Joonyoung Choi
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Joonyoung Choi has a total of 102 co-authors. Here are the top co-authors by number of shared publications:
- Younjung Jo
Department of Physics Kyungpook National University Daegu Republic of Korea
7 shared publications Younjung Jo
Department of Physics, Kyungpook National University, Daegu, Republic of Korea
5 shared publicationsJong Hyuk Kim
Department of Physics, Yonsei University, Seoul, Korea
4 shared publications- Young Jai Choi
Department of Physics, Yonsei University, Seoul, Korea
4 shared publications - Changyoung Kim
Seoul National University
3 shared publications - Je-Geun Park
Department of Physics and Astronomy, Seoul National University, Seoul, Republic of Korea
3 shared publications
Latest Publications
- Open Access
Crucial Role of Magnetic Dipole and Anomalous Field Dependence in NiPS 3
Has attracted considerable attention, yet the origin of its intriguing magnetic behaviors remains elusive due to limited insight into its low‐energy anisotropy. Here, high‐field torque magnetometry measurements are performed, revealing a previously unrecognized anisotropic spin response that reflects interaction terms beyond the standard XY or XXZ models. In combination with relativistic density functional theory calculations and magnetic force response theory, an effective low‐energy spin Hamiltonian is constructed, elucidating not only the observed anomalous magnetic behavior but also other recent experiments. Remarkably, the magnetic dipole interaction and the associated spin‐flop transition play a crucial role in driving the deviation from two‐dimensional spin alignment, providing direct insight into the underlying anisotropic energy hierarchy. The generalized Hamiltonian can serve as the important fundamental ground for future study, and our approach adopted here will hopefully be relevant to many other related material systems.
Open AccessCrucial Role of Magnetic Dipole and Anomalous Field Dependence in NiPS 3
Has attracted considerable attention, yet the origin of its intriguing magnetic behaviors remains elusive due to limited insight into its low‐energy anisotropy. Here, high‐field torque magnetometry measurements are performed, revealing a previously unrecognized anisotropic spin response that reflects interaction terms beyond the standard XY or XXZ models. In combination with relativistic density functional theory calculations and magnetic force response theory, an effective low‐energy spin Hamiltonian is constructed, elucidating not only the observed anomalous magnetic behavior but also other recent experiments. Remarkably, the magnetic dipole interaction and the associated spin‐flop transition play a crucial role in driving the deviation from two‐dimensional spin alignment, providing direct insight into the underlying anisotropic energy hierarchy. The generalized Hamiltonian can serve as the important fundamental ground for future study, and our approach adopted here will hopefully be relevant to many other related material systems.
- Open Access
- 21 September 2026
- Published by Springer Nature in Communications Materials
Signatures of canted ferrimagnetism and higher-order anisotropy in the nodal-line magnetic semiconductor Mn3Si2Te6
- 21 September 2026
- Published by Springer Nature in Communications Materials
Open AccessSignatures of canted ferrimagnetism and higher-order anisotropy in the nodal-line magnetic semiconductor Mn3Si2Te6
- Open Access
- 21 September 2026
- Published by Wiley in Advanced Science
- p. e77738
Colossal Magnetic‐Field‐Induced Anomalous Hall Conductivity in a Kagome Antiferromagnet YMn 6 Sn 6
Kagome‐lattice magnets provide a fertile ground for exploring exotic electronic phases due to topological band structures and complex magnetic orders. Yet, how these ingredients dictate unconventional magnetotransport responses, crucial for possible spintronic applications, has remained elusive. Here, we show that a prototypical kagome antiferromagnet exhibits significant magnetic‐field‐driven redistribution of Berry curvature and the colossal anomalous Hall conductivity (AHC). Under high magnetic fields, spin canting induces a pronounced spin splitting of the flat and Dirac bands near the Fermi level, dramatically enhancing the Berry curvature. The resulting AHC reaches 2.5 10 S/cm, far exceeding the intrinsic Berry curvature predictions and ranking among the highest reported in magnetic systems. This colossal AHC enhancement is attributed to a synergy between field‐tuned Berry curvature and enhanced skew scattering in the clean limit. Our findings highlight the critical role of magnetic‐field‐controlled spin splitting in engineering Berry curvature and anomalous magnetotransport in clean kagome magnets.
