Sohyeon Kim
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Sohyeon Kim has a total of 24 co-authors. Here are the top co-authors by number of shared publications:
- Kyoung-Kook Kim
Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea
5 shared publications - Il-Kyu Park
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, South Korea
2 shared publications - Ju-Eun Yang
Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea
2 shared publications - Min-Woo Park
Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea
2 shared publications - Yoon-Seo Park
Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea
2 shared publications Gyeong-Hun Jung
Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea
1 shared publication
Latest Publications
- Open Access
- 16 September 2025
- Published by MDPI AG in Nanomaterials
- Vol. 15 (18) , 1426
Nano-Heterojunction NO2 Gas Sensor Based on n-ZnO Nanorods/p-NiO Nanoparticles Under UV Illumination at Room Temperature
Room-temperature (RT) gas sensors for nitrogen dioxide (NO2) detection face persistent challenges, including reliance on high operating temperatures and inefficient charge carrier utilization under UV activation. To address these limitations, we engineered a p-n nano-heterojunction (NHJ) gas sensor by integrating p-type nickel oxide (NiO) nanoparticles onto n-type zinc oxide (ZnO) nanorods. This architecture leverages UV-driven carrier generation and interfacial electric fields at the NHJ to suppress recombination, enabling unprecedented RT performance. By optimizing thermal annealing conditions, we achieved a well-defined heterojunction with uniform NiO distribution on the top of the ZnO nanorods, validated through electron microscopy and X-ray photoelectron spectroscopy. The resulting sensor exhibits a 5.4-fold higher normalized response to 50 ppm NO2 under 365 nm UV illumination compared to pristine ZnO, alongside rapid recovery and stable cyclability. The synergistic combination of UV-assisted carrier generation and heterojunction-driven interfacial modulation offers a promising direction for next-generation RT gas sensors aimed at environmental monitoring.
- 16 September 2025
- Published by MDPI AG in Nanomaterials
- Vol. 15 (18) , 1426
Open AccessNano-Heterojunction NO2 Gas Sensor Based on n-ZnO Nanorods/p-NiO Nanoparticles Under UV Illumination at Room Temperature
Room-temperature (RT) gas sensors for nitrogen dioxide (NO2) detection face persistent challenges, including reliance on high operating temperatures and inefficient charge carrier utilization under UV activation. To address these limitations, we engineered a p-n nano-heterojunction (NHJ) gas sensor by integrating p-type nickel oxide (NiO) nanoparticles onto n-type zinc oxide (ZnO) nanorods. This architecture leverages UV-driven carrier generation and interfacial electric fields at the NHJ to suppress recombination, enabling unprecedented RT performance. By optimizing thermal annealing conditions, we achieved a well-defined heterojunction with uniform NiO distribution on the top of the ZnO nanorods, validated through electron microscopy and X-ray photoelectron spectroscopy. The resulting sensor exhibits a 5.4-fold higher normalized response to 50 ppm NO2 under 365 nm UV illumination compared to pristine ZnO, alongside rapid recovery and stable cyclability. The synergistic combination of UV-assisted carrier generation and heterojunction-driven interfacial modulation offers a promising direction for next-generation RT gas sensors aimed at environmental monitoring.
- Open Access
- 11 May 2025
- Published by MDPI AG in Chemosensors
- Vol. 13 (5) , 177
A UV-Photon-Energy-Integrated Gas Sensor Based on Pt-Nanoparticle-Decorated TiO2 Nanorods for Room-Temperature Hydrogen Detection
Hydrogen sensors play a crucial role in ensuring safety in various industrial applications. In this study, we demonstrated the use of a room-temperature hydrogen gas sensor based on Pt-nanoparticle-decorated TiO2 nanorods (TiO2 NRs/Pt NP). The TiO2 NRs were synthesized via a hydrothermal method, followed by Pt deposition using sputtering and thermal annealing. Under UV illumination, the TiO2 NR/Pt NP gas sensor exhibited a remarkable response of 2.4 at a 1% hydrogen concentration, which is approximately 5.9 times higher than that of bare TiO2 NRs measured in the dark. This enhancement is attributed to the synergistic effect of Pt NPs, which promote charge separation and spillover for oxygen molecules, and UV activation, which generates additional carriers. Moreover, the sensor demonstrated stable and reliable detection of hydrogen concentrations up to 1% without the need for external heating, underscoring its practical applicability under ambient conditions. These results demonstrate that TiO2 NRs/Pt NP, combined with UV activation, provide a promising approach for highly sensitive and room-temperature hydrogen detection, offering significant potential for hydrogen monitoring and hydrogen energy systems.
- 11 May 2025
- Published by MDPI AG in Chemosensors
- Vol. 13 (5) , 177
Open AccessA UV-Photon-Energy-Integrated Gas Sensor Based on Pt-Nanoparticle-Decorated TiO2 Nanorods for Room-Temperature Hydrogen Detection
Hydrogen sensors play a crucial role in ensuring safety in various industrial applications. In this study, we demonstrated the use of a room-temperature hydrogen gas sensor based on Pt-nanoparticle-decorated TiO2 nanorods (TiO2 NRs/Pt NP). The TiO2 NRs were synthesized via a hydrothermal method, followed by Pt deposition using sputtering and thermal annealing. Under UV illumination, the TiO2 NR/Pt NP gas sensor exhibited a remarkable response of 2.4 at a 1% hydrogen concentration, which is approximately 5.9 times higher than that of bare TiO2 NRs measured in the dark. This enhancement is attributed to the synergistic effect of Pt NPs, which promote charge separation and spillover for oxygen molecules, and UV activation, which generates additional carriers. Moreover, the sensor demonstrated stable and reliable detection of hydrogen concentrations up to 1% without the need for external heating, underscoring its practical applicability under ambient conditions. These results demonstrate that TiO2 NRs/Pt NP, combined with UV activation, provide a promising approach for highly sensitive and room-temperature hydrogen detection, offering significant potential for hydrogen monitoring and hydrogen energy systems.
