Shihao Wu
Research Subjects
Research Interests
Shihao Wu has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Fengyu Liu
ShanghaiTech University
1 shared publication - Junmin Wu
Changzhou Bawnovation Microelectronics Co., Ltd., Changzhou 213166, China
1 shared publication - Tian Xu
School of Microelectronics, Shanghai University, Shanghai 200444, China
1 shared publication - Xuan Huang
Changzhou Bawnovation Microelectronics Co., Ltd., Changzhou 213166, China
1 shared publication - Xuankai Xu
School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
1 shared publication - Yali Zou
School of Microelectronics, Shanghai University, Shanghai 200444, China
1 shared publication
Latest Publications
- Open Access
- 28 February 2023
- Published by MDPI AG in Micromachines
- Vol. 14 (3) , 583
The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss
When AlN thin films are deposited directly on the high-resistance silicon (HR-Si) substrate, a conductive layer will be formed on the HR-Si surface. This phenomenon is called the parasitic surface conduction (PSC) effect. The presence of the PSC effect will increase the power consumption of electronic components. Therefore, it is necessary to reduce the PSC effect. In prior technology, the polysilicon layer is usually used as the trap-rich layer to reduce the PSC effect. Experiments show that compared to AlN films deposited directly on HR-Si, the AlN substrates with polysilicon introduced on HR-Si have less radio frequency (RF) loss. To verify the effect of polysilicon on RF loss, polysilicon films of three different thicknesses and several different roughnesses were introduced. The results show that the thickness of the polysilicon will affect the RF loss, while the roughness has almost no effect on it. The polysilicon trap-rich layer can reduce the RF loss, which gradually becomes smaller as the polysilicon thickness increases.
- 28 February 2023
- Published by MDPI AG in Micromachines
- Vol. 14 (3) , 583
Open AccessThe Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss
When AlN thin films are deposited directly on the high-resistance silicon (HR-Si) substrate, a conductive layer will be formed on the HR-Si surface. This phenomenon is called the parasitic surface conduction (PSC) effect. The presence of the PSC effect will increase the power consumption of electronic components. Therefore, it is necessary to reduce the PSC effect. In prior technology, the polysilicon layer is usually used as the trap-rich layer to reduce the PSC effect. Experiments show that compared to AlN films deposited directly on HR-Si, the AlN substrates with polysilicon introduced on HR-Si have less radio frequency (RF) loss. To verify the effect of polysilicon on RF loss, polysilicon films of three different thicknesses and several different roughnesses were introduced. The results show that the thickness of the polysilicon will affect the RF loss, while the roughness has almost no effect on it. The polysilicon trap-rich layer can reduce the RF loss, which gradually becomes smaller as the polysilicon thickness increases.