Yahya Bougdid
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Yahya Bougdid has a total of 27 co-authors. Here are the top co-authors by number of shared publications:
- Aravinda Kar
CREOL, The College of Optics and Photonics, University of Central Florida 3 , Orlando, Florida 32816
6 shared publications - Chandraika (John) Sugrim
Naval Air Warfare Center, Aircraft Division 4 , Patuxent River, Maryland 20670
5 shared publications - Ranganathan Kumar
Department of Mechanical and Aerospace Engineering, University of Central Florida 2 , Orlando, Florida 32816
5 shared publications - Gunjan Kulkarni
Department of Electrical and Computer Engineering, University of Central Florida 1 , Orlando, Florida 32816
3 shared publications - Francois Chenard
IRflex Corporation 3 , 300 Ringgold Industrial Parkway, Danville, Virginia 24540
2 shared publications Ranganathan Kumar
Department of Mechanical and Aerospace Engineering, University of Central Florida 4 , Orlando, Florida 32816
2 shared publications
Latest Publications
- 14 August 2026
- Published by Optica Publishing Group in Optical Materials Express
- Vol. 16 (9) , 2975
Simultaneous Raman and photoluminescence spectroscopy for mapping of dopant distributions in optical fiber preforms and fibers
We demonstrate an entirely optical, co-registered Raman-photoluminescence (PL) spectroscopy method for quantitative mapping of dopant distributions in prepared silica-based optical fiber preform cross sections and fibers. We utilize 532 nm excitation for simultaneous Raman-PL signal acquisition. For Yb-doped alumino-phospho-silicate preforms and fibers, profiles obtained from the Raman P = O vibration band and Yb-related PL emission band closely match P and Yb distributions measured by electron probe microanalysis (EPMA) and energy-dispersive X-ray (EDX) spectroscopy. Calibrations against EPMA/EDX measurements on the corresponding samples enable absolute dopant-concentration scales and direct conversion of optical signals into quantitative profiles. Measured refractive-index profiles show excellent agreement with Raman-PL results, validating the combined approach as an optical diagnostic for prepared preform cross sections and drawn fibers.
- 14 August 2026
- Published by Optica Publishing Group in Optical Materials Express
- Vol. 16 (9) , 2975
Simultaneous Raman and photoluminescence spectroscopy for mapping of dopant distributions in optical fiber preforms and fibers
We demonstrate an entirely optical, co-registered Raman-photoluminescence (PL) spectroscopy method for quantitative mapping of dopant distributions in prepared silica-based optical fiber preform cross sections and fibers. We utilize 532 nm excitation for simultaneous Raman-PL signal acquisition. For Yb-doped alumino-phospho-silicate preforms and fibers, profiles obtained from the Raman P = O vibration band and Yb-related PL emission band closely match P and Yb distributions measured by electron probe microanalysis (EPMA) and energy-dispersive X-ray (EDX) spectroscopy. Calibrations against EPMA/EDX measurements on the corresponding samples enable absolute dopant-concentration scales and direct conversion of optical signals into quantitative profiles. Measured refractive-index profiles show excellent agreement with Raman-PL results, validating the combined approach as an optical diagnostic for prepared preform cross sections and drawn fibers.
- 1 August 2026
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 38 (3)
Laser-assisted additive manufacturing for copper nanoparticle metallization in photovoltaics
Copper is increasingly considered for next-generation microarchitectured solar cells due to its unique photovoltaic and cost characteristics. Laser-assisted additive manufacturing enables cost-effective, scalable route for copper metallization with localized energy input, and minimal thermal damage to underlying device layers. In this study, high concentrations of copper nanoparticle suspensions (75–85 wt. %) were prepared and deposited on indium tin oxide-coated silicon heterojunction solar cells, followed by a two-step CO2 laser process consisting of drying and selective sintering. A tailored thermal model, incorporating the thermophysical and optical properties of each material, was used to guide the optimal laser conditions for both steps. Processing and structure property relationships were evaluated through SEM imaging and four-point-probe measurements. Laser-sintered lines showed improved densification and conductivity compared with thermally annealed counterparts, indicating that localized laser energy enables more effective neck growth and reduced lateral spreading. The results highlight a promising pathway toward high-precision, low-thermal damage metallization for advanced solar-cell architectures and provide a foundation for further optimization of laser-based cooper processing.
