Satyajeet S. Patil

In this study, cobalt phosphate is synthesized using a hydrothermal approach on a stainless steel substrate.

Ferrite materials offer promising advantages for non-volatile memory and energy-efficient neuromorphic computing, owing to their multifunctional properties and potential for advanced data storage and processing.

In this work, cobalt phosphate hydrate (Co₃(PO[ ]8H₂O) was deposited on Ni-foam using the facile hydrothermal method with varied reaction temperatures as 120°C, 150°C and 180°C. The X-ray diffraction analysis reveals the C2/m space group of cobalt phosphate hydrate (CoPH) with a monoclinic crystal structure. Scanning electron microscopy (SEM) evaluates the effect of different reaction temperatures on the morphology of deposited thin film. The change in morphology from microflakes to three-dimensional (3D) microflowers is observed due to temperature variation. In the electrochemical study, the C2 (150°C) electrode delivers a specific capacitance of 8798[ ]mF/cm² (specific capacity 1.466[ ]mAh cm^–2) at 30[ ]mA cm[ ] current density. Here, 70.65% of coulombic efficiency was observed over 1500 cycles. The energy density of 0.439[ ]Wh/cm² and power density of 9[ ]mW/cm² were delivered by optimized CoP electrodes, respectively. EIS study reveals the Rs values of C1, C2 and C3 electrodes are 1.49, 0.97 and 1.3 [ ], respectively.

Cation incorporation emerges as a promising approach for improving the performance of the kesterite Cu₂ZnSn(S,Se)₄ (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (2S₃ is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process. The successful doping of In improved crystal growth and promoted the formation of larger grains. Furthermore, the CZTSSe TFSCs fabricated with In doping exhibited improved device performance. In particular, the In-CZTSSe-2-based device showed an improved power conversion efficiency (PCE) of 9.53%, open-circuit voltage (V_oc) of 486 mV, and fill factor (FF) of 61% compared to the undoped device. Moreover, the small amount of In incorporated into the CZTSSe absorber demonstrated reduced nonradiative recombination, improved carrier separation, and enhanced carrier transport properties. This study suggests a simple and effective way to incorporate In to achieve high efficiency and low V_oc loss.