ASAnanthu P. Surendran

Ananthu P. Surendran

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Ananthu P. Surendran has a total of 12 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Open Access

    Quantum confinement and coherent transport in ultrathin ${\mathbf {{{Bi}_{2}}}\mathbf {{Se}_{3}}}$ nanoribbons

    by Kiryl Niherysh, Xavier Palermo, Ananthu P. Surendran, Alexei Kalaboukhov, Raitis Sondors, Jana Andzane, Donats Erts, Thilo Bauch, Floriana Lombardi

    In recent years much progress has been made in realizing topological insulator (TI) nanostructures where the reduced dimensions should help to diminish the contributions from bulk carriers and enhance quantum confinement. Though nm thick 3D-TI nanoribbons exhibiting topological properties are still difficult to reproducibly synthesize. Here we demonstrate the growth of ultrathin $${\mathbf {{{Bi}_{2}}}\mathbf {{Se}_{3}}}$$ nanoribbons by a simple catalyst-free physical-vapour deposition, where the tuning of the material evaporation time plays a crucial role in determining the ultimate thickness of the nanoribbons. Magnetotransport and Hall effect measurements show that at thicknesses close to 10 nm the transport features are affected by Altshuler-Aronov-Spivak like coherent orbits at low magnetic fields, while Shubnikov-de Haas oscillations take over at high fields. The observed phenomena originate from the topological surface states and dominate the nanoribbon transport. Ultrathin nanoribbons also show pronounced conductance oscillations as a function of gate voltage, that can be attributed to ballistic transport and quantized sub-bands. The results highlight the importance of material growth to exploit the unique properties of topological surface states, establishing 3D-TI nanoribbons as a promising platform for a variety of novel applications.


  • Open Access

    Current-phase relation of a short multi-mode Bi2Se3 topological insulator nanoribbon Josephson junction with ballistic transport modes

    by Ananthu P Surendran, Domenico Montemurro, Gunta Kunakova, Xavier Palermo, Kiryl Niherysh, Edoardo Trabaldo, Dmitry S Golubev, Jana Andzane, Donats Erts, Floriana Lombardi, et al.

    We used the asymmetric superconducting quantum interference device (SQUID) technique to extract the current phase relation (CPR) of a Josephson junction with a 3D-topological insulator (3D-TI) Bi2Se3 nanobelt as the barrier. The obtained CPR shows deviations from the standard sinusoidal CPR with a pronounced forward skewness. At temperatures below 200 mK, the junction skewness values are above the zero temperature limit for short diffusive junctions. Fitting of the extracted CPR shows that most of the supercurrent is carried by ballistic topological surface states (TSSs), with a small contribution of diffusive channels primarily due to the bulk. These findings are instrumental in engineering devices that can fully exploit the properties of the topologically protected surface states of 3D TIs.


  • Open Access

    Current-phase relation of a short multi-mode Bi2Se3 topological insulator nanoribbon Josephson junction with ballistic transport modes

    by Ananthu P. Surendran, Domenico Montemurro, Gunta Kunakova, Xavier Palermo, Kiryl Niherysh, Edoardo Trabaldo, Dmitry Golubev, Jana Andzane, Donats Erts, Floriana Lombardi, et al.

    We used the asymmetric superconducting quantum interference device (SQUID) technique to extract the current phase relation (CPR) of a Josephson junction with a 3D-topological insulator (TI) Bi2Se3 nanobelt as the barrier. The obtained CPR shows deviations from the standard sinusoidal CPR with a pronounced forward skewness. At temperatures below 200 mK, the junction skewness values are above the zero temperature limit for short diffusive junctions. Fitting of the extracted CPR shows that most of the supercurrent is carried by ballistic topological surface states (TSSs), with a small contribution of diffusive channels primarily due to the bulk. These findings are instrumental in engineering devices that can fully exploit the properties of the topologically protected surface states of 3D TIs.