Miguel Ángel González Morales
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Miguel Ángel González Morales has a total of 21 co-authors. Here are the top co-authors by number of shared publications:
- Gerardo Villa Martínez
Sección de Estudios de Posgrado e Investigación, ESIME-Ticomán, Instituto Politécnico Nacional, Ciudad de México 07340, Mexico
2 shared publications - Jose de Jesus Cruz Bueno
Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional
2 shared publications M. Camacho-Reynoso
2 shared publicationsM. Ramírez-López
2 shared publications- Yenny Lucero Casallas Moreno
SECIHTI-Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional 4 , Av. IPN 2508, Col. Barrio la Laguna Ticomán, Ciudad de México 07340
2 shared publications C. E. Ávila-Crisóstomo
1 shared publication
Latest Publications
- Open Access
- 1 September 2026
- Published by Elsevier in SSRN Electronic Journal
Effect of Thermal Annealing on the Crystalline Quality and Optical Properties of Cubic InxGa1-xN Thin Films
The effects of low-temperature thermal annealing on the structural, optical, and chemical properties of metastable cubic InxGa1-xN thin films grown by plasma-assisted molecular beam epitaxy on a cubic GaN (c-GaN) template deposited on GaAs(001) were investigated. Films grown under different In beam-equivalent pressures were annealed at 400 oC for 30 min and characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS). XRD measurements revealed a substantial reduction in the reflections associated with secondary metallic Ga and In phases and the hexagonal InN (h-InN) phase after annealing, while the main cubic nitride diffraction contribution remained detectable. Micro-Raman spectroscopy revealed improved local crystalline order, particularly in Sample II, which also exhibited a pronounced narrowing of the PL emission after thermal treatment. XPS and PL revealed sample changes in In composition. The contrasting behaviors observed across the sample set indicate that the response to thermal treatment strongly depends on the initial composition and microstructural state of the films. Overall, these results show that post-growth thermal annealing at 400 oC for 30 min effectively reduces the contributions from secondary phases and, under favorable initial conditions, is accompanied by improved local crystalline order and a narrower optical emission in cubic InxGa1-xN thin films.
- 1 September 2026
- Published by Elsevier in SSRN Electronic Journal
Open AccessEffect of Thermal Annealing on the Crystalline Quality and Optical Properties of Cubic InxGa1-xN Thin Films
The effects of low-temperature thermal annealing on the structural, optical, and chemical properties of metastable cubic InxGa1-xN thin films grown by plasma-assisted molecular beam epitaxy on a cubic GaN (c-GaN) template deposited on GaAs(001) were investigated. Films grown under different In beam-equivalent pressures were annealed at 400 oC for 30 min and characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS). XRD measurements revealed a substantial reduction in the reflections associated with secondary metallic Ga and In phases and the hexagonal InN (h-InN) phase after annealing, while the main cubic nitride diffraction contribution remained detectable. Micro-Raman spectroscopy revealed improved local crystalline order, particularly in Sample II, which also exhibited a pronounced narrowing of the PL emission after thermal treatment. XPS and PL revealed sample changes in In composition. The contrasting behaviors observed across the sample set indicate that the response to thermal treatment strongly depends on the initial composition and microstructural state of the films. Overall, these results show that post-growth thermal annealing at 400 oC for 30 min effectively reduces the contributions from secondary phases and, under favorable initial conditions, is accompanied by improved local crystalline order and a narrower optical emission in cubic InxGa1-xN thin films.