- Open Access
High-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes
The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for both the channel layer and transparent conductive electrodes (TCEs). The a-IZTO was deposited using radio-frequency magnetron sputtering, with its composition adjusted for both channel and electrode functionality. XRD analysis confirmed the amorphous nature of the a-IZTO layers, ensuring structural stability post-thermal annealing. The a-IZTO TCEs demonstrated high optical transparency (89.57% in the visible range) and excellent flexibility, maintaining a low sheet resistance with minimal degradation even after 100,000 bending cycles. The fabricated AT-TFTs exhibit superior field-effect mobility (30.12 cm2/V·s), an on/off current ratio exceeding 108, and a subthreshold swing of 0.36 V/dec. The AT-TFT device demonstrated a minimum transmittance of 75.46% in the visible light range, confirming its suitability for next-generation flexible and transparent displays.
Open AccessHigh-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes
The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for both the channel layer and transparent conductive electrodes (TCEs). The a-IZTO was deposited using radio-frequency magnetron sputtering, with its composition adjusted for both channel and electrode functionality. XRD analysis confirmed the amorphous nature of the a-IZTO layers, ensuring structural stability post-thermal annealing. The a-IZTO TCEs demonstrated high optical transparency (89.57% in the visible range) and excellent flexibility, maintaining a low sheet resistance with minimal degradation even after 100,000 bending cycles. The fabricated AT-TFTs exhibit superior field-effect mobility (30.12 cm2/V·s), an on/off current ratio exceeding 108, and a subthreshold swing of 0.36 V/dec. The AT-TFT device demonstrated a minimum transmittance of 75.46% in the visible light range, confirming its suitability for next-generation flexible and transparent displays.
- Open Access
- 17 October 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (20) , 2780
Convergence Gas Sensors with One-Dimensional Nanotubes and Pt Nanoparticles Based on Ultraviolet Photonic Energy for Room-Temperature NO2 Gas Sensing
Zinc oxide (ZnO) is a promising material for nitrogen dioxide (NO2) gas sensors because of its nontoxicity, low cost, and small size. We fabricated one-dimensional (1D) and zero-dimensional (0D) convergence gas sensors activated via ultraviolet (UV) photonic energy to sense NO2 gas at room temperature. One-dimensional ZnO nanorod (ZNR)-based and ZnO nanotube (ZNT)-based gas sensors were synthesized using a simple hydrothermal method. All the sensors were tested under UV irradiation (365 nm) so that they could be operated at room temperature rather than a high temperature. In addition, we decorated 0D Pt nanoparticles (NPs) on the gas sensors to further improve their sensing responsivity. The NO2-sensing response of the ZNT/Pt NP convergence gas sensor was 2.93 times higher than that of the ZNR gas sensor. We demonstrated the complex effects of UV radiation on 1D ZnO nanostructures and 0D metal nanostructures in NO2 gas sensing.
- 17 October 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (20) , 2780
Open AccessConvergence Gas Sensors with One-Dimensional Nanotubes and Pt Nanoparticles Based on Ultraviolet Photonic Energy for Room-Temperature NO2 Gas Sensing
Zinc oxide (ZnO) is a promising material for nitrogen dioxide (NO2) gas sensors because of its nontoxicity, low cost, and small size. We fabricated one-dimensional (1D) and zero-dimensional (0D) convergence gas sensors activated via ultraviolet (UV) photonic energy to sense NO2 gas at room temperature. One-dimensional ZnO nanorod (ZNR)-based and ZnO nanotube (ZNT)-based gas sensors were synthesized using a simple hydrothermal method. All the sensors were tested under UV irradiation (365 nm) so that they could be operated at room temperature rather than a high temperature. In addition, we decorated 0D Pt nanoparticles (NPs) on the gas sensors to further improve their sensing responsivity. The NO2-sensing response of the ZNT/Pt NP convergence gas sensor was 2.93 times higher than that of the ZNR gas sensor. We demonstrated the complex effects of UV radiation on 1D ZnO nanostructures and 0D metal nanostructures in NO2 gas sensing.
- Open Access
- 9 November 2022
- Published by Royal Society of Chemistry (RSC) in Nanoscale Advances
- Vol. 5 (4) , 1079-1085
Self-array of one-dimensional GaN nanorods using the electric field on dielectrophoresis for the photonic emitters of display pixel
GaN nanorod (GNR)-integrated photonic emitters (GIPEs) with horizontally self-arrayed GNRs were fabricated for the next generation displays. The self-array performance of GNRs was enhanced by the effective electric-field area.
- 9 November 2022
- Published by Royal Society of Chemistry (RSC) in Nanoscale Advances
- Vol. 5 (4) , 1079-1085
Open AccessSelf-array of one-dimensional GaN nanorods using the electric field on dielectrophoresis for the photonic emitters of display pixel
GaN nanorod (GNR)-integrated photonic emitters (GIPEs) with horizontally self-arrayed GNRs were fabricated for the next generation displays. The self-array performance of GNRs was enhanced by the effective electric-field area.