- 21 September 2026
- Published by Wiley in Advanced Science
- p. e77738
Open AccessColossal Magnetic‐Field‐Induced Anomalous Hall Conductivity in a Kagome Antiferromagnet YMn 6 Sn 6
Kagome‐lattice magnets provide a fertile ground for exploring exotic electronic phases due to topological band structures and complex magnetic orders. Yet, how these ingredients dictate unconventional magnetotransport responses, crucial for possible spintronic applications, has remained elusive. Here, we show that a prototypical kagome antiferromagnet exhibits significant magnetic‐field‐driven redistribution of Berry curvature and the colossal anomalous Hall conductivity (AHC). Under high magnetic fields, spin canting induces a pronounced spin splitting of the flat and Dirac bands near the Fermi level, dramatically enhancing the Berry curvature. The resulting AHC reaches 2.5 10 S/cm, far exceeding the intrinsic Berry curvature predictions and ranking among the highest reported in magnetic systems. This colossal AHC enhancement is attributed to a synergy between field‐tuned Berry curvature and enhanced skew scattering in the clean limit. Our findings highlight the critical role of magnetic‐field‐controlled spin splitting in engineering Berry curvature and anomalous magnetotransport in clean kagome magnets.
- Open Access
- 13 July 2026
- Published by Springer Nature in Nature Communications
- Vol. 17 (1) , 8620
Interfacial chirality-induced magnetic-field-free switching with high energy efficiency in all-vdW heterostructures
Chirality, a central concept across many scientific disciplines, continues to inspire the discovery of novel physical phenomena. In condensed matter physics, structural chirality—defined by the absence of mirror plane symmetries—has primarily been explored in bulk materials. However, new chiral phenomena can emerge uniquely at the interface, distinct from their bulk counterparts, when a chiral material forms a heterostructure. Here, we demonstrate that all van-der-Waals (vdW) heterostructure composed of the chiral Co1/3TaS2 and the achiral vdW ferromagnet Fe3GeTe2 exhibits two distinct and unconventional spin-orbit torques originating from the interfacial chirality. These torques enable magnetic-field-free switching of perpendicular magnetization with ultralow current density \( \sim \,{10}^{6}\,{\text{A}/\text{cm}}^{2}\) and minimal power dissipation \( < {10}^{15}\,{\text{W}/\text{m}}^{3}\). Moreover, by replacing Fe3GeTe2 with a similar vdW ferromagnet, Fe3GaTe2, but of higher Curie temperature, we achieved the magnetic-field-free switching at room temperature in the Fe3GaTe2/Co1/3TaS2 vdW heterostructure. Our findings establish interfacial chirality as a powerful new handle for spintronic control, opening a new pathway to explore chirality-induced phenomena beyond the bulk symmetry constraints – and paving the way toward highly efficient, low-power spintronic devices based on all-vdW heterostructures.- 13 July 2026
- Published by Springer Nature in Nature Communications
- Vol. 17 (1) , 8620
Open AccessInterfacial chirality-induced magnetic-field-free switching with high energy efficiency in all-vdW heterostructures
Chirality, a central concept across many scientific disciplines, continues to inspire the discovery of novel physical phenomena. In condensed matter physics, structural chirality—defined by the absence of mirror plane symmetries—has primarily been explored in bulk materials. However, new chiral phenomena can emerge uniquely at the interface, distinct from their bulk counterparts, when a chiral material forms a heterostructure. Here, we demonstrate that all van-der-Waals (vdW) heterostructure composed of the chiral Co1/3TaS2 and the achiral vdW ferromagnet Fe3GeTe2 exhibits two distinct and unconventional spin-orbit torques originating from the interfacial chirality. These torques enable magnetic-field-free switching of perpendicular magnetization with ultralow current density \( \sim \,{10}^{6}\,{\text{A}/\text{cm}}^{2}\) and minimal power dissipation \( < {10}^{15}\,{\text{W}/\text{m}}^{3}\). Moreover, by replacing Fe3GeTe2 with a similar vdW ferromagnet, Fe3GaTe2, but of higher Curie temperature, we achieved the magnetic-field-free switching at room temperature in the Fe3GaTe2/Co1/3TaS2 vdW heterostructure. Our findings establish interfacial chirality as a powerful new handle for spintronic control, opening a new pathway to explore chirality-induced phenomena beyond the bulk symmetry constraints – and paving the way toward highly efficient, low-power spintronic devices based on all-vdW heterostructures. - Open Access
- 1 May 2026
- Published by AIP Publishing in APL Materials
- Vol. 14 (5)
Interfacial engineering of Fe3O4/reduced graphene oxide nanocomposites for spintronic applications
Interface-engineered hybrid nanocomposites offer considerable potential for spintronic applications, yet their spin-dependent transport mechanisms remain poorly understood. Here, we report the solvothermal synthesis of Fe3O4/reduced graphene oxide (RGO) nanocomposites, in which ∼25 nm Fe3O4 nanoparticles are uniformly dispersed on conductive RGO sheets. The nanocomposites exhibit a 250-fold decrease in room-temperature resistance, and their low-temperature charge transport is dominated by disorder-driven, non-ideal hopping conduction associated with interfacial coupling and percolative transport pathways, as revealed by Zabrodskii analysis. Magnetotransport measurements (2–300 K, up to 9 T) show a crossover from negative to positive magnetoresistance, reaching +2.0% at 2 K, which is five times larger than that of pristine Fe3O4. The magnetoresistance behavior is interpreted in terms of competing spin-dependent scattering and field-enhanced localization in the disordered Fe3O4/RGO network. These findings demonstrate that Fe3O4/RGO nanocomposites provide a versatile platform for controlling spin-dependent transport through interfacial and disorder engineering.
- 1 May 2026
- Published by AIP Publishing in APL Materials
- Vol. 14 (5)
Open AccessInterfacial engineering of Fe3O4/reduced graphene oxide nanocomposites for spintronic applications
Interface-engineered hybrid nanocomposites offer considerable potential for spintronic applications, yet their spin-dependent transport mechanisms remain poorly understood. Here, we report the solvothermal synthesis of Fe3O4/reduced graphene oxide (RGO) nanocomposites, in which ∼25 nm Fe3O4 nanoparticles are uniformly dispersed on conductive RGO sheets. The nanocomposites exhibit a 250-fold decrease in room-temperature resistance, and their low-temperature charge transport is dominated by disorder-driven, non-ideal hopping conduction associated with interfacial coupling and percolative transport pathways, as revealed by Zabrodskii analysis. Magnetotransport measurements (2–300 K, up to 9 T) show a crossover from negative to positive magnetoresistance, reaching +2.0% at 2 K, which is five times larger than that of pristine Fe3O4. The magnetoresistance behavior is interpreted in terms of competing spin-dependent scattering and field-enhanced localization in the disordered Fe3O4/RGO network. These findings demonstrate that Fe3O4/RGO nanocomposites provide a versatile platform for controlling spin-dependent transport through interfacial and disorder engineering.
- 17 April 2026
- Published by Elsevier in Current Applied Physics
- Vol. 88, 29-35
Definitive Fermi-surface mapping of high-purity RuO2 via angle-dependent quantum oscillations
- 17 April 2026
- Published by Elsevier in Current Applied Physics
- Vol. 88, 29-35
Definitive Fermi-surface mapping of high-purity RuO2 via angle-dependent quantum oscillations
- 29 April 2025
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 134 (17) , 176701
Current-Driven Collective Control of Helical Spin Texture in van der Waals Antiferromagnet
Electrical control of quantum magnetic states is essential in spintronic science. Initial studies on the ferromagnetic state control were extended to collinear antiferromagnets and, more recently, noncollinear antiferromagnets. However, electrical control mechanisms of such exotic magnetic states remain poorly understood. Here, we report the first experimental and theoretical example of the current control of helical antiferromagnets, arising from the competition between collinear antiferromagnetic exchange and interlayer Dzyaloshinskii-Moriya interaction in new van der Waals (vdW) material Ni_{1/3}NbS_{2}. Due to the intrinsic broken inversion symmetry, an in-plane current generates spin-orbit torque that, in turn, interacts directly with the helical antiferromagnetic order. Our theoretical analyses indicate that a weak ferromagnetic order coexists due to the Dzyaloshinskii-Moriya interaction, mediating the spin-orbit torque to collectively rotate the helical antiferromagnetic order. Our Ni_{1/3}NbS_{2} nanodevice experiments produce current-dependent resistance change consistent with the theoretical prediction. This Letter widens our understanding of the electrical control of helical antiferromagnets and promotes vdW quantum magnets as interesting material platforms for electrical control.