- 1 August 2026
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 38 (3)
Laser-assisted additive manufacturing for copper nanoparticle metallization in photovoltaics
Copper is increasingly considered for next-generation microarchitectured solar cells due to its unique photovoltaic and cost characteristics. Laser-assisted additive manufacturing enables cost-effective, scalable route for copper metallization with localized energy input, and minimal thermal damage to underlying device layers. In this study, high concentrations of copper nanoparticle suspensions (75–85 wt. %) were prepared and deposited on indium tin oxide-coated silicon heterojunction solar cells, followed by a two-step CO2 laser process consisting of drying and selective sintering. A tailored thermal model, incorporating the thermophysical and optical properties of each material, was used to guide the optimal laser conditions for both steps. Processing and structure property relationships were evaluated through SEM imaging and four-point-probe measurements. Laser-sintered lines showed improved densification and conductivity compared with thermally annealed counterparts, indicating that localized laser energy enables more effective neck growth and reduced lateral spreading. The results highlight a promising pathway toward high-precision, low-thermal damage metallization for advanced solar-cell architectures and provide a foundation for further optimization of laser-based cooper processing.
- Top Cited PapersOpen Access
- 3 September 2025
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 13 (36) , 18597-18630
Two-photon polymerization-assisted 3D laser nanoprinting: from fundamentals to modern applications
Two-photon lithography (2PL) enables high-resolution 3D nanoprinting of complex, functional microdevices. This review examines 2PL fundamentals, resolution and throughput improvements, and emerging applications in various fields.
- 3 September 2025
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 13 (36) , 18597-18630
Top Cited PapersOpen AccessTwo-photon polymerization-assisted 3D laser nanoprinting: from fundamentals to modern applications
Two-photon lithography (2PL) enables high-resolution 3D nanoprinting of complex, functional microdevices. This review examines 2PL fundamentals, resolution and throughput improvements, and emerging applications in various fields.
- Open Access
Laser-Induced Liquid-Phase Boron Doping of 4H-SiC
4H-silicon carbide (4H-SiC) is a cornerstone for next-generation optoelectronic and power devices owing to its unparalleled thermal, electrical, and optical properties. However, its chemical inertness and low dopant diffusivity for most dopants have historically impeded effective doping. This study unveils a transformative laser-assisted boron doping technique for n-type 4H-SiC, employing a pulsed Nd:YAG laser (λ = 1064 nm) with a liquid-phase boron precursor. By leveraging a heat-transfer model to optimize laser process parameters, we achieved dopant incorporation while preserving the crystalline integrity of the substrate. A novel optical characterization framework was developed to probe laser-induced alterations in the optical constants—refraction index () and attenuation index ()—across the MIDIR spectrum (λ = 3–5 µm). The optical properties pre- and post-laser doping were measured using Fourier-transform infrared spectrometry, and the corresponding complex refraction indices were extracted by solving a coupled system of nonlinear equations derived from single- and multi-layer absorption models. These models accounted for the angular dependence in the incident beam, enabling a more accurate determination of and values than conventional normal-incidence methods. Our findings indicate the formation of a boron-acceptor energy level at 0.29 eV above the 4H-SiC valence band, which corresponds to λ = 4.3 µm. This impurity level modulated the optical response of 4H-SiC, revealing a reduction in the refraction index from 2.857 (as-received) to 2.485 (doped) at λ = 4.3 µm. Structural characterization using Raman spectroscopy confirmed the retention of crystalline integrity post-doping, while secondary ion mass spectrometry exhibited a peak boron concentration of 1.29 × 1019 cm−3 and a junction depth of 450 nm. The laser-fabricated p–n junction diode demonstrated a reverse-breakdown voltage of 1668 V. These results validate the efficacy of laser doping in enabling MIDIR tunability through optical modulation and functional device fabrication in 4H-SiC. The absorption models and doping methodology together offer a comprehensive platform for paving the way for transformative advances in optoelectronics and infrared materials engineering.Open AccessLaser-Induced Liquid-Phase Boron Doping of 4H-SiC
