Sining Lv

With the demand for high-safety, high-integration, and lightweight micro- and nano-electronic components, an MEMS electromagnetic energy-releasing component was innovatively designed based on the corona discharge theory. The device subverted the traditional device-level protection method for electromagnetic energy, realizing the innovation of adding a complex circuit system to the integrated chip through micro-nanometer processing technology and enhancing the chip’s size from the centimeter level to the micron level. In this paper, the working performance of the MEMS electromagnetic energy-releasing component was verified through a combination of a simulation, a static experiment, and a dynamic test, and a characterization test of the tested MEMS electromagnetic energy-releasing component was carried out to thoroughly analyze the effect of the MEMS electromagnetic energy-releasing component. The results showed that after the strong electromagnetic pulse injection, the pulse breakdown voltage of the MEMS electromagnetic energy-releasing component increased exponentially in terms of the pulse injection voltage, and the residual pulse current decreased significantly from one-third to one-half of the original, representing a significant protective effect. In a DC environment, the breakdown voltage of the needle–needle structure of the MEMS electromagnetic energy-releasing component was 144 V, and the on-time was about 0.5 ms.

With the aim of achieving the combat technical requirements of super-quick (SQ) initiation and reliable self-destruction (SD) of a small-caliber projectile fuze, this paper describes a high-functional-density integrated (HFDI) inertial switch based on the “ON-OFF” state transition (i.e., almost no terminal ballistic motion). The reliable state switching of the HFDI inertial switch is studied via elastic–plastic mechanics and verified via both simulations and experiments. The theoretical and simulation results indicate that the designed switch can achieve the “OFF-ON” state transition in the internal ballistic system, and the switch can achieve the “ON-OFF” state transition in the simulated terminal ballistic system within 8 μs or complete the “ON-OFF” state transition as the rotary speed sharply decreases. The experimental results based on the anti-target method show the switch achieves the “ON-OFF” state transition on the μs scale, which is consistent with the simulation results. Compared with the switches currently used in small-caliber projectile fuzes, the HFDI inertial switch integrates more functions and reduces the height by about 44%.

A low-driving energy and bistable recoverable MEMS safety and arming device (S&A), based on microcasting technology and deep silicon etching technology, is proposed to meet safety system requirements. A force–electromagnetic combination solution is constructed for the Si MEMS S&A, with parameters and strength verified, ultimately achieving an S&A size of (13 × 13 × 0.4) mm. Additionally, a low-driving energy U-shaped electromagnetic coil (USEC) model is designed using microcasting technology, and an electrical–magnetic–mechanical coupling mathematical model is established to explore the relationship between design parameters and driving capacity and reliability. With a driving power of 8 V/0.5 A, the model achieves a stable electromagnetic driving force of 15 mN with a travel distance of 0.5 mm. Finally, the fabrication and testing of the USEC and S&A are carried out, with driving capability and S&A disarming ability tests conducted to verify the feasibility of the system design. Compared to the existing S&A, this scheme has the advantages of low-driving energy, recoverability, fast response speed, and strong adaptability.

Information self-destruction devices represent the last protective net available to realize information security. The self-destruction device proposed here can generate GPa-level detonation waves through the explosion of energetic materials and these waves can cause irreversible damage to information storage chips. A self-destruction model consisting of three types of nichrome (Ni-Cr) bridge initiators with copper azide explosive elements was first established. The output energy of the self-destruction device and the electrical explosion delay time were obtained using an electrical explosion test system. The relationships between the different copper azide dosages and the assembly gap between the explosive and the target chip with the detonation wave pressure were obtained using LS-DYNA software. The detonation wave pressure can reach 3.4 GPa when the dosage is 0.4 mg and the assembly gap is 0.1 mm, and this pressure can cause damage to the target chip. The response time of the energetic micro self-destruction device was subsequently measured to be 23.65 μs using an optical probe. In summary, the micro-self-destruction device proposed in this paper offers advantages that include low structural size, fast self-destruction response times, and high energy-conversion ability, and it has strong application prospects in the information security protection field.