- 29 April 2025
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 134 (17) , 176701
Current-Driven Collective Control of Helical Spin Texture in van der Waals Antiferromagnet
Electrical control of quantum magnetic states is essential in spintronic science. Initial studies on the ferromagnetic state control were extended to collinear antiferromagnets and, more recently, noncollinear antiferromagnets. However, electrical control mechanisms of such exotic magnetic states remain poorly understood. Here, we report the first experimental and theoretical example of the current control of helical antiferromagnets, arising from the competition between collinear antiferromagnetic exchange and interlayer Dzyaloshinskii-Moriya interaction in new van der Waals (vdW) material Ni_{1/3}NbS_{2}. Due to the intrinsic broken inversion symmetry, an in-plane current generates spin-orbit torque that, in turn, interacts directly with the helical antiferromagnetic order. Our theoretical analyses indicate that a weak ferromagnetic order coexists due to the Dzyaloshinskii-Moriya interaction, mediating the spin-orbit torque to collectively rotate the helical antiferromagnetic order. Our Ni_{1/3}NbS_{2} nanodevice experiments produce current-dependent resistance change consistent with the theoretical prediction. This Letter widens our understanding of the electrical control of helical antiferromagnets and promotes vdW quantum magnets as interesting material platforms for electrical control.
- Open Access
- 30 December 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-10
Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms
Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III–V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor \(\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)\) of \(0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}\) at 4 K using more than 10 times less power consumption than CMOS.- 30 December 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-10
Open AccessCryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms
Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III–V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor \(\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)\) of \(0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}\) at 4 K using more than 10 times less power consumption than CMOS. - Open Access
- 21 March 2024
- Published by Wiley in Advanced Science
- Vol. 11 (20) , 2307288
Tunable Colossal Anomalous Hall Conductivity in Half‐Metallic Material Induced by d ‐Wave‐Like Spin‐Orbit Gap
The anomalous Hall conductivity (AHC) in magnetic materials, resulting from inverted band topology, has emerged as a key adjustable function in spin‐torque devices and advanced magnetic sensors. Among systems with near‐half‐metallicity and broken time‐reversal symmetry, cobalt disulfide (CoS 2 ) has proven to be a material capable of significantly enhancing its AHC. In this study, the AHC of CoS 2 is empirically assessed by manipulating the chemical potential through Fe‐ (hole) and Ni‐ (electron) doping. The primary mechanism underlying the colossal AHC is identified through the application of density functional theory and tight‐binding analyses. The main source of this substantial AHC is traced to four spin‐polarized massive Dirac dispersions in the k z = 0 plane of the Brillouin zone, located slightly below the Fermi level. In Co 0.95 Fe 0.05 S 2 , the AHC, which is directly proportional to the momentum‐space integral of the Berry curvature (BC), reached a record‐breaking value of 2507 Ω −1 cm −1 . This is because the BCs of the four Dirac dispersions all exhibit the same sign, a consequence of the d ‐wave‐like spin‐orbit coupling among spin‐polarized e g orbitals.
- 21 March 2024
- Published by Wiley in Advanced Science
- Vol. 11 (20) , 2307288
Open AccessTunable Colossal Anomalous Hall Conductivity in Half‐Metallic Material Induced by d ‐Wave‐Like Spin‐Orbit Gap
The anomalous Hall conductivity (AHC) in magnetic materials, resulting from inverted band topology, has emerged as a key adjustable function in spin‐torque devices and advanced magnetic sensors. Among systems with near‐half‐metallicity and broken time‐reversal symmetry, cobalt disulfide (CoS 2 ) has proven to be a material capable of significantly enhancing its AHC. In this study, the AHC of CoS 2 is empirically assessed by manipulating the chemical potential through Fe‐ (hole) and Ni‐ (electron) doping. The primary mechanism underlying the colossal AHC is identified through the application of density functional theory and tight‐binding analyses. The main source of this substantial AHC is traced to four spin‐polarized massive Dirac dispersions in the k z = 0 plane of the Brillouin zone, located slightly below the Fermi level. In Co 0.95 Fe 0.05 S 2 , the AHC, which is directly proportional to the momentum‐space integral of the Berry curvature (BC), reached a record‐breaking value of 2507 Ω −1 cm −1 . This is because the BCs of the four Dirac dispersions all exhibit the same sign, a consequence of the d ‐wave‐like spin‐orbit coupling among spin‐polarized e g orbitals.
- Open Access
- 18 March 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1
Author Correction: Kondo interaction in FeTe and its potential role in the magnetic order
- 18 March 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1
Open AccessAuthor Correction: Kondo interaction in FeTe and its potential role in the magnetic order