4H-silicon carbide (4H-SiC) is a cornerstone for next-generation optoelectronic and power devices owing to its unparalleled thermal, electrical, and optical properties. However, its chemical inertness and low dopant diffusivity for most dopants have historically impeded effective doping. This study unveils a transformative laser-assisted boron doping technique for n-type 4H-SiC, employing a pulsed Nd:YAG laser (λ = 1064 nm) with a liquid-phase boron precursor. By leveraging a heat-transfer model to optimize laser process parameters, we achieved dopant incorporation while preserving the crystalline integrity of the substrate. A novel optical characterization framework was developed to probe laser-induced alterations in the optical constants—refraction index () and attenuation index ()—across the MIDIR spectrum (λ = 3–5 µm). The optical properties pre- and post-laser doping were measured using Fourier-transform infrared spectrometry, and the corresponding complex refraction indices were extracted by solving a coupled system of nonlinear equations derived from single- and multi-layer absorption models. These models accounted for the angular dependence in the incident beam, enabling a more accurate determination of and values than conventional normal-incidence methods. Our findings indicate the formation of a boron-acceptor energy level at 0.29 eV above the 4H-SiC valence band, which corresponds to λ = 4.3 µm. This impurity level modulated the optical response of 4H-SiC, revealing a reduction in the refraction index from 2.857 (as-received) to 2.485 (doped) at λ = 4.3 µm. Structural characterization using Raman spectroscopy confirmed the retention of crystalline integrity post-doping, while secondary ion mass spectrometry exhibited a peak boron concentration of 1.29 × 1019 cm−3 and a junction depth of 450 nm. The laser-fabricated p–n junction diode demonstrated a reverse-breakdown voltage of 1668 V. These results validate the efficacy of laser doping in enabling MIDIR tunability through optical modulation and functional device fabrication in 4H-SiC. The absorption models and doping methodology together offer a comprehensive platform for paving the way for transformative advances in optoelectronics and infrared materials engineering. - 1 May 2025
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 37 (2)
CO2 laser-assisted deposition of multilayer homogeneous TiO2/SiO2 nanocomposite films with varying refraction and absorption indices
Multilayer thin films of sintered TiO2 and SiO2 nanoparticles (NPs) are frequently used as antireflection coatings (ARCs) due to their excellent optical properties. We report CO2 laser-assisted deposition, i.e., spin-coating of wet films followed by laser processing, of multilayer transparent films using a mixture of TiO2 and SiO2 NPs. A simple heat transfer model is presented to optimize laser processing parameters for effective sintering while preventing the anatase-to-rutile phase transformation of TiO2. To minimize the reflectance, and enhance the transmittance, an ARC model is utilized to select the film material and determine the thickness of each layer. UV/Vis spectrophotometry was carried out to measure the optical reflectance. UV/Vis/NIR spectrophotometry analysis shows that the sintered homogenous films are highly transparent, with an average transmittance of above 90% in a certain range of wavelength. Due to the porosity of the films, an effective medium model was utilized to determine the optical constants, i.e., the refraction and absorption indices, of just the solid phase, which is formed by the sintered NPs in the nanocomposite TiO2/SiO2 coatings. The results demonstrate that the effective refraction or absorption index can be smaller than that of the solid phase. The effect of TiO2 and SiO2 concentrations on the optical properties of multilayer homogenous TiO2/SiO2 coatings is also investigated. The effect of laser processing on the microstructural properties was investigated using SEM and XRD techniques. Optical profilometry was conducted to determine the thickness of the sintered films.
- 1 May 2025
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 37 (2)
CO2 laser-assisted deposition of multilayer homogeneous TiO2/SiO2 nanocomposite films with varying refraction and absorption indices
Multilayer thin films of sintered TiO2 and SiO2 nanoparticles (NPs) are frequently used as antireflection coatings (ARCs) due to their excellent optical properties. We report CO2 laser-assisted deposition, i.e., spin-coating of wet films followed by laser processing, of multilayer transparent films using a mixture of TiO2 and SiO2 NPs. A simple heat transfer model is presented to optimize laser processing parameters for effective sintering while preventing the anatase-to-rutile phase transformation of TiO2. To minimize the reflectance, and enhance the transmittance, an ARC model is utilized to select the film material and determine the thickness of each layer. UV/Vis spectrophotometry was carried out to measure the optical reflectance. UV/Vis/NIR spectrophotometry analysis shows that the sintered homogenous films are highly transparent, with an average transmittance of above 90% in a certain range of wavelength. Due to the porosity of the films, an effective medium model was utilized to determine the optical constants, i.e., the refraction and absorption indices, of just the solid phase, which is formed by the sintered NPs in the nanocomposite TiO2/SiO2 coatings. The results demonstrate that the effective refraction or absorption index can be smaller than that of the solid phase. The effect of TiO2 and SiO2 concentrations on the optical properties of multilayer homogenous TiO2/SiO2 coatings is also investigated. The effect of laser processing on the microstructural properties was investigated using SEM and XRD techniques. Optical profilometry was conducted to determine the thickness of the sintered films.
