Jabir Hakami
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Jabir Hakami has a total of 62 co-authors. Here are the top co-authors by number of shared publications:
Abeer S. Altowyan
5 shared publications- Nurdogan Can
Jazan University, College of Science, Department of Physical Sciences, Physics Division, P.O. Box 114, Jazan, 45142, Kingdom of Saudi Arabia
5 shared publications - Jingping Xu
Tongji University
4 shared publications - Mustafa Burak Coban
Balikesir University, Faculty of Arts and Sciences, Department of Physics, Balikesir, Turkiye
3 shared publications - Salah Abdulrhmann
Department of Physical Sciences, Physics Division, College of Science, Jazan University, P.O. Box 114, Jazan 45142, Saudi Arabia
3 shared publications Chaofei Liu
Jiangxi University of Science and Technology
2 shared publications
Latest Publications
- 8 September 2026
- Published by American Physical Society (APS) in Physical Review A
- Vol. 114 (3)
Optical asynchronous transmission of light intensity via disruptive inverted-S-shaped bistability in an atom-cavity coupling system
- 8 September 2026
- Published by American Physical Society (APS) in Physical Review A
- Vol. 114 (3)
Optical asynchronous transmission of light intensity via disruptive inverted-S-shaped bistability in an atom-cavity coupling system
- 24 July 2026
- Published by Wiley in Advanced Theory and Simulations
- Vol. 9 (7)
Performance Enhancement of Lead‐free AgBiS 2 –ZnS–ZnSe Dual Shell Quantum Dot Solar Cells Through Transport Layer Engineering and Device Optimization
Lead‐free quantum dot solar cells (QDSCs) have emerged as promising alternatives to conventional photovoltaics owing to their low toxicity and tunable optoelectronic properties. This study presents a comprehensive numerical investigation of AgBiS 2 ‐ZnS‐ZnSe dual‐shell quantum dot solar cell using the SCAPS‐1D simulator. The proposed device architecture comprises ITO/WS 2 /AgBiS 2 ‐ZnS‐ZnSe/CuSCN/back metal, where WS 2 and CuSCN function as the electron and hole transport layers, respectively. Various hole and electron transport materials were systematically evaluated to identify the optimum charge transport configuration. The influences of absorber thickness, acceptor concentration, bulk defect density, transport layer thickness, doping concentration, defect density, and operating temperature on device performance were thoroughly examined. The optimized absorber thickness of 0.4 µm, acceptor concentration of 10 17 cm −3 , and defect density of 10 13 cm −3 provided an excellent balance between light absorption and charge collection. Optimized WS 2 and CuSCN transport layers effectively improved carrier extraction while minimizing interfacial recombination. The optimized device achieved a V oc of 1.07 V, J sc of 32.66 mA cm −2 , FF of 84.93%, and a maximum PCE of 29.95% at 300 K. Moreover, the device retained over 26% efficiency at 400 K, demonstrating excellent thermal stability and strong potential for sustainable, high‐performance lead‐free photovoltaics.
- 24 July 2026
- Published by Wiley in Advanced Theory and Simulations
- Vol. 9 (7)
Performance Enhancement of Lead‐free AgBiS 2 –ZnS–ZnSe Dual Shell Quantum Dot Solar Cells Through Transport Layer Engineering and Device Optimization
Lead‐free quantum dot solar cells (QDSCs) have emerged as promising alternatives to conventional photovoltaics owing to their low toxicity and tunable optoelectronic properties. This study presents a comprehensive numerical investigation of AgBiS 2 ‐ZnS‐ZnSe dual‐shell quantum dot solar cell using the SCAPS‐1D simulator. The proposed device architecture comprises ITO/WS 2 /AgBiS 2 ‐ZnS‐ZnSe/CuSCN/back metal, where WS 2 and CuSCN function as the electron and hole transport layers, respectively. Various hole and electron transport materials were systematically evaluated to identify the optimum charge transport configuration. The influences of absorber thickness, acceptor concentration, bulk defect density, transport layer thickness, doping concentration, defect density, and operating temperature on device performance were thoroughly examined. The optimized absorber thickness of 0.4 µm, acceptor concentration of 10 17 cm −3 , and defect density of 10 13 cm −3 provided an excellent balance between light absorption and charge collection. Optimized WS 2 and CuSCN transport layers effectively improved carrier extraction while minimizing interfacial recombination. The optimized device achieved a V oc of 1.07 V, J sc of 32.66 mA cm −2 , FF of 84.93%, and a maximum PCE of 29.95% at 300 K. Moreover, the device retained over 26% efficiency at 400 K, demonstrating excellent thermal stability and strong potential for sustainable, high‐performance lead‐free photovoltaics.
- Open Access
Exceptional-Point-Enhanced Magnetic Field Sensing in a Cavity-QED System
In this study, we design a new magnetic field measurement model. Specifically, we use a single two-level atom coupled to two cavities to construct a parity–time-symmetric system supporting a third-order exceptional point. If a perturbation is applied to the atomic transition frequency, the eigenvalue of the system will change, and the eigenvalue change is proportional to the cubic root of the perturbation. If the perturbation comes from the magnetic field, a sensitive magnetic field measurement device is formed. By introducing gain and loss via the input–output field, we realize a third-order EP in the non-Hermitian Hamiltonian. Our analysis shows that the system exhibits a nonlinear response to magnetic field perturbations, leading to enhanced spectral sensitivity compared to conventional linear detectors. This equivalent EP based on a cavity-QED sensing scheme breaks the limitation of passive EP sensors and provides a new theoretical idea for the design of sensitive magnetic field measurement devices.