- Open Access
- 30 October 2023
- Published by Springer Nature in Journal of Materials Science
- Vol. 58 (41) , 16172-16183
Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties
In $$_x$$ Ga $$_{1-x}$$ As $$_y$$ Sb $$_{1-y}$$ epilayers with a fixed In content of $$\textit{x}$$ = 0.145 were grown on GaSb(100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the quaternary epilayers and substrates was analyzed for different As contents ( $$\textit{y}$$ ) by X-ray $$\omega$$ -2 $$\theta$$ . Epilayers with As content between $$\textit{y}$$ = 0.120 and $$\textit{y}$$ = 0.124 exhibited a positive lattice mismatch, leading to compressive strain. These samples showed a high crystalline quality and flat surfaces, as confirmed by high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). Quaternary alloys with As content between $$\textit{y}$$ = 0.133 and $$\textit{y}$$ = 0.141 displayed a negative lattice mismatch, resulting in tensile strain. Structural defects in these samples were evidenced by HR-XRD and on AFM micrographs. Raman measurements also revealed that lateral strain has a direct impact on the intensities of the LO-like, phonon–plasmon and disorder-activated longitudinal acoustic modes. For all In $$_x$$ Ga $$_{1-x}$$ As $$_y$$ Sb $$_{1-y}$$ films, photoluminescence (PL) spectra showed a bound exciton (BE) transition, with additional features observed in samples under tensile strain, indicating the involvement of native defect centers and donor–acceptor pairs. This study provides new insights into the effect of lateral strain on the crystalline and surface quality, and optical properties of quaternary alloys, relevant for novel optoelectronic applications.- 30 October 2023
- Published by Springer Nature in Journal of Materials Science
- Vol. 58 (41) , 16172-16183
Open AccessDetermination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties
In $$_x$$ Ga $$_{1-x}$$ As $$_y$$ Sb $$_{1-y}$$ epilayers with a fixed In content of $$\textit{x}$$ = 0.145 were grown on GaSb(100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the quaternary epilayers and substrates was analyzed for different As contents ( $$\textit{y}$$ ) by X-ray $$\omega$$ -2 $$\theta$$ . Epilayers with As content between $$\textit{y}$$ = 0.120 and $$\textit{y}$$ = 0.124 exhibited a positive lattice mismatch, leading to compressive strain. These samples showed a high crystalline quality and flat surfaces, as confirmed by high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). Quaternary alloys with As content between $$\textit{y}$$ = 0.133 and $$\textit{y}$$ = 0.141 displayed a negative lattice mismatch, resulting in tensile strain. Structural defects in these samples were evidenced by HR-XRD and on AFM micrographs. Raman measurements also revealed that lateral strain has a direct impact on the intensities of the LO-like, phonon–plasmon and disorder-activated longitudinal acoustic modes. For all In $$_x$$ Ga $$_{1-x}$$ As $$_y$$ Sb $$_{1-y}$$ films, photoluminescence (PL) spectra showed a bound exciton (BE) transition, with additional features observed in samples under tensile strain, indicating the involvement of native defect centers and donor–acceptor pairs. This study provides new insights into the effect of lateral strain on the crystalline and surface quality, and optical properties of quaternary alloys, relevant for novel optoelectronic applications. - Open Access
- 8 June 2022
- Published by Sociedad Mexicana de Ciencia y Tecnologia de Superficies y Materiales A.C. in Superficies y Vacío
- Vol. 35, 220601
Importance of liquid phase epitaxy on achieving near-lattice-matched growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates
We report the growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates by the liquid phase epitaxy (LPE) technique using the ramp-cooling method. We achieved a near-lattice-matched epitaxial growth with a lattice mismatch of between the quaternary layer and GaSb(100) substrate due to optimal growth parameters. Aberration-corrected scanning transmission electron microscope (AC-STEM) confirmed the high crystalline quality of the quaternary layer and the low lattice mismatch in the heterostructure, without the presence of linear or planar defects. Also, the Secondary Ion Mass Spectrometry (SIMS) technique evidenced a uniform distribution of the atomic elements along the quaternary layer and an abrupt interface between the In0.145Ga0.855As0.132Sb0.868 layer and the GaSb substrate. Plasmon-phonon interactions were observed by Raman spectroscopy indicating that the crystalline quality increases at greater depth in the sample with respect to the surface. The quaternary layer presented a uniform and flat morphology, and luminescence emission attributed to the recombination of bound exciton states at 641 meV. The structural, chemical, and optical properties of the In0.145Ga0.855As0.132Sb0.868 layer demonstrated that it could be auspicious material for infrared range optoelectronic applications. Likewise, the LPE technique successfully shows that it should be used to grow near-lattice-matched heterostructures.
- 8 June 2022
- Published by Sociedad Mexicana de Ciencia y Tecnologia de Superficies y Materiales A.C. in Superficies y Vacío
- Vol. 35, 220601
Open AccessImportance of liquid phase epitaxy on achieving near-lattice-matched growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates
We report the growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates by the liquid phase epitaxy (LPE) technique using the ramp-cooling method. We achieved a near-lattice-matched epitaxial growth with a lattice mismatch of between the quaternary layer and GaSb(100) substrate due to optimal growth parameters. Aberration-corrected scanning transmission electron microscope (AC-STEM) confirmed the high crystalline quality of the quaternary layer and the low lattice mismatch in the heterostructure, without the presence of linear or planar defects. Also, the Secondary Ion Mass Spectrometry (SIMS) technique evidenced a uniform distribution of the atomic elements along the quaternary layer and an abrupt interface between the In0.145Ga0.855As0.132Sb0.868 layer and the GaSb substrate. Plasmon-phonon interactions were observed by Raman spectroscopy indicating that the crystalline quality increases at greater depth in the sample with respect to the surface. The quaternary layer presented a uniform and flat morphology, and luminescence emission attributed to the recombination of bound exciton states at 641 meV. The structural, chemical, and optical properties of the In0.145Ga0.855As0.132Sb0.868 layer demonstrated that it could be auspicious material for infrared range optoelectronic applications. Likewise, the LPE technique successfully shows that it should be used to grow near-lattice-matched heterostructures.