Chong Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Chong Wang has a total of 10 co-authors. Here are the top co-authors by number of shared publications:
- Chao Wang
Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, Jilin Jianzhu University, Changchun 130118, China
2 shared publications - Fan Yang
Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, Jilin Jianzhu University, Changchun 130118, China
2 shared publications - Huan Wang
Key Laboratory for Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China
2 shared publications - Liang Guo
Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China
2 shared publications - Xiaohong Gao
Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun, China
2 shared publications - Xiaotian Yang
Department of Chemistry, Jilin Normal University, Siping 136000, China
2 shared publications
Latest Publications
- 14 October 2022
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 33 (32) , 24785-24793
Analysis of the valence state of tin in ZnSnOx thin-film transistors
- 14 October 2022
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 33 (32) , 24785-24793
Analysis of the valence state of tin in ZnSnOx thin-film transistors
- Open Access
- 13 July 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (14) , 2397
Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors
A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn2+ is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μSAT) up to 12.64 cm2V−1s−1, a threshold voltage (VTH) of −6.61 V, a large on/off current ratio (Ion/Ioff) of 1.87 × 109, and an excellent subthreshold swing (SS) of 0.79 V/Decade.
- 13 July 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (14) , 2397
Open AccessEffect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors
A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn2+ is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μSAT) up to 12.64 cm2V−1s−1, a threshold voltage (VTH) of −6.61 V, a large on/off current ratio (Ion/Ioff) of 1.87 × 109, and an excellent subthreshold swing (SS) of 0.79 V/Decade.