Horacio Soto
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Horacio Soto has a total of 22 co-authors. Here are the top co-authors by number of shared publications:
- D. Erasme
Département Communications, École Nationale Supérieure des Télécommunications, CNRS URA 820, 46 rue Barrault, 75634 Paris cedex 13, France
3 shared publications C.A. Dı́az
Centro de Investigacion Cientifica y de Education Superior de Ensenada, División de Fisica Aplicada, km 107, carretara Tijuana Ensenada, Apartado Postal 2732, Ensenada 22860, Baja California, Mexico
2 shared publicationsE. Álvarez
Centro de Investigacion Cientifica y de Education Superior de Ensenada, División de Fisica Aplicada, km 107, carretara Tijuana Ensenada, Apartado Postal 2732, Ensenada 22860, Baja California, Mexico
2 shared publications- G. Guekos
Institute of Quantum Electronics, Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
2 shared publications Gerson Torres-Miranda
Applied Physics Division, Center for Scientific Research and Higher Education of Ensenada, Ensenada 22860, Mexico
2 shared publicationsJ. Topomondzo
Département Communications, École Nationale Supérieure des Télécommunications, CNRS URA 820, 46 rue Barrault, 75634 Paris cedex 13, France
2 shared publications
Latest Publications
- 15 December 2025
- Published by Optica Publishing Group in Optics Express
- Vol. 33 (26) , 53657-53674
Wavelength conversion using a [111]A MQW-SOA with escape time reduced by compressive strain-induced piezoelectric fields
Here, a technique for implementing an all-optical wavelength converter based on the quantum-confined Stark effect (QCSE) influenced by piezoelectric fields in a semiconductor optical amplifier with compressively strained zinc-blende multi-quantum well grown along the [111]A direction and embedded in the intrinsic layer of a p-i-n diode is presented. The originality and crucial aspect of the technique used is that the piezoelectric fields, induced by the compressive strain within the quantum wells (QWs) of the amplifier with an orientation parallel to that of the built-in field of the structure, make it possible to accelerate the absorption recovery and to perform a fast wavelength conversion over a wide range of the continuum. Specifically, the built-in p-i-n electric field and the piezoelectric fields induce a QCSE and unevenly tilt the potential energy profile of the QWs. This dramatically reduces the energy between the effective height of barriers and the quantized energy of carriers, remarkably due to the piezoelectric fields, thereby decreasing the escape time of carriers from wells and accelerating absorption recovery. Consequently, a strong negative chirp is induced into the converted signal pulses, allowing their compression after passing through a blue-shifted optical filter. Up- and down-conversions at 150 and 1300 Gb/s, respectively, were theoretically predicted in an ideal case, and experimentally, both were error-free demonstrated at 40 Gb/s in a total range of 29 nm, employing a straightforward scheme, with the possibility of operating at 100 Gb/s.
- 15 December 2025
- Published by Optica Publishing Group in Optics Express
- Vol. 33 (26) , 53657-53674
Wavelength conversion using a [111]A MQW-SOA with escape time reduced by compressive strain-induced piezoelectric fields
Here, a technique for implementing an all-optical wavelength converter based on the quantum-confined Stark effect (QCSE) influenced by piezoelectric fields in a semiconductor optical amplifier with compressively strained zinc-blende multi-quantum well grown along the [111]A direction and embedded in the intrinsic layer of a p-i-n diode is presented. The originality and crucial aspect of the technique used is that the piezoelectric fields, induced by the compressive strain within the quantum wells (QWs) of the amplifier with an orientation parallel to that of the built-in field of the structure, make it possible to accelerate the absorption recovery and to perform a fast wavelength conversion over a wide range of the continuum. Specifically, the built-in p-i-n electric field and the piezoelectric fields induce a QCSE and unevenly tilt the potential energy profile of the QWs. This dramatically reduces the energy between the effective height of barriers and the quantized energy of carriers, remarkably due to the piezoelectric fields, thereby decreasing the escape time of carriers from wells and accelerating absorption recovery. Consequently, a strong negative chirp is induced into the converted signal pulses, allowing their compression after passing through a blue-shifted optical filter. Up- and down-conversions at 150 and 1300 Gb/s, respectively, were theoretically predicted in an ideal case, and experimentally, both were error-free demonstrated at 40 Gb/s in a total range of 29 nm, employing a straightforward scheme, with the possibility of operating at 100 Gb/s.
