Miłosz Rybak
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Miłosz Rybak has a total of 72 co-authors. Here are the top co-authors by number of shared publications:
- Magdalena Birowska
Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Pasteura St. 5, 02-093 Warsaw, Poland
4 shared publications - Robert Kudrawiec
Wrocl̷aw University of Science and Technology Wybrzeże Wyspiańskiego 27
4 shared publications - Filip Dybała
Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
3 shared publications Magdalena Birowska
3 shared publications- Paweł Scharoch
Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
3 shared publications - Tomasz Woźniak
Institute of Theoretical Physics, Wrocław University of Science and Technology, Wrocław, Poland
3 shared publications
Latest Publications
- Open Access
- 1 October 2026
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 130 (41) , 14220-14229
The Interplay of Phonons and Subgap States Governs Ultrafast Carrier Dynamics in Layered HgPSe3
Two-dimensional van der Waals materials display rich nonequilibrium physics due to their reduced dimensionality and strong light–matter interactions. Layered metal phosphorus trichalcogenides (MPX3) feature bandgaps spanning the visible to ultraviolet range and exhibit a complex interplay between excitons, phonons, and defects. Here we use static and time-resolved photoluminescence and femtosecond broadband transient reflectivity to investigate the temperature-dependent ultrafast carrier dynamics in layered HgPSe3, a semiconductor with a quasi-direct bandgap near 2 eV. We identify distinct sub-bandgap photoluminescence features that become prominent at low temperature. Their temperature and fluence dependence strongly indicate radiative recombination involving localized states. The transient reflectivity map displays three features associated with interband optical transitions in the visible range, as corroborated by density functional theory band structure calculations. These features exhibit fluence-dependent decay dynamics, indicating a competition between carrier localization into sub-bandgap states, state-filling effects that limit the available electronic phase space for hot-carrier relaxation, and phonon-bottleneck-limited carrier cooling. Our results provide new insights into the ultrafast carrier dynamics of HgPSe3 and establish a framework for understanding the role of sub-bandgap states in MPX3 semiconductors, with potential implications for broadband optoelectronic and photodetection applications.
- 1 October 2026
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 130 (41) , 14220-14229
Open AccessThe Interplay of Phonons and Subgap States Governs Ultrafast Carrier Dynamics in Layered HgPSe3
Two-dimensional van der Waals materials display rich nonequilibrium physics due to their reduced dimensionality and strong light–matter interactions. Layered metal phosphorus trichalcogenides (MPX3) feature bandgaps spanning the visible to ultraviolet range and exhibit a complex interplay between excitons, phonons, and defects. Here we use static and time-resolved photoluminescence and femtosecond broadband transient reflectivity to investigate the temperature-dependent ultrafast carrier dynamics in layered HgPSe3, a semiconductor with a quasi-direct bandgap near 2 eV. We identify distinct sub-bandgap photoluminescence features that become prominent at low temperature. Their temperature and fluence dependence strongly indicate radiative recombination involving localized states. The transient reflectivity map displays three features associated with interband optical transitions in the visible range, as corroborated by density functional theory band structure calculations. These features exhibit fluence-dependent decay dynamics, indicating a competition between carrier localization into sub-bandgap states, state-filling effects that limit the available electronic phase space for hot-carrier relaxation, and phonon-bottleneck-limited carrier cooling. Our results provide new insights into the ultrafast carrier dynamics of HgPSe3 and establish a framework for understanding the role of sub-bandgap states in MPX3 semiconductors, with potential implications for broadband optoelectronic and photodetection applications.
- Open Access
- 16 April 2026
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 130 (17) , 6295-6303
Symmetry-Breaking Phenomena in MnPS 3 /TMDC Heterostructures: Nonrelativistic Spin Splitting, Altermagnetism and Spin-Valley Effects
- 16 April 2026
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 130 (17) , 6295-6303
Open AccessSymmetry-Breaking Phenomena in MnPS 3 /TMDC Heterostructures: Nonrelativistic Spin Splitting, Altermagnetism and Spin-Valley Effects
- Open Access
- 16 March 2026
- Published by Royal Society of Chemistry (RSC) in Nanoscale
Pressure-induced phase transition on layered HgPSe 3 revealed by optical, structural and vibrational studies
High-pressure spectroscopic and diffraction studies on HgPSe 3 uncover a phase transition at ≈3.6 GPa from a monoclinic to a triclinic phase, accompanied by a quasi-direct-to-indirect bandgap crossover.
