-induced phase transition characteristics. We have designed a THz intelligent absorber that not only enables flexible switching between multiple functionalities but also achieves precise performance tuning through temperature stimulation. Furthermore, we have taken into consideration factors such as the polarization mode, environmental temperature, structural parameters, and incident angle, ensuring the device’s process tolerance and environmental adaptability. Additionally, by exploiting the principle of localized surface plasmon resonance (LSPR) accompanied by local field enhancement, we have monitored and analyzed the resonant process through electric field characterization. In summary, the innovative approach and superior performance of this structure provide broader insights and methods for THz device design, contributing to its theoretical research value. Moreover, the proposed absorber holds potential for practical applications in electromagnetic invisibility, shielding, modulation, and detection scenarios.