Bixin Li

Bixin Li

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Bixin Li has a total of 19 co-authors. Here are the top co-authors by number of shared publications:

  • Bin Du

    School of Materials Science and Engineering, Xi’an Polytechnic University, Xi’an 710048, China

    4 shared publications
  • Jintao Ma

    School of Materials Science and Engineering, Xi’an Polytechnic University, Xi’an 710048, China

    2 shared publications
  • Bo Sun

    Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China

    1 shared publication
  • Dingwei Wang

    School of Materials Science and Engineering, Xi’an Polytechnic University, Xi’an 710048, China

    1 shared publication
  • Fei Xia

    Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China

    1 shared publication
  • Hao Yin

    Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China

    1 shared publication

Latest Publications

  • Interconnection layers for tandem perovskite solar cells: research advances and optimization strategies

    by Bixin Li, Dingwei Wang, Weidan Gu, Bin Du

    This paper systematically reviews the material systems and key functions of ICLs in tandem perovskite solar cells, which build a systematic theoretical framework for ICL research.

  • Recent progress of buried interface in high-efficiency and stable perovskite solar cells

    by Bin Du, Jintao Ma, Hongkun Xiang, Yanlong Wang, Bixin Li

    Perovskite solar cells (PSCs) have been rapidly developed in recent years due to their excellent photovoltaic performance, which has been actively promoted by many researchers. However, interfacial non-radiative compounding hinders further improvement of their device performance. Buried interface modification strategies can minimize the non-radiative compounding within the interface, resulting in highly efficient and stable PSCs. In this review, we summarize the recent advances in the development of multiple classes of materials applied to buried interface engineering for the preparation of highly efficient and stable PSCs, including the development of organic, inorganic, and polymeric materials. The important role of buried interfaces in regulating energy alignment, passivating surface defects, modulating morphology, etc. have been discussed. Furthermore, we propose strategies to reduce nonradiative composites at interfaces. Finally, potential developments and challenges of buried interfaces for high performance stabilized PSCs are presented.


  • Progress and challenges: a review of ionic liquid treatment for efficient and stable perovskite solar cells

    by Jintao Ma, Lin Wang, Kun He, Yan Sun, Bixin Li, Qiangli Zhao, Bin Du

    While perovskite solar cells (PSCs) have achieved remarkable power conversion efficiencies (PCEs) exceeding 26.1%, significant challenges remain in enhancing their efficiency and stability for commercial viability.


  • Open Access

    Defect Passivation Scheme toward High-Performance Halide Perovskite Solar Cells

    by Bin Du, Kun He, Xiaoliang Zhao, Bixin Li

    Organic-inorganic halide perovskite solar cells (PSCs) have attracted much attention in recent years due to their simple manufacturing process, low cost, and high efficiency. So far, all efficient organic-inorganic halide PSCs are mainly made of polycrystalline perovskite films. There are transmission barriers and high-density defects on the surface, interface, and grain boundary of the films. Among them, the deep-level traps caused by specific charged defects are the main non-radiative recombination centers, which is the most important factor in limiting the photoelectric conversion efficiency of PSCs devices to the Shockley-Queisser (S-Q) theoretical efficiency limit. Therefore, it is imperative to select appropriate passivation materials and passivation strategies to effectively eliminate defects in perovskite films to improve their photovoltaic performance and stability. There are various passivation strategies for different components of PSCs, including interface engineering, additive engineering, antisolvent engineering, dopant engineering, etc. In this review, we summarize a large number of defect passivation work to illustrate the latest progress of different types of passivators in regulating the morphology, grain boundary, grain size, charge recombination, and defect density of states of perovskite films. In addition, we discuss the inherent defects of key materials in carrier transporting layers and the corresponding passivation strategies to further optimize PSCs components. Finally, some perspectives on the opportunities and challenges of PSCs in future development are highlighted.


  • Robust and Transient Write‐Once‐Read‐Many‐Times Memory Device Based on Hybrid Perovskite Film with Novel Room Temperature Molten Salt Solvent

    by Bixin Li, Hao Yin, Fei Xia, Bo Sun, Shiyang Zhang, Yingdong Xia, Yonghua Chen, Wei Huang

    Organic–inorganic hybrid perovskites (OIHPs) have emerged as a novel class of functional materials with applications in solar cells, photodetectors, light‐emitting diodes, and resistive switching memories. Generally, perovskite films are fabricated with toxic solvents and antisolvent technique under inert atmosphere, which limits the commercial applications of OIHP‐based devices. To address this issue, uniform CH3NH3PbBr3 (MAPbBr3) film is fabricated through a facile one‐step spin‐coating method by directly dissolving perovskite precursor in a room‐temperature molten salt methylammonium acetate under air ambient condition. The nonvolatile resistive switching devices based on MAPbBr3 exhibit robust and reproducible write‐once‐read‐many‐times (WORM) memory properties with a large ON/OFF ratio (106), reliable retention properties (104 s), and somewhat ternary resistive characteristic. The conductive filaments in the perovskite thin film are proposed to induce the electrical conductivity switching. Additionally, the MAPbBr3 films can be dissolved rapidly in deionized water within 5 s, showing the transient characteristics. This work demonstrates a new perspective on the perovskite film fabrication and shows the potential application of MAPbBr3 in transient WORM devices.