- 16 March 2026
- Published by Royal Society of Chemistry (RSC) in Nanoscale
Open AccessPressure-induced phase transition on layered HgPSe 3 revealed by optical, structural and vibrational studies
High-pressure spectroscopic and diffraction studies on HgPSe 3 uncover a phase transition at ≈3.6 GPa from a monoclinic to a triclinic phase, accompanied by a quasi-direct-to-indirect bandgap crossover.
- Open Access
Symmetry-Breaking Phenomena in MnPS3/TMDC Heterostructures: Non-relativistic Spin Splitting, Altermagnetism and Spin-Valley Effects
We explore symmetry-breaking phenomena in MnPS3/TMDC (MoS2, WS2, MoSe2, WSe2) heterostructures using first-principles calculations, considering two high-symmetry stacking configurations, S1 and S2, which differ not only by their interfacial registry but also by a 30° twist between the layers. Depending on the stacking geometry, the systems exhibit two distinct types of nonrelativistic spin splitting (NRSS): S2 hosts altermagnetic-like band crossings, while S1 shows global spin splitting characteristic of symmetry-breaking NRSS. Magnetic exchange and anisotropy parameters indicate that the intrinsic magnetic properties of MnPS3 are largely preserved upon interfacing. Including spin-orbit coupling, we find tunable conduction-valley splitting controlled by the MnPS3 spin orientation. Our results identify MnPS3 as a symmetry-tunable antiferromagnetic substrate capable of inducing and controlling spin and valley effects in 2D heterostructures without relying on net magnetization or strong SOC, offering a route toward nonvolatile valleytronic functionalities.
Open AccessSymmetry-Breaking Phenomena in MnPS3/TMDC Heterostructures: Non-relativistic Spin Splitting, Altermagnetism and Spin-Valley Effects
We explore symmetry-breaking phenomena in MnPS3/TMDC (MoS2, WS2, MoSe2, WSe2) heterostructures using first-principles calculations, considering two high-symmetry stacking configurations, S1 and S2, which differ not only by their interfacial registry but also by a 30° twist between the layers. Depending on the stacking geometry, the systems exhibit two distinct types of nonrelativistic spin splitting (NRSS): S2 hosts altermagnetic-like band crossings, while S1 shows global spin splitting characteristic of symmetry-breaking NRSS. Magnetic exchange and anisotropy parameters indicate that the intrinsic magnetic properties of MnPS3 are largely preserved upon interfacing. Including spin-orbit coupling, we find tunable conduction-valley splitting controlled by the MnPS3 spin orientation. Our results identify MnPS3 as a symmetry-tunable antiferromagnetic substrate capable of inducing and controlling spin and valley effects in 2D heterostructures without relying on net magnetization or strong SOC, offering a route toward nonvolatile valleytronic functionalities.
- Open Access
- 1 July 2025
- Published by Springer Nature in npj 2D Materials and Applications
- Vol. 9 (1) , 1-9
Experimental and theoretical band alignment study of MPS3 (M = Mn, Fe, Co, Ni) for designing tailored 2D heterostructures
Van der Waals crystals offer opportunities to engineer material properties by stacking diverse 2D layers into heterostructures. Charge redistribution at these interfaces, governed by band alignment and Fermi levels, enables control over optical, electronic, and magnetic behavior. In this study, we investigated the band alignment and excitation spectra of exfoliated MPS3 (M = Mn, Fe, Co, Ni) using X-ray and UV photoelectron spectroscopy, optical absorption, and DFT + U calculations. Ionization potentials from 5.4 eV (FePS3) to 6.2 eV (NiPS3) were determined. The resulting band diagrams differentiate localized d states from hybridized p-d states, offering insights for designing functional heterostructures. Selective occupation of unoccupied 3d states provides a pathway to tune magnetic order. Theoretical results show that MnPS3 is well-aligned for both hydrogen and oxygen evolution reactions (HER and OER), while other MPS3 are promising for OER. MnPS3/NiPS3 heterostructure exhibits optimal band alignment for efficient water splitting across a broad pH range.
