LZLin Zhao

Lin Zhao

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Lin Zhao has a total of 42 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Dimension-Dependent Nonlinear Optical Properties of Stanene Nanosheets

    by Yifan Huang, Jingkun Wang, Bowen Bai, Min Zhao, Xiaojuan Zhen, Lei Zhao, Xinping Zhai, Lin Zhao, Xuesong Leng

    Stanene (Sn)-based materials, with a graphene-like hexagonal structure, are now attracting considerable interest for potential applications in photoelectricity. However, the nonlinear optical properties of stanene remain largely unexplored. In this work, we prepared different sizes of stanene by liquid phase exfoliation and differential centrifugation methods, including two-dimensional (2D) Sn nanosheets (NSs) and zero-dimensional (0D) Sn nanodots (NDs). Z-scan measurements reveal that 2D Sn NSs exhibited high saturable absorption behavior, while the 0D Sn NDs led to reverse saturable absorption. Femtosecond ultrafast transient absorption spectra revealed that the reverse saturable absorption of Sn NDs is derived from a stronger excited state absorption and faster exciton relaxation dynamics. This research expands the potential applications of stanene in laser shielding and other ultrafast photonics technologies.


  • Open Access

    Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

    by Jiayu Tian, Rongxing Cao, Yan Liu, Yulong Cai, Bo Mei, Lin Zhao, Shuai Cui, He Lv, Yuxiong Xue

    As the feature size of integrated circuit decreases, the critical charge of single-event effect decreases as well, making nano-scale devices more susceptible to the high-energy charged particles during their application in space. Here, we study the electron-induced single-event effect in 28 nm static random-access memory (SRAM)-based field programmable gate array (FPGA) utilizing high-energy electrons with energy of 1 MeV~5 MeV. The experimental results demonstrate that the 3 MeV electrons can cause single-event functional interrupts (SEFIs) in FPGA, while the electrons with other energies cannot. To further explore the mechanism of electron-induced SEFIs in this nanoscale FPGA, we combined Monte Carlo, Technology Computer-Aided Design (TCAD), and Simulation Program with Integrated Circuit Emphasis (SPICE) simulations. It is revealed that the SEFI was mainly caused by the direct ionization effect of high-energy electrons, and the SEFI was related to the interactions between multiple sensitive nodes.


  • Open Access

    Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory

    by Yan Liu, Rongxing Cao, Jiayu Tian, Yulong Cai, Bo Mei, Lin Zhao, Shuai Cui, He Lv, Xianghua Zeng, Yuxiong Xue

    Static random-access memory (SRAM), a pivotal component in integrated circuits, finds extensive applications and remains a focal point in the global research on single-event effects (SEEs). Prolonged exposure to irradiation, particularly the displacement damage effect (DD) induced by high-energy protons, poses a substantial threat to the performance of electronic devices. Additionally, the impact of proton displacement damage effects on the performance of a six-transistor SRAM with an asymmetric structure is not well understood. In this paper, we conducted an analysis of the impact and regularities of DD on the upset cross-sections of SRAM and simulated the single-event upset (SEU) characteristics of SRAM using the Monte Carlo method. The research findings reveal an overall increasing trend in upset cross-sections with the augmentation of proton energy. Notably, the effect of proton irradiation on the SEU cross-section is related to the storage state of SRAM. Due to the asymmetry in the distribution of sensitive regions during the storage of “0” and “1”, the impact of DD in the two initial states is not uniform. These findings can be used to identify the causes of SEU in memory devices.


  • Open Access

    Comparison of CrN Coatings Prepared Using High-Power Impulse Magnetron Sputtering and Direct Current Magnetron Sputtering

    by Heda Bai, Jin Li, Jialai Gao, Jinyang Ni, Yaxiong Bai, Jie Jian, Lin Zhao, Bowen Bai, Zeyun Cai, Jianchao He, et al.

    Chromium Nitride (CrN) coatings have widespread utilization across numerous industrial applications, primarily attributed to their excellent properties. Among the different methods for CrN coating synthesis, direct current magnetron sputtering (DCMS) has been the dominant technique applied. Nonetheless, with the expanded applications of CrN coatings, the need for enhanced mechanical performance is concurrently escalating. High-power impulse magnetron sputtering (HiPIMS), an innovative coating deposition approach developed over the past three decades, is gaining recognition for its capability of yielding coatings with superior mechanical attributes, thereby drawing significant research interest. Considering that the mechanical performance of a coating is fundamentally governed by its microstructural properties, a comprehensive review of CrN coatings fabricated through both techniques is presented. This review of recent literature aims to embark on an insightful comparison between DCMS and HiPIMS, followed by an examination of the microstructure of CrN coatings fabricated via both techniques. Furthermore, the exploration of the underlying factors contributing to the disparities in mechanical properties observed in CrN coatings is revealed. An assessment of the advantages and potential shortcomings of HiPIMS is discussed, offering insight into CrN coating fabrication.