- Open Access
- 26 March 2024
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 36 (2)
Numerical investigation of laser doping parameters for semi-insulating 4H-SiC substrate
Semi-insulating (SI) 4H-polytype of silicon carbide (SiC) is a highly desirable wide bandgap semiconductor material for various applications in challenging environments owing to its exceptional characteristics such as high melting point, remarkable thermal conductivity, strong breakdown field, and excellent resistance to oxidation. This study investigates the critical laser processing parameters to operate a pulsed UV 355 nm laser to dope high-purity (HP) SI 4H-SiC substrates with boron. The doping process parameters are examined and simulated for this UV laser doping system using a liquid precursor of boron. Boron atoms create a dopant energy level of 0.3eV in the doped HP 4H-SiC substrates. Diffusion of boron atoms into 4H-SiC substrates modifies the hole density at 0.3eV energy level, and causing a variation in the dynamic refraction index, and absorption index. Consequently, the optical properties of boron doped samples, namely, transmittance, reflectance, and absorbance, can be modified. The current simulation reported in this study explains the motivation of UV optical doping strategy to dope SiC substrates. A beam homogenizer was used to control the laser spot used to generate doping process. The advantage of the beam homogenizer is demonstrated by producing flat-top beams with uniform intensity over a certain area defined by the focusing lens choice. A simple theoretical model is used to select the laser processing parameters for doping SiC substrates. These modeled parameters are used to determine the efficient laser processing parameters for our doping experiments.
- 26 March 2024
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 36 (2)
Open AccessNumerical investigation of laser doping parameters for semi-insulating 4H-SiC substrate
Semi-insulating (SI) 4H-polytype of silicon carbide (SiC) is a highly desirable wide bandgap semiconductor material for various applications in challenging environments owing to its exceptional characteristics such as high melting point, remarkable thermal conductivity, strong breakdown field, and excellent resistance to oxidation. This study investigates the critical laser processing parameters to operate a pulsed UV 355 nm laser to dope high-purity (HP) SI 4H-SiC substrates with boron. The doping process parameters are examined and simulated for this UV laser doping system using a liquid precursor of boron. Boron atoms create a dopant energy level of 0.3eV in the doped HP 4H-SiC substrates. Diffusion of boron atoms into 4H-SiC substrates modifies the hole density at 0.3eV energy level, and causing a variation in the dynamic refraction index, and absorption index. Consequently, the optical properties of boron doped samples, namely, transmittance, reflectance, and absorbance, can be modified. The current simulation reported in this study explains the motivation of UV optical doping strategy to dope SiC substrates. A beam homogenizer was used to control the laser spot used to generate doping process. The advantage of the beam homogenizer is demonstrated by producing flat-top beams with uniform intensity over a certain area defined by the focusing lens choice. A simple theoretical model is used to select the laser processing parameters for doping SiC substrates. These modeled parameters are used to determine the efficient laser processing parameters for our doping experiments.
- 8 January 2024
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 36 (1)
Laser doping of n-type 4H-SiC with boron using solution precursor for mid-wave infrared optical properties
Laser doping of n-type 4H-silicon carbide (SiC) semiconductor substrates with boron (B) using a pulsed Nd:YAG laser (λ = 1064 nm) is reported. An aqueous boric acid solution was used as a boron precursor. A simple theoretical heat transfer model was employed to select the laser processing parameters, i.e., laser power and laser-substrate interaction time, and determine the appropriate temperature to dope 4H-SiC substrates. The selected processing parameters ensured that the temperature at the laser-substrate interaction zone was below the SiC peritectic temperature to prevent any crystalline phase transformations in SiC. Fourier-transform infrared spectrometry was conducted to determine the optical properties of both undoped and boron-doped 4H-SiC substrates within the mid-wave infrared (MWIR) wavelength range (3–5 μm). Boron atoms create an acceptor energy level at 0.29 eV above the valence band in the 4H-SiC bandgap, which corresponds to λ = 4.3 μm. Boron-doped 4H-SiC substrate exhibited reduced reflectance and increased absorptance for the MWIR range. An absorption peak at λ = 4.3 μm was detected for the doped substrate. This confirmed the creation of the acceptor energy level in the 4H-SiC bandgap and, thus, doping of 4H-SiC with boron. A notable decrease in the refractive index, i.e., from 2.87 to 2.52, after laser doping of n-type 4H-SiC with boron was achieved.