- 1 July 2025
- Published by Springer Nature in npj 2D Materials and Applications
- Vol. 9 (1) , 1-9
Open AccessExperimental and theoretical band alignment study of MPS3 (M = Mn, Fe, Co, Ni) for designing tailored 2D heterostructures
Van der Waals crystals offer opportunities to engineer material properties by stacking diverse 2D layers into heterostructures. Charge redistribution at these interfaces, governed by band alignment and Fermi levels, enables control over optical, electronic, and magnetic behavior. In this study, we investigated the band alignment and excitation spectra of exfoliated MPS3 (M = Mn, Fe, Co, Ni) using X-ray and UV photoelectron spectroscopy, optical absorption, and DFT + U calculations. Ionization potentials from 5.4 eV (FePS3) to 6.2 eV (NiPS3) were determined. The resulting band diagrams differentiate localized d states from hybridized p-d states, offering insights for designing functional heterostructures. Selective occupation of unoccupied 3d states provides a pathway to tune magnetic order. Theoretical results show that MnPS3 is well-aligned for both hydrogen and oxygen evolution reactions (HER and OER), while other MPS3 are promising for OER. MnPS3/NiPS3 heterostructure exhibits optimal band alignment for efficient water splitting across a broad pH range.
- 31 December 2024
- Published by Wiley in Advanced Optical Materials
- Vol. 13 (10)
Direct Optical Probing of the Magnetic Properties of the Layered Antiferromagnet CrPS 4
The unusual magnetic properties of van der Waals‐type antiferromagnetic semiconductors such as transition metal thiophosphates make them highly attractive for spintronics and optoelectronics. However, a link between the magnetic and optical properties of these materials, required for practical applications, has not yet been established. A combined experimental and theoretical study of magnetic, optical, and structural properties of CrPS 4 samples is reported. It is found that the magnetic‐field‐dependent circular polarization degree of the photoluminescence is a direct measure of the net magnetization of CrPS 4 . Complementary Raman scattering measured as a function of magnetic field and temperature enables the determination of the magnetic susceptibility curve of the material. Experimental results are supported by density functional theory calculations that take as input the lattice parameters determined from temperature‐dependent X‐ray diffraction measurements. This allows the impact of spin ordering on the spectral position of Raman transitions in CrPS 4 to be explained, as well as the anomalous temperature shifts of some of them. The presented method for all‐optical determination of magnetic properties is highly promising for studies of spin ordering and magnetic phase transitions in single‐ or few‐layer samples of magnetic layered materials, for which a poor signal‐to‐noise ratio precludes reliable neutron scattering or magnetometry measurements.
- 31 December 2024
- Published by Wiley in Advanced Optical Materials
- Vol. 13 (10)
Direct Optical Probing of the Magnetic Properties of the Layered Antiferromagnet CrPS 4
The unusual magnetic properties of van der Waals‐type antiferromagnetic semiconductors such as transition metal thiophosphates make them highly attractive for spintronics and optoelectronics. However, a link between the magnetic and optical properties of these materials, required for practical applications, has not yet been established. A combined experimental and theoretical study of magnetic, optical, and structural properties of CrPS 4 samples is reported. It is found that the magnetic‐field‐dependent circular polarization degree of the photoluminescence is a direct measure of the net magnetization of CrPS 4 . Complementary Raman scattering measured as a function of magnetic field and temperature enables the determination of the magnetic susceptibility curve of the material. Experimental results are supported by density functional theory calculations that take as input the lattice parameters determined from temperature‐dependent X‐ray diffraction measurements. This allows the impact of spin ordering on the spectral position of Raman transitions in CrPS 4 to be explained, as well as the anomalous temperature shifts of some of them. The presented method for all‐optical determination of magnetic properties is highly promising for studies of spin ordering and magnetic phase transitions in single‐ or few‐layer samples of magnetic layered materials, for which a poor signal‐to‐noise ratio precludes reliable neutron scattering or magnetometry measurements.
