Qian Gao
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Qian Gao has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
- Chennupati Jagadish
The Australian National University
2 shared publications - Jennifer Wong-Leung
Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australia
2 shared publications - Lan Fu
The Australian National University
2 shared publications Li Li
Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
2 shared publications- Philippe Caroff
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
2 shared publications Yanan Guo
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
2 shared publications
Latest Publications
- 6 June 2016
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 16 (7) , 4361-4367
Simultaneous Selective-Area and Vapor–Liquid–Solid Growth of InP Nanowire Arrays
Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III–V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP ⟨111⟩A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.
- 6 June 2016
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 16 (7) , 4361-4367
Simultaneous Selective-Area and Vapor–Liquid–Solid Growth of InP Nanowire Arrays
Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III–V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP ⟨111⟩A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.
- Top Cited Papers
- 15 August 2014
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 14 (9) , 5206-5211
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
- 15 August 2014
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 14 (9) , 5206-5211
Top Cited PapersSelective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.