- 1 January 2023
- Published by Shanghai Institute of Optics and Fine Mechanics in Chinese Optics Letters
- Vol. 21 (9) , 092501
Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs
Here, we present a study of the effective piezoelectric constant (e14e) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within a semiconductor optical amplifier (SOA). We determined e14e using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes. An e14e C · m-2 at 23°C was obtained for an SOA with 1.2 nm [111]-oriented strained In0.687Ga0.313As/In0.807Ga0.193As0.304P0.696 QWs. Unlike previously published research, where e14e magnitude increased as temperature rised, we extracted an e14e magnitude that decreased as temperature increased.- 1 January 2023
- Published by Shanghai Institute of Optics and Fine Mechanics in Chinese Optics Letters
- Vol. 21 (9) , 092501
Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs
Here, we present a study of the effective piezoelectric constant (e14e) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within a semiconductor optical amplifier (SOA). We determined e14e using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes. An e14e C · m-2 at 23°C was obtained for an SOA with 1.2 nm [111]-oriented strained In0.687Ga0.313As/In0.807Ga0.193As0.304P0.696 QWs. Unlike previously published research, where e14e magnitude increased as temperature rised, we extracted an e14e magnitude that decreased as temperature increased.- 25 October 2022
- Published by Elsevier in Optics Communications
- Vol. 529
Study of the quantum-confined Stark effect in an unbiased [111]-oriented multi-quantum well semiconductor optical amplifier
- 25 October 2022
- Published by Elsevier in Optics Communications
- Vol. 529
Study of the quantum-confined Stark effect in an unbiased [111]-oriented multi-quantum well semiconductor optical amplifier
- Open Access
- 1 October 2022
- Published by AIP Publishing in AIP Advances
- Vol. 12 (10) , 105005
Direct determination of the piezoelectric field using the quantum-confined Stark effect in a strained [111]-oriented zinc-blende MQW-SOA
Here, we present a method, based on Stark shifts induced by the quantum-confined Stark effect, to directly determine the piezoelectric field in strained zinc-blende quantum wells (QWs) grown along the 111 direction and embedded in the p–i–n diode structure (p-iMQW-n) of a semiconductor optical amplifier. Under short-circuit and open-circuit conditions and resonant optical excitation, we experimentally determine the energy of the 1s e-hh excitonic resonance and the potential difference across the p-iMQW-n junction. Using these parameters in an analytical expression derived in this work, we directly determined a piezoelectric field of −108.71 ± 8.51 kV/cm acting on each of the eight 12-Å-wide strained [111]-oriented In0.687Ga0.313As /In0.807Ga0.193As0.304P0.696 QWs of a semiconductor optical amplifier (SOA). The theoretical prediction of −112.24 kV/cm was in very good agreement, within the experimental error, with the value of the piezoelectric field extracted through the proposed procedure, which was also indirectly validated by comparing the experimental value of the 1s e-hh excitonic resonance Stark shift with the extracted one. Even though the implemented technique was specially designed to experimentally determine the piezoelectric field acting on each of the QWs of a multiple quantum well SOA, it can be applied to any p–i–n structure with electrodes and strained [111]-oriented zinc-blende QWs embedded in its intrinsic region. Remarkably, the method proposed here allows direct experimental determination of the piezoelectric field through an analytical expression, with which it is also possible to estimate, with high reliability, the precision of the result and how it is affected by the accuracy of each measuring instrument intervening in the procedure.
- 1 October 2022
- Published by AIP Publishing in AIP Advances
- Vol. 12 (10) , 105005
Open AccessDirect determination of the piezoelectric field using the quantum-confined Stark effect in a strained [111]-oriented zinc-blende MQW-SOA
Here, we present a method, based on Stark shifts induced by the quantum-confined Stark effect, to directly determine the piezoelectric field in strained zinc-blende quantum wells (QWs) grown along the 111 direction and embedded in the p–i–n diode structure (p-iMQW-n) of a semiconductor optical amplifier. Under short-circuit and open-circuit conditions and resonant optical excitation, we experimentally determine the energy of the 1s e-hh excitonic resonance and the potential difference across the p-iMQW-n junction. Using these parameters in an analytical expression derived in this work, we directly determined a piezoelectric field of −108.71 ± 8.51 kV/cm acting on each of the eight 12-Å-wide strained [111]-oriented In0.687Ga0.313As /In0.807Ga0.193As0.304P0.696 QWs of a semiconductor optical amplifier (SOA). The theoretical prediction of −112.24 kV/cm was in very good agreement, within the experimental error, with the value of the piezoelectric field extracted through the proposed procedure, which was also indirectly validated by comparing the experimental value of the 1s e-hh excitonic resonance Stark shift with the extracted one. Even though the implemented technique was specially designed to experimentally determine the piezoelectric field acting on each of the QWs of a multiple quantum well SOA, it can be applied to any p–i–n structure with electrodes and strained [111]-oriented zinc-blende QWs embedded in its intrinsic region. Remarkably, the method proposed here allows direct experimental determination of the piezoelectric field through an analytical expression, with which it is also possible to estimate, with high reliability, the precision of the result and how it is affected by the accuracy of each measuring instrument intervening in the procedure.