- 1 November 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (20)
Effect of hydrostatic pressure and temperature on the electronic band structure- 1 November 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (20)
Effect of hydrostatic pressure and temperature on the electronic band structure- Open Access
- 22 February 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 109 (5) , 054426
Magneto-optical anisotropies of two-dimensional antiferromagnetic from first principlesHere we systematically investigate the impact of the spin direction on the electronic and optical properties of transition metal phosphorus trichalcogenides (, Ni, Fe; , Se) exhibiting various antiferromagnetic arrangements within the 2D limit. Our analysis based on the density functional theory and versatile formalism of Bethe-Salpeter equation reveals larger exciton binding energies for (up to 1.1 eV in air) than (up to 0.8 eV in air), exceeding the values of transition metal dichalcogenides (TMDs). For the (Mn,, we determine the optically active band-edge transitions, revealing that they are sensitive to in-plane magnetic order, irrespective of the type of chalcogen atom. We predict the anistropic effective masses and the type of linear polarization as important fingerprints for sensing the type of magnetic AFM arrangements. Furthermore, we identify the spin-orientation-dependent features such as the valley splitting, the effective mass of holes, and the exciton binding energy. In particular, we demonstrate that for (, Se), a pair of nonequivalent and points exists yielding the valley splittings that strongly depend on the direction of AFM aligned spins. Notably, for the out-of-plane direction of spins, two distinct peaks are expected to be visible below the absorption onset, whereas one peak should emerge for the in-plane configuration of spins. These spin-dependent features provide an insight into spin flop transitions of 2D materials. Finally, we propose a strategy for how the spin valley polarization can be realized in 2D AFM within a honeycomb lattice.- 22 February 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 109 (5) , 054426
Open AccessMagneto-optical anisotropies of two-dimensional antiferromagnetic from first principlesHere we systematically investigate the impact of the spin direction on the electronic and optical properties of transition metal phosphorus trichalcogenides (, Ni, Fe; , Se) exhibiting various antiferromagnetic arrangements within the 2D limit. Our analysis based on the density functional theory and versatile formalism of Bethe-Salpeter equation reveals larger exciton binding energies for (up to 1.1 eV in air) than (up to 0.8 eV in air), exceeding the values of transition metal dichalcogenides (TMDs). For the (Mn,, we determine the optically active band-edge transitions, revealing that they are sensitive to in-plane magnetic order, irrespective of the type of chalcogen atom. We predict the anistropic effective masses and the type of linear polarization as important fingerprints for sensing the type of magnetic AFM arrangements. Furthermore, we identify the spin-orientation-dependent features such as the valley splitting, the effective mass of holes, and the exciton binding energy. In particular, we demonstrate that for (, Se), a pair of nonequivalent and points exists yielding the valley splittings that strongly depend on the direction of AFM aligned spins. Notably, for the out-of-plane direction of spins, two distinct peaks are expected to be visible below the absorption onset, whereas one peak should emerge for the in-plane configuration of spins. These spin-dependent features provide an insight into spin flop transitions of 2D materials. Finally, we propose a strategy for how the spin valley polarization can be realized in 2D AFM within a honeycomb lattice. - Open Access
Anisotropic Magnetodielectric Coupling in Layered Antiferromagnetic FePS$_3$
We report anisotropic magnetodielectric (MD) coupling in layered van der Waals (vdW) antiferromagnetic (AFM) FePS$_3$ (N\'eel temperature $T_{\mathrm{N}}$ $\sim$ 120K) with perpendicular anisotropy. Above $T_N$, while dielectric response function along \textit{c}-axis shows frequency dependent relaxations, in-plane data is frequency independent and reveals a deviation from phonon-anharmonicity in the ordered state, thereby implying a connection to spin-phonon coupling known to be indicative of onset of magnetic ordering. At low temperature (below 40 K), atypical anomaly in the dielectric constant is corroborated with temperature dependent DC and AC susceptibility. The magnetodielectric response across this anomaly differs significantly for both, in-plane and out-of-plane cases. We have explained this in terms of preferential orientation of magnetic AFM-z alignment, implied by the in-plane structural anisotropy as confirmed by \textit{ab-initio} calculations. Controlling relative strength of magnetodielectric coupling with magnetic anisotropy opens up a strategy for tracking subtle modifications of structure, such as in-plane anisotropy, with potential application to spintronic technologies.Open AccessAnisotropic Magnetodielectric Coupling in Layered Antiferromagnetic FePS$_3$
