Yiming Liao
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Yiming Liao has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
- Haolan Ma
College of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
1 shared publication - Jiang Lan
College of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
1 shared publication - Xiaoli Ji
Nanjing University
1 shared publication - Yaozu Guo
Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210046, Jiangsu, Peoples R China
1 shared publication
Latest Publications
- Open Access
- 30 October 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (11) , 1869
Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process
Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 × 109 cmHz1/2/W at 25 μA and a maximum of 6.2 × 108 cmHz1/2/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption.
- 30 October 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (11) , 1869
Open AccessImpact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process
Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 × 109 cmHz1/2/W at 25 μA and a maximum of 6.2 × 108 cmHz1/2/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption.