Fedor Meshchaninov
Research Subjects
Research Interests
Fedor Meshchaninov has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
- Dmitry Mizginov
Laboratory for the Study of Neuromorphic Systems, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
1 shared publication - Dmitry Zhevnenko
Laboratory for the Study of Neuromorphic Systems, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
1 shared publication - Evgeniy Sergeevich Gornev
Moscow Institute of Physics and Technology, Moscow, Russia
1 shared publication - Oleg Alexandrovich Telminov
Moscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny, 141701 Moscow, Russia
1 shared publication - Sergey Yanovich
Laboratory for the Study of Neuromorphic Systems, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia
1 shared publication
Latest Publications
- Open Access
Investigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor
The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible Ni/Si3N4/SiO2/p+-Si samples. We approximated volt-ampere characteristics (VAC) at different temperatures using the general form of the spatial charge-limiting current (SCLC) equation assuming exponential and Gaussian trap distribution within the band gap of Si3N4. Our approximation demonstrated better experimental data matching compared to previous work, where the approximation was based on the uniform trap distribution law. Further, we performed another additional sample measurement set of the samples to evaluate the parameters of the low-resistance state (LRS) variations at different temperatures. Analysis of these measurements allowed us to estimate the temperatures at which the samples will retain LRS for 10 years.
Open AccessInvestigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor
The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible Ni/Si3N4/SiO2/p+-Si samples. We approximated volt-ampere characteristics (VAC) at different temperatures using the general form of the spatial charge-limiting current (SCLC) equation assuming exponential and Gaussian trap distribution within the band gap of Si3N4. Our approximation demonstrated better experimental data matching compared to previous work, where the approximation was based on the uniform trap distribution law. Further, we performed another additional sample measurement set of the samples to evaluate the parameters of the low-resistance state (LRS) variations at different temperatures. Analysis of these measurements allowed us to estimate the temperatures at which the samples will retain LRS for 10 years.