Liangyong Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Liangyong Wang has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
Bo Liu
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
1 shared publicationFuxiong Zhang
Semiconductor Manufacturing International Corporation, Shanghai 201203, People’s Republic of China
1 shared publicationSonglin Feng
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
1 shared publicationYanghui Xiang
Semiconductor Manufacturing International Corporation, Shanghai 201203, People’s Republic of China
1 shared publicationZhitang Song
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
1 shared publication
Latest Publications
- 1 January 2010
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 157 (4) , H470-H473
Basic Wet-Etching Solutions for Ge[sub 2]Sb[sub 2]Te[sub 5] Phase Change Material
We report on basic wet-etching solutions for (GST) phase change material. A scanning electronic microscope was used to observe the surface morphology and measure the etching rate. On the basis of the etching results, it was found that the aqueous solutions of 10 vol % plus 25 wt % bases, such as KOH, , and tetramethylammonium hydroxide, resulted in lower etching rates but a much smoother surface than that of common acid solutions. In addition, the etching process could be well controlled. Further X-ray photoelectron spectroscopy study of the etched samples showed that GST, etched by KOH, possessed higher oxidized states than that by , which revealed that the etching process was milder in basic solutions, while the dissolution of GST was more favored in acid environments due to the protonation effect.
- 1 January 2010
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 157 (4) , H470-H473
Basic Wet-Etching Solutions for Ge[sub 2]Sb[sub 2]Te[sub 5] Phase Change Material
We report on basic wet-etching solutions for (GST) phase change material. A scanning electronic microscope was used to observe the surface morphology and measure the etching rate. On the basis of the etching results, it was found that the aqueous solutions of 10 vol % plus 25 wt % bases, such as KOH, , and tetramethylammonium hydroxide, resulted in lower etching rates but a much smoother surface than that of common acid solutions. In addition, the etching process could be well controlled. Further X-ray photoelectron spectroscopy study of the etched samples showed that GST, etched by KOH, possessed higher oxidized states than that by , which revealed that the etching process was milder in basic solutions, while the dissolution of GST was more favored in acid environments due to the protonation effect.