The physical self-destruction of an information storage chip (ISC) driven by a detonation wave generated using energetic materials is an important method to ensure the security of key core information. To solve the related problems of high electrostatic sensitivity, poor overcurrent capability, and easy erroneous triggering, a bistable off-on actuator (BO-OA)-based energetic material information self-destruction microsystem is proposed based on a fusible alloy. First, the BO-OA model based on the fusible alloy is constructed. By performing a finite element numerical analysis and experimenting, the response time of the Bi-Sn alloy with a continuous temperature rise from 22°C to 138°C is obtained. Second, a model of the energetic material dose and detonation wave transmission in an air domain is constructed. An analysis using LS-DYNA software indicates that copper azide can produce GPa-level stress waves in a millimeter-level air domain to realize ISC physical self-destruction. Finally, through bulk silicon processing and in situ reaction of the energetic materials, self-destruction module preparation and functional integration are realized. Experiments and simulations show that when driven by a 12 V electromotive force, the BO-OA reaches the fusible alloy melting point of 138°C within 320 μs, and can realize electrical conduction within 33 μs. 0.45 mg of copper azide can generate a 3.27 GPa detonation wave within 5.9 μs at 0.3 mm in the air domain to realize the physical self-destruction of the ISC. This scheme can greatly improve the safety of the energetic materials and provides strong practical value for information self-destruction.

A microelectromechanical systems (MEMS) solid-state logic control chip with three layers—diversion layer, control layer, and substrate layer—is designed to satisfy fuse miniaturization and integration requirements. A mathematical model is established according to the heat conduction equation, and the limit conditions of different structures are presented. The finite element multi-physical field simulation method is used to simulate the size and the action voltage of the diversion layer of the control chip. Based on the surface silicon process, fuse processing, and testing with the MEMS solid-state fuse-logic control chip, a diversion layer constant current, maximum current resistance test, and a control layer of different bridge area sizes, the bridge area size is 200 × 30 μm, and the minimum electrical explosion voltage is 23.6 V. The theoretical calculation results at 20 V and 100 μF demonstrate that the capacitor energy is insufficient to support the complete vaporization of the bridge area, but can be partially vaporized, consistent with the experimental results.

Indium tin oxide (ITO) is a functional material with great transparency, machinability, electrical conductivity and thermo–sensitivity. Based on its excellent thermoelectric performance, we designed and fabricated a multilayer transparent microfluidic chip with multiple sets of on–chip heating, local temperature measurement and positive on–chip cooling function units. Temperature control plays a significant role in microfluidic approaches, especially in the devices that are designed for bioengineering, chemical synthesis and disease detection. The transparency of the chip contributes to achieve the real–time observation of fluid flow and optical detection. The chip consists of a temperature control layer made with an etched ITO deposited glass, a PDMS (polydimethylsiloxane) fluid layer, a PDMS cooling and flow control layer. The performances of the ITO on–chip microheaters, ITO on–chip temperature sensors and two coolants were tested and analyzed in different working conditions. The positive on–chip heating and cooling were proved to be area-specific under a large temperature–regulating range. This PDMS–ITO–glass based chip could be applied to both temporal and spatial stable temperature–regulating principles for various purposes.

Detonation waves released by energetic materials provide an important means of physical self-destruction (Psd) for information storage chips (ISCs) in the information insurance field and offer advantages that include a rapid response and low driving energy. The high electrical sensitivity of energetic materials means that they are easily triggered by leakage currents and electrostatic forces. Therefore, a Psd module based on a graphene-based insurance actuator heterogeneously integrated with energetic materials is proposed. First, the force–balance relation between the electrostatic van der Waals force and the elastic recovery force of the insurance actuator’s graphene electrode is established to realize physical isolation and an electrical interconnection between the energetic materials and the peripheral electrical systems. Second, a numerical analysis of the detonation wave stress of the energetic materials in the air domain is performed, and the copper azide dosage required to achieve reliable ISC Psd is obtained. Third, the insurance actuator is prepared via graphene thin film processing and copper azide is prepared via an in situ reaction. The experimental results show that the energetic materials proposed can release physical isolation within 14 μs and can achieve ISC Psd under the application of a voltage signal (4.4–4.65 V). Copper azide (0.45–0.52 mg) can achieve physical damage over an ISC area (23.37–35.84 mm²) within an assembly gap (0.05–0.25 mm) between copper azide and ISC. The proposed method has high applicability for information insurance.