Hanbin Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Hanbin Wang has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
Chao Ai
Huawei Technologies Group Co. Ltd, Shenzhen, Guangdong 518129, People’s Republic of China
1 shared publicationFazhan Zhao
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
1 shared publicationHainan Liu
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
1 shared publicationHuajun Cao
Huawei Technologies Group Co. Ltd, Shenzhen, Guangdong 518129, People’s Republic of China
1 shared publication- Jianhui Bu
Institute of Microelectronics of the Chinese Academy of Science
1 shared publication - Jinshun Bi
The School of Integrated Circuits, Guizhou Normal University 2 , Guiyang, 550025
1 shared publication
Latest Publications
- 19 August 2022
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 37 (10) , 105004
Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range
The performance of the ultra-thin body and buried oxide fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistors based on a 22 nm technology node is investigated in this paper over an ultra-wide temperature range from 6 K to 550 K. The current–voltage (I–V) characteristics under wide temperature range conditions are shown, including the influence of the back-gate bias (V bg). The important electrical parameters, such as threshold voltage (V t), subthreshold swing, ON-state current (I on), and OFF-state current (I off), are extracted with temperature changes. From 550 K to 6 K, V t increased by 0.21 V, I off decreased nearly six orders of magnitude, and the gate-induced drain leakage current decreased by nearly eight orders of magnitude. The main physical mechanisms for the changing electrical performance with temperature are the variation of carrier concentration, mobility, and energy band. By utilizing a technology computer-aided design simulation, the temperature dependence of the device performance is discussed and analyzed.
- 19 August 2022
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 37 (10) , 105004
Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range
The performance of the ultra-thin body and buried oxide fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistors based on a 22 nm technology node is investigated in this paper over an ultra-wide temperature range from 6 K to 550 K. The current–voltage (I–V) characteristics under wide temperature range conditions are shown, including the influence of the back-gate bias (V bg). The important electrical parameters, such as threshold voltage (V t), subthreshold swing, ON-state current (I on), and OFF-state current (I off), are extracted with temperature changes. From 550 K to 6 K, V t increased by 0.21 V, I off decreased nearly six orders of magnitude, and the gate-induced drain leakage current decreased by nearly eight orders of magnitude. The main physical mechanisms for the changing electrical performance with temperature are the variation of carrier concentration, mobility, and energy band. By utilizing a technology computer-aided design simulation, the temperature dependence of the device performance is discussed and analyzed.