- Open Access
- 1 September 2017
- Published by Optica Publishing Group in Optics Express
- Vol. 25 (18) , 22066-22081
Demonstration of an all-optical feed-forward delay line buffer using the quadratic Stark effect and two-photon absorption in an SOA
We have inserted into an unbiased semiconductor optical amplifier (SOA) a powerful control beam, with photon energy slightly smaller than that of the band-gap of its active region, for exciting two-photon absorption and the quadratic Stark effect. For the available SOA, we estimated these phenomena generated a nonlinear absorption coefficient −865 cm/GW and induced an appreciable birefringence inside the amplifier waveguide, which significantly modified the polarization-state of a probe beam. Based on these effects, we have experimentally demonstrated the operation of an all-optical buffer, using an 80 Gb/s optical pulse comb, as well as an unbiased SOA, which was therefore, devoid of amplified spontaneous emission and pattern effects.- 1 September 2017
- Published by Optica Publishing Group in Optics Express
- Vol. 25 (18) , 22066-22081
Open AccessDemonstration of an all-optical feed-forward delay line buffer using the quadratic Stark effect and two-photon absorption in an SOA
We have inserted into an unbiased semiconductor optical amplifier (SOA) a powerful control beam, with photon energy slightly smaller than that of the band-gap of its active region, for exciting two-photon absorption and the quadratic Stark effect. For the available SOA, we estimated these phenomena generated a nonlinear absorption coefficient −865 cm/GW and induced an appreciable birefringence inside the amplifier waveguide, which significantly modified the polarization-state of a probe beam. Based on these effects, we have experimentally demonstrated the operation of an all-optical buffer, using an 80 Gb/s optical pulse comb, as well as an unbiased SOA, which was therefore, devoid of amplified spontaneous emission and pattern effects. - 27 March 2013
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 55 (6) , 1316-1321
All‐optical binary‐to‐octal encoder based on a semiconductor optical amplifier: Application to eight‐level amplitude‐shift keying signaling
- 27 March 2013
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 55 (6) , 1316-1321
All‐optical binary‐to‐octal encoder based on a semiconductor optical amplifier: Application to eight‐level amplitude‐shift keying signaling
- 13 November 2008
- Published by SPIE-Intl Soc Optical Eng
- Vol. 7135, 713526
Degradation by the cross-polarization modulation of the conversion efficiency of a wavelength converter based on FWM in a SOA
This communication addresses, theoretically and experimentally, the effect of the cross polarization modulation (XPolM) phenomenon on the performance of a wavelength converter based on a four wave mixing process (FWM) developed in a semiconductor optical amplifier (SOA). The main studied parameter for evaluating the performance of the wavelength converter is the conversion efficiency, whose degradation, provoked by the XPolM, is analyzed when the four wave mixing process is developed with input signals linearly co-polarized at 0, 45, 90, and -45 degrees. The analysis is based on the theoretical and experimental determinations of the polarization mismatch of the pump and probe signals. Finally, it is demonstrated that classic models lacking the inclusion of the XPolM effect can reflect a significant error in the estimation of the conversion efficiency of a wavelength converter based on FWM.
- 13 November 2008
- Published by SPIE-Intl Soc Optical Eng
- Vol. 7135, 713526
Degradation by the cross-polarization modulation of the conversion efficiency of a wavelength converter based on FWM in a SOA
This communication addresses, theoretically and experimentally, the effect of the cross polarization modulation (XPolM) phenomenon on the performance of a wavelength converter based on a four wave mixing process (FWM) developed in a semiconductor optical amplifier (SOA). The main studied parameter for evaluating the performance of the wavelength converter is the conversion efficiency, whose degradation, provoked by the XPolM, is analyzed when the four wave mixing process is developed with input signals linearly co-polarized at 0, 45, 90, and -45 degrees. The analysis is based on the theoretical and experimental determinations of the polarization mismatch of the pump and probe signals. Finally, it is demonstrated that classic models lacking the inclusion of the XPolM effect can reflect a significant error in the estimation of the conversion efficiency of a wavelength converter based on FWM.
- 1 January 2007
- Published by Elsevier in Optics Communications
- Vol. 269 (1) , 215-222
Evaluation of the cross-polarization modulation impact on the conversion efficiency of a four wave mixing process developed in a bulk-SOA
- 1 January 2007
- Published by Elsevier in Optics Communications
- Vol. 269 (1) , 215-222
Evaluation of the cross-polarization modulation impact on the conversion efficiency of a four wave mixing process developed in a bulk-SOA
- 1 January 2006
- Published by Walter de Gruyter GmbH in Journal of Optical Communications
- Vol. 27 (6) , 301-304
All-optical Half-adder using a Single UNI Gate
- 1 January 2006
- Published by Walter de Gruyter GmbH in Journal of Optical Communications
- Vol. 27 (6) , 301-304
All-optical Half-adder using a Single UNI Gate
- 1 July 2004
- Published by Elsevier in Optics Communications
- Vol. 237 (1-3) , 121-131
Design of an all-optical NOT XOR gate based on cross-polarization modulation in a semiconductor optical amplifier
- 1 July 2004
- Published by Elsevier in Optics Communications
- Vol. 237 (1-3) , 121-131
Design of an all-optical NOT XOR gate based on cross-polarization modulation in a semiconductor optical amplifier