  • Open Access

    Review on the Corrosion Behaviour of Nickel-Based Alloys in Supercritical Carbon Dioxide under High Temperature and Pressure

    by Yiyao Kang, Xuesong Leng, Lin Zhao, Bowen Bai, Xiaoya Wang, Hongsheng Chen

    Supercritical carbon dioxide (S-CO2) has the advantages of amphoteric liquid and gas, which possesses many unique characteristics, such as good compressibility, high density, high solubility, good fluidity and low viscosity. The Brayton cycle with S-CO2 is considered to have many promising applications, especially for power conversion industries. However, the corrosion and degradation of structural materials hinder the development and application of the Brayton cycle with S-CO2. Nickel-based alloys have the best corrosion resistance in S-CO2 environments compared to austenitic stainless steels and ferritic/martensitic steels. Thus, the present article mainly reviews the corrosion behaviour of nickel-based alloys in S-CO2 under high temperature and pressure. The effect of alloying elements and environment parameters on the corrosion behaviour of different nickel-based alloys are systematically summarized. The conclusion and outlook are given at the end.


  • Coupling oxygen vacancy gradient distribution and flexoelectric effects for enhanced photovoltaic performance in bismuth ferrite films

    by Zehao Sun, Jie Wei, Yunpeng Li, Zhiting Liu, Minchuan Xiahou, Guogang Chen, Lin Zhao, Zhenxiang Cheng

    Although the anomalous ferroelectric photovoltaic effect of bismuth ferrite (BiFeO3) has recently drawn widespread attention, very low photocurrent density and poor power conversion efficiency severely hinder its practical application as a photovoltaic device. A novel photovoltaic architecture was herein designed and constructed to achieve enhanced photovoltaic performance in (Sm and Ni) gradient-doped BiFeO3 multilayers. The experimental results and analysis show that the gradient distribution of oxygen vacancies greatly enhances the photovoltaic performance of the gradient-doped BiFeO3 multilayer. In particular, its photocurrent density (Jsc) of 80 μA cm−2 and open-circuit voltage (Voc) of 0.49 V are much higher than those of pure BiFeO3 films reported in previous literature. Meanwhile, a possible underlying mechanism was finally proposed to demonstrate the enhanced photovoltaic property, that is, the oxygen vacancy gradient distribution coupled with the flexoelectric effect greatly enhances the separation of photogenerated carriers, thereby ultimately enhancing the photovoltaic output of the above photovoltaic architecture.


  • Open Access

    Effect of Coating Thickness on the Atomic Oxygen Resistance of Siloxane Coatings Synthesized by Plasma Polymerization Deposition Technique

    by Lin Zhao, Xuesong Leng, Bowen Bai, Rui Zhao, Zeyun Cai, Jianchao He, Jin Li, Hongsheng Chen

    Atomic oxygen in the low Earth orbit (LEO) environment is highly oxidizing. Due to the high flight speed of spacecraft, the relative kinetic energy of high-flux atomic oxygen bombarding the spacecraft surface can reach up to about 5 eV. Therefore, atomic oxygen is one of the most dangerous space environment factors in LEO, which seriously affects the safe operation and service life of spacecraft in orbit. In order to meet the requirements for the high reliability and long lifetime of spacecraft, effective protection measures must be taken on their sensitive surfaces. Siloxane is a coating with an organic–inorganic hybrid structure. Compared with SiO2 and other inorganic atomic oxygen protective coatings, it has better flexibility and is better at anti-atomic oxygen performance. In this paper, the plasma polymerization deposition technique was used to prepare large-area siloxane coatings on different substrates with different thicknesses for improving atomic oxygen resistance by optimizing the process parameters. The thickness of the coating was measured by different methods, and the results showed that the thickness distribution was consistent. By observing the surface morphology of the coating, it was uniform and compact without obvious defects, so the uniformity of large-area coating was also ideal. The adhesion and heat/humidity resistance of siloxane coatings were examined by pull-off testing and damp-heat testing, respectively. The results showed that the siloxane coatings with a thickness of about 400 nm exhibited better physical properties. At the same time, the ground simulation testing of atomic oxygen confirmed that siloxane coatings with a thickness of 418 nm presented the best performance of atomic oxygen resistance. The atomic oxygen erosion yield of siloxane coatings with a thickness of 418 nm was as low as 5.39 × 10−27 cm3/atoms, which was three orders of magnitude lower than that of the uncoated Kapton substrate and presented a good anti-atomic oxygen performance. Meanwhile, it has also successfully passed the damp-heat test. The coating thickness is only several hundred nanometers and does not increase the weight of the spacecraft, which makes it a relatively ideal LEO atomic oxygen protection material. Furthermore, a possible mechanism was proposed to explicate the physicochemical process of atomic oxygen attacking the coating materials.


  • Upconversion boosting pollutants degradation efficiency in wide-spectrum responsive photocatalysts

    by Jie Wei, Zhiting Liu, Zehao Sun, Yunpeng Li, Chunfang Wu, Lin Zhao