Open AccessExceptional-Point-Enhanced Magnetic Field Sensing in a Cavity-QED System
In this study, we design a new magnetic field measurement model. Specifically, we use a single two-level atom coupled to two cavities to construct a parity–time-symmetric system supporting a third-order exceptional point. If a perturbation is applied to the atomic transition frequency, the eigenvalue of the system will change, and the eigenvalue change is proportional to the cubic root of the perturbation. If the perturbation comes from the magnetic field, a sensitive magnetic field measurement device is formed. By introducing gain and loss via the input–output field, we realize a third-order EP in the non-Hermitian Hamiltonian. Our analysis shows that the system exhibits a nonlinear response to magnetic field perturbations, leading to enhanced spectral sensitivity compared to conventional linear detectors. This equivalent EP based on a cavity-QED sensing scheme breaks the limitation of passive EP sensors and provides a new theoretical idea for the design of sensitive magnetic field measurement devices.
- 18 June 2026
- Published by American Physical Society (APS) in Physical Review A
- Vol. 113 (6)
Nonreciprocal universal photon blockade in an asymmetrical cavity
- 18 June 2026
- Published by American Physical Society (APS) in Physical Review A
- Vol. 113 (6)
Nonreciprocal universal photon blockade in an asymmetrical cavity
- 21 April 2026
- Published by Elsevier in Ceramics International
- Vol. 52 (14) , 26671-26685
Insights into the trap structure of YBa3(BO3)3:Sm3+ from thermoluminescence analysis: A quasi-discrete, host-controlled hierarchy
- 21 April 2026
- Published by Elsevier in Ceramics International
- Vol. 52 (14) , 26671-26685
Insights into the trap structure of YBa3(BO3)3:Sm3+ from thermoluminescence analysis: A quasi-discrete, host-controlled hierarchy
- 26 February 2026
- Published by Elsevier in Ceramics International
- Vol. 52 (11) , 17248-17267
Thermally driven radiative redistribution in Tb3+-activated K2B4O7 borate phosphors for optical thermometry: Effect of alkali co-doping
- 26 February 2026
- Published by Elsevier in Ceramics International
- Vol. 52 (11) , 17248-17267
Thermally driven radiative redistribution in Tb3+-activated K2B4O7 borate phosphors for optical thermometry: Effect of alkali co-doping
- 17 January 2026
- Published by Elsevier in Ceramics International
- Vol. 52 (8) , 10059-10076
Enhanced photoluminescence, thermal stability, and anti-thermal quenching in Li+/Na+ Co-doped K2B4O7:Dy3+ phosphors for solid state lighting
- 17 January 2026
- Published by Elsevier in Ceramics International
- Vol. 52 (8) , 10059-10076
Enhanced photoluminescence, thermal stability, and anti-thermal quenching in Li+/Na+ Co-doped K2B4O7:Dy3+ phosphors for solid state lighting
- 5 December 2025
- Published by American Physical Society (APS) in Physical Review A
- Vol. 112 (6)
Probing the non-Hermitian skin effect via the cavity transmission spectrum
- 5 December 2025
- Published by American Physical Society (APS) in Physical Review A
- Vol. 112 (6)
Probing the non-Hermitian skin effect via the cavity transmission spectrum
- Open Access
- 18 February 2025
- Published by MDPI AG in Engineering Proceedings
- Vol. 87 (1) , 5
Influence of Optical Feedback Strength on Intensity Noise and Photon Number Probability Distribution of InGaAsP/InP Laser
We have systematically investigated how the strength of optical feedback (OFB) affects the dynamics, noise levels, and photon number probability density distribution (PNPDD) in time-delayed semiconductor lasers (SLs). We find that intensity noise decreases in both weak and strong OFB regimes. The shape of the PNPDDs changes based on OFB strength: it shifts from symmetric to asymmetric based on the OFB strength. In the chaotic region, the PNPDDs display a peak at low intensity and taper off at multiples of the average photon number. The results of this work suggest that operating SLs under weak or strong OFB conditions may help to minimize instability.
- 18 February 2025
- Published by MDPI AG in Engineering Proceedings
- Vol. 87 (1) , 5
Open AccessInfluence of Optical Feedback Strength on Intensity Noise and Photon Number Probability Distribution of InGaAsP/InP Laser
We have systematically investigated how the strength of optical feedback (OFB) affects the dynamics, noise levels, and photon number probability density distribution (PNPDD) in time-delayed semiconductor lasers (SLs). We find that intensity noise decreases in both weak and strong OFB regimes. The shape of the PNPDDs changes based on OFB strength: it shifts from symmetric to asymmetric based on the OFB strength. In the chaotic region, the PNPDDs display a peak at low intensity and taper off at multiples of the average photon number. The results of this work suggest that operating SLs under weak or strong OFB conditions may help to minimize instability.
- 13 November 2024
- Published by American Physical Society (APS) in Physical Review A
- Vol. 110 (5)
Nanowire-mediated photon entanglement between orthogonal quantum-dot exciton states
- 13 November 2024
- Published by American Physical Society (APS) in Physical Review A
- Vol. 110 (5)
Nanowire-mediated photon entanglement between orthogonal quantum-dot exciton states