Ji-Hwan Kim
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Ji-Hwan Kim has a total of 13 co-authors. Here are the top co-authors by number of shared publications:
- Gi-Chung Kwon
Kwangwoon University
2 shared publications - Gi-Won Shin
Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea
2 shared publications - In-Young Bang
Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea
2 shared publications - Jae-Hyeon Kim
Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea
2 shared publications - Woo-Jae Kim
Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea
2 shared publications - Hee-Tae Kwon
Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea
1 shared publication
Latest Publications
- Open Access
- 17 January 2024
- Published by MDPI AG in Nanomaterials
- Vol. 14 (2) , 209
Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO2 at CF4/H2/Ar Plasma
This study investigated the effect of temperature on the aspect-ratio etching of SiO2 in CF4/H2/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in higher etch rates and aspect ratios for SiO2. However, the plasma property was constant with the chuck temperature, indicated by the line intensity ratio from optical emission spectroscopy monitoring of the plasma. The variables obtained from the characterization of the etched profile for the 200 nm trench after etching were analyzed as a function of temperature. A reduction in the necking ratio affected the etch rate and aspect ratio of SiO2. The etching mechanism of the aspect ratio etching of SiO2 was discussed based on the results of the surface composition at necking via energy-dispersive X-ray spectroscopy with temperature. The results suggested that the neutral species reaching the etch front of SiO2 had a low sticking coefficient. The bowing ratio decreased with lowering temperature, indicating the presence of directional ions during etching. Therefore, a lower temperature for the aspect ratio etching of SiO2 could achieve a faster etch rate and a higher aspect ratio of SiO2 via the reduction of necking than higher temperatures.
- 17 January 2024
- Published by MDPI AG in Nanomaterials
- Vol. 14 (2) , 209
Open AccessNecking Reduction at Low Temperature in Aspect Ratio Etching of SiO2 at CF4/H2/Ar Plasma
This study investigated the effect of temperature on the aspect-ratio etching of SiO2 in CF4/H2/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in higher etch rates and aspect ratios for SiO2. However, the plasma property was constant with the chuck temperature, indicated by the line intensity ratio from optical emission spectroscopy monitoring of the plasma. The variables obtained from the characterization of the etched profile for the 200 nm trench after etching were analyzed as a function of temperature. A reduction in the necking ratio affected the etch rate and aspect ratio of SiO2. The etching mechanism of the aspect ratio etching of SiO2 was discussed based on the results of the surface composition at necking via energy-dispersive X-ray spectroscopy with temperature. The results suggested that the neutral species reaching the etch front of SiO2 had a low sticking coefficient. The bowing ratio decreased with lowering temperature, indicating the presence of directional ions during etching. Therefore, a lower temperature for the aspect ratio etching of SiO2 could achieve a faster etch rate and a higher aspect ratio of SiO2 via the reduction of necking than higher temperatures.
- Open Access
Correlation between Density of Reentry Plasma and Frequency of Attenuated Electromagnetic Signals Based on Laboratory Measurements
Upon reentering the Earth’s atmosphere from space, a reentry vehicle becomes enshrouded in an ionization layer. This layer is known as the reentry plasma sheath and is caused by aerodynamic heating. Owing to the oscillation of charged particles in the reentry plasma sheath, the electromagnetic waves for communication between the vehicle and ground are attenuated. Analysis of the plasma density and attenuation of electromagnetic waves in a reentry plasma environment would require experimentation in an environment in which an actual aircraft reenters the atmosphere. Alternatively, an experiment in a large-scale plasma wind tunnel would be necessary. Unfortunately, these experiments would be extremely costly. Therefore, in this study, the reentry plasma was reproduced at laboratory scale using the hot refractory anode vacuum arc (HRAVA) method. In addition, the pressure in the vacuum chamber was used as a variable to probe the characteristics of the reentry plasma according to the altitude. The plasma density and attenuation of electromagnetic waves propagating through the plasma medium were measured using heterodyne interferometry and reflectometry capable of frequency analysis in the range of 10−35 GHz. The results confirmed that the plasma density and attenuation of the electromagnetic waves increased as the pressure in the vacuum chamber increased.
Open AccessCorrelation between Density of Reentry Plasma and Frequency of Attenuated Electromagnetic Signals Based on Laboratory Measurements
Upon reentering the Earth’s atmosphere from space, a reentry vehicle becomes enshrouded in an ionization layer. This layer is known as the reentry plasma sheath and is caused by aerodynamic heating. Owing to the oscillation of charged particles in the reentry plasma sheath, the electromagnetic waves for communication between the vehicle and ground are attenuated. Analysis of the plasma density and attenuation of electromagnetic waves in a reentry plasma environment would require experimentation in an environment in which an actual aircraft reenters the atmosphere. Alternatively, an experiment in a large-scale plasma wind tunnel would be necessary. Unfortunately, these experiments would be extremely costly. Therefore, in this study, the reentry plasma was reproduced at laboratory scale using the hot refractory anode vacuum arc (HRAVA) method. In addition, the pressure in the vacuum chamber was used as a variable to probe the characteristics of the reentry plasma according to the altitude. The plasma density and attenuation of electromagnetic waves propagating through the plasma medium were measured using heterodyne interferometry and reflectometry capable of frequency analysis in the range of 10−35 GHz. The results confirmed that the plasma density and attenuation of the electromagnetic waves increased as the pressure in the vacuum chamber increased.