We report anisotropic magnetodielectric (MD) coupling in layered van der Waals (vdW) antiferromagnetic (AFM) FePS$_3$ (N\'eel temperature $T_{\mathrm{N}}$ $\sim$ 120K) with perpendicular anisotropy. Above $T_N$, while dielectric response function along \textit{c}-axis shows frequency dependent relaxations, in-plane data is frequency independent and reveals a deviation from phonon-anharmonicity in the ordered state, thereby implying a connection to spin-phonon coupling known to be indicative of onset of magnetic ordering. At low temperature (below 40 K), atypical anomaly in the dielectric constant is corroborated with temperature dependent DC and AC susceptibility. The magnetodielectric response across this anomaly differs significantly for both, in-plane and out-of-plane cases. We have explained this in terms of preferential orientation of magnetic AFM-z alignment, implied by the in-plane structural anisotropy as confirmed by \textit{ab-initio} calculations. Controlling relative strength of magnetodielectric coupling with magnetic anisotropy opens up a strategy for tracking subtle modifications of structure, such as in-plane anisotropy, with potential application to spintronic technologies. - Open Access
- 30 September 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (19) , 3433
Stress-Tuned Optical Transitions in Layered 1T-MX2 (M=Hf, Zr, Sn; X=S, Se) Crystals
Optical measurements under externally applied stresses allow us to study the materials’ electronic structure by comparing the pressure evolution of optical peaks obtained from experiments and theoretical calculations. We examine the stress-induced changes in electronic structure for the thermodynamically stable 1T polytype of selected MX compounds (M=Hf, Zr, Sn; X=S, Se), using the density functional theory. We demonstrate that considered 1T-MX materials are semiconducting with indirect character of the band gap, irrespective to the employed pressure as predicted using modified Becke–Johnson potential. We determine energies of direct interband transitions between bands extrema and in band-nesting regions close to Fermi level. Generally, the studied transitions are optically active, exhibiting in-plane polarization of light. Finally, we quantify their energy trends under external hydrostatic, uniaxial, and biaxial stresses by determining the linear pressure coefficients. Generally, negative pressure coefficients are obtained implying the narrowing of the band gap. The semiconducting-to-metal transition are predicted under hydrostatic pressure. We discuss these trends in terms of orbital composition of involved electronic bands. In addition, we demonstrate that the measured pressure coefficients of HfS and HfSe absorption edges are in perfect agreement with our predictions. Comprehensive and easy-to-interpret tables containing the optical features are provided to form the basis for assignation of optical peaks in future measurements.- 30 September 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (19) , 3433
Open AccessStress-Tuned Optical Transitions in Layered 1T-MX2 (M=Hf, Zr, Sn; X=S, Se) Crystals
Optical measurements under externally applied stresses allow us to study the materials’ electronic structure by comparing the pressure evolution of optical peaks obtained from experiments and theoretical calculations. We examine the stress-induced changes in electronic structure for the thermodynamically stable 1T polytype of selected MX compounds (M=Hf, Zr, Sn; X=S, Se), using the density functional theory. We demonstrate that considered 1T-MX materials are semiconducting with indirect character of the band gap, irrespective to the employed pressure as predicted using modified Becke–Johnson potential. We determine energies of direct interband transitions between bands extrema and in band-nesting regions close to Fermi level. Generally, the studied transitions are optically active, exhibiting in-plane polarization of light. Finally, we quantify their energy trends under external hydrostatic, uniaxial, and biaxial stresses by determining the linear pressure coefficients. Generally, negative pressure coefficients are obtained implying the narrowing of the band gap. The semiconducting-to-metal transition are predicted under hydrostatic pressure. We discuss these trends in terms of orbital composition of involved electronic bands. In addition, we demonstrate that the measured pressure coefficients of HfS and HfSe absorption edges are in perfect agreement with our predictions. Comprehensive and easy-to-interpret tables containing the optical features are provided to form the basis for assignation of optical peaks in future measurements.