Yeunwoo Kwon
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Yeunwoo Kwon has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
- Beomsoo Chun
Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and Soft Foundry Institute, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
1 shared publication - Ganghyun Park
Department of Electrical and Computer Engineering, and SOFT Foundry Institute Inter‐university Semiconductor Research Center Seoul National University Seoul Republic of Korea
1 shared publication - Geun Woo Baek
Department of Electrical and Computer Engineering Inter‐university Semiconductor Research Center SOFT Foundry Institute Seoul National University Seoul Republic of Korea
1 shared publication - Hansol Seo
Department of Electrical and Computer Engineering, and SOFT Foundry Institute Inter‐university Semiconductor Research Center Seoul National University Seoul Republic of Korea
1 shared publication - Heesun Yang
Department of Materials Science and Engineering, Hongik University, Seoul, Republic of Korea
1 shared publication - Jeonghun Kwak
Department of Electrical and Computer Engineering Inter‐university Semiconductor Research Center, and SOFT Foundry Institute Seoul National University Seoul Republic of Korea
1 shared publication
Latest Publications
- Open Access
Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors
This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.
Open AccessProgress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors
This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.