Nelson M. Mbithi
Nelson M. Mbithi
*This is an algorithmically generated author record based on publicly available information.
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Nelson M. Mbithi has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
- Gábor Almási
Institute of Physics, University of Pécs, Ifjúság ú. 6, 7624 Pécs, Hungary
1 shared publication - János Hebling
Institute of Physics University of Pécs 7624 Pécs Hungary
1 shared publication - József András Fülöp
ELI ALPS Research Institute Szeged Hungary
1 shared publication - Zoltán Tibai
Univ Pecs, Inst Phys, H-7624 Pecs, Hungary
1 shared publication
Latest Publications
- Open Access
Design of Semiconductor Contact Grating Terahertz Source with Enhanced Diffraction Efficiency
We report a semiconductor contact grating terahertz source design based on a rectangular profile for phase-matched terahertz generation in the long infrared pump wavelength range. The calculations show that the best diffraction efficiency can be achieved by a filling factor significantly smaller than 50%. Furthermore, the possibility of diffraction efficiency enhancement was investigated by applying three different antireflective coating structures. Numerical simulations have indicated that at 2.06 m and 3.0 μm pump wavelength, diffraction efficiencies greater than 91% and 89% can be achieved by adding an appropriate antireflective coating to the GaP and GaAs contact grating structure, respectively. In addition, numerical simulations were performed to investigate the influence of wall angles on diffraction efficiency. The results reveal that the wall angle does not significantly affect the diffraction efficiency: while keeping the wall angle deviation from the vertical below 25 degrees, the efficiency drop remains below 5% for otherwise optimal grating parameters.Open AccessDesign of Semiconductor Contact Grating Terahertz Source with Enhanced Diffraction Efficiency
We report a semiconductor contact grating terahertz source design based on a rectangular profile for phase-matched terahertz generation in the long infrared pump wavelength range. The calculations show that the best diffraction efficiency can be achieved by a filling factor significantly smaller than 50%. Furthermore, the possibility of diffraction efficiency enhancement was investigated by applying three different antireflective coating structures. Numerical simulations have indicated that at 2.06 m and 3.0 μm pump wavelength, diffraction efficiencies greater than 91% and 89% can be achieved by adding an appropriate antireflective coating to the GaP and GaAs contact grating structure, respectively. In addition, numerical simulations were performed to investigate the influence of wall angles on diffraction efficiency. The results reveal that the wall angle does not significantly affect the diffraction efficiency: while keeping the wall angle deviation from the vertical below 25 degrees, the efficiency drop remains below 5% for otherwise optimal grating parameters.