- 8 January 2024
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 36 (1)
Laser doping of n-type 4H-SiC with boron using solution precursor for mid-wave infrared optical properties
Laser doping of n-type 4H-silicon carbide (SiC) semiconductor substrates with boron (B) using a pulsed Nd:YAG laser (λ = 1064 nm) is reported. An aqueous boric acid solution was used as a boron precursor. A simple theoretical heat transfer model was employed to select the laser processing parameters, i.e., laser power and laser-substrate interaction time, and determine the appropriate temperature to dope 4H-SiC substrates. The selected processing parameters ensured that the temperature at the laser-substrate interaction zone was below the SiC peritectic temperature to prevent any crystalline phase transformations in SiC. Fourier-transform infrared spectrometry was conducted to determine the optical properties of both undoped and boron-doped 4H-SiC substrates within the mid-wave infrared (MWIR) wavelength range (3–5 μm). Boron atoms create an acceptor energy level at 0.29 eV above the valence band in the 4H-SiC bandgap, which corresponds to λ = 4.3 μm. Boron-doped 4H-SiC substrate exhibited reduced reflectance and increased absorptance for the MWIR range. An absorption peak at λ = 4.3 μm was detected for the doped substrate. This confirmed the creation of the acceptor energy level in the 4H-SiC bandgap and, thus, doping of 4H-SiC with boron. A notable decrease in the refractive index, i.e., from 2.87 to 2.52, after laser doping of n-type 4H-SiC with boron was achieved.
- 3 January 2023
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 35 (1) , 012012
CO2 laser-assisted sintering of TiO2 nanoparticles for transparent films
Nanoelectrospray laser deposition (NELD) of nanoparticles (NPs) on various substrates has attracted considerable attention as a fast, cost-effective, and scalable technique for precise control of heating time and zone. In this work, NELD-assisted sintering of titanium dioxide (TiO2) NPs on borosilicate glass and quartz substrates is addressed. A 10.6μm CO2 laser was used for patterning and sintering titania nanoparticles in ambient air. The effects of laser dose and deposition process parameters on the morphological, structural, and optical characteristics of the sintered TiO2 patterns were characterized using optical microscopy, scanning electron microscopy, and x-ray diffraction. The results point out that the anatase phase was preserved after laser sintering, without the appearance of any TiO2 rutile traces. We show that the improvement in the morphological properties of TiO2 patterns is due to the laser sintering of a dense layer of ceramic with enhanced interconnectivity and connection between single nanoparticles. A theoretical model was developed to select the temperature required to sinter TiO2 nanoparticles and to correlate it with the laser power and scanning speed to prevent cracking on the substrate and sintered nanoparticles and also to get transparent TiO2 films. An optical transmittance of ∼91% was achieved. The experimental data were in accordance with the theoretical model, predicting the success of the model.
- 3 January 2023
- Published by Laser Institute of America in Journal of Laser Applications
- Vol. 35 (1) , 012012
CO2 laser-assisted sintering of TiO2 nanoparticles for transparent films
Nanoelectrospray laser deposition (NELD) of nanoparticles (NPs) on various substrates has attracted considerable attention as a fast, cost-effective, and scalable technique for precise control of heating time and zone. In this work, NELD-assisted sintering of titanium dioxide (TiO2) NPs on borosilicate glass and quartz substrates is addressed. A 10.6μm CO2 laser was used for patterning and sintering titania nanoparticles in ambient air. The effects of laser dose and deposition process parameters on the morphological, structural, and optical characteristics of the sintered TiO2 patterns were characterized using optical microscopy, scanning electron microscopy, and x-ray diffraction. The results point out that the anatase phase was preserved after laser sintering, without the appearance of any TiO2 rutile traces. We show that the improvement in the morphological properties of TiO2 patterns is due to the laser sintering of a dense layer of ceramic with enhanced interconnectivity and connection between single nanoparticles. A theoretical model was developed to select the temperature required to sinter TiO2 nanoparticles and to correlate it with the laser power and scanning speed to prevent cracking on the substrate and sintered nanoparticles and also to get transparent TiO2 films. An optical transmittance of ∼91% was achieved. The experimental data were in accordance with the theoretical model, predicting the success of the model.
- 1 September 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-2
3D Laser Deposition of Inorganic Transparent Materials for Advanced Optics
A novel Additive Manufacturing (AM) process is presented for depositing inorganic glasses with sufficient quality and precision for fused multi-component and gradient index (GRIN) optics. The CO 2 laser is used to evaporate and sinter the suspension of oxide nanopowder and to produce inorganic glasses.
- 1 September 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-2
3D Laser Deposition of Inorganic Transparent Materials for Advanced Optics
A novel Additive Manufacturing (AM) process is presented for depositing inorganic glasses with sufficient quality and precision for fused multi-component and gradient index (GRIN) optics. The CO 2 laser is used to evaporate and sinter the suspension of oxide nanopowder and to produce inorganic glasses.