Ronald A. Coutu

Microelectromechanical systems (MEMS) ohmic contact switches are considered to be a promising candidate for wireless communication applications. The longevity of MEMS switches is directly related to the reliability and performance of microcontacts. In this work, an improved microcontact test fixture with high actuation rates (KHz) and highly precise position control (nm) and force (nN) control was developed. Here, we collected microcontact performance data from initial contact tests (ICT) and microcontact reliability data from cold switched tests (CST). To perform these tests with our test fixture, we fabricated MEMS microcontact test structures with relatively high Young’s modulus electroplated Nickel (Ni)-based, fixed–fixed beam structure with Au/RuO₂ bimetallic microcontacts. These structures were characterized for forces ranging from 200–1000 µN in ICT tests. In a CST test, the tested microcontact survived more than 200 million cycles at a 1 KHz cycle rate, with a stable contact resistance value ranging between 3.8–5.2 Ω. These experiments validate the potentiality of our microcontact test fixture, and will facilitate further investigation on advanced microcontacts to enhance the MEMS switch’s reliability.

The behavior of a sine wave propagated through thin films of aluminum nitride (AlN), aluminum oxide (Al2O3), and tin oxide (SnOx) with engineered buried defect sites may suggest quantum excitation and defect-mediated waveform modulations. Two distinct methods to induce these buried defects, etch pattern defects (EPD) and indentation pattern defects (IPD), were employed to detect these interactions. All the experiments were conducted at room temperature (21 °C) over a frequency range between 5 and 1000 kHz. In addition, EPD and IPD devices were composed of AlN, Al2O3, and SnOx. An inverse relationship between excitation frequency and voltage is observed for all devices. All these devices exhibited a relaxation time ranging between 0.2 and 0.75 µs. Devices without these engineered defect sites preserve the waveform integrity, emphasizing the impact of the buried defect sites. This research focuses on the relationship between defect type, excitation frequency, and voltage to understand the deeper mechanisms at play in these quantum defect-driven wave alterations in AlN, Al2O3, and SnOx thin films.

Thin films with quantum defects are emerging as a potential platform for quantum applications. Quantum defects in some thin films arise due to structural imperfections, such as vacancies or impurities. These defects generate localized electronic states with unique optical and electronic properties. Crystal vacancies or defects that occur when atoms are missing from a crystal lattice can influence a material's quantum properties. In this study, we investigated inexpensive, complementary metal oxide semiconductor (CMOS) compatible materials with quantum defects suitable for room temperature applications. The experiments indicated 5ns, 15ns, and 17ns relaxation times for aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ) or alumina, and tin oxides (SnO _x ), respectively. For all these materials, distinct resonant peaks are observed at approximately 1.1GHz, 1.6GHz, 2.2GHz, and 2.7GHz at room temperature (i.e., 21°C). These peaks exhibit slight frequency shifts, corresponding to known defect locations and thin film material properties. This discovery may lead the way to reliable, cost-effective quantum applications in our daily lives.

Germanium telluride (GeTe) is a chalcogenide phase change material which is nonvolatile and changes its phase from amorphous state to a highly conductive crystalline state at approximately 180–230°C temperature, dropping the material’s resistivity by six orders of magnitude. These temperature-induced states lead to different physical and chemical properties, making it a suitable candidate for optical storage, reconfigurable circuit, high-speed switching, terahertz (THz), and satellite applications. Besides, GeTe-based devices offer complementary metal oxide-semiconductor (CMOS) compatibility and simplified, low-cost fabrication processes. In this chapter, three applications of GeTe will be discussed. They are as follows: (1) how GeTe can be utilized as DC and RF switching material with their high OFF/ON resistivity ratio, (2) how GeTe can contribute to current THz technology as split-ring resonators and modulators, and (3) effect of threshold voltage on GeTe for reconfigurable circuits.

Concrete and asphalt are the primary materials used to construct roadways for motor vehicles, paths for pedestrians and bicyclists, and runways for aircraft. Solar Roadways^®, Inc. (SR) proposed a novel solar pavement technology (i.e., solar road panels (SRP)) as an alternative material and energy source. SR performed load, traction, and impact testing to use SRPs in non-critical applications like parking lots. To use SRP in public roads, engineering tests including freeze/thaw, moisture absorption, heavy vehicle, and shear testing were accomplished on “SR3” prototypes. Testing was performed at Marquette University in the Engineering Materials and Structural Testing Laboratory and the SR Pilot Project area. Moisture absorption and freeze/thaw tests showed “SR3” resistant to extreme weather and moisture environments. Heavy vehicle testing revealed no physical damage to the “SR3” after approximately 989,457 equivalent single axle loads were continuously rolled over a prototype pavement. Shear testing was conducted to investigate “SR3” laminate structure properties. In all cases, electrical failure was defined when “SR3” photovoltaic voltage dropped to zero volts. The maximum shear stress and applied torque for “SR3”’ (S/N’s Paver 1, 002B, 007C, and 004B) were 1756 kPa, 1835 kPa, 1643 kPa, 2023 kPa; and 121.2 kN·m, 131.3 kN·m, 117.6 kN·m, 144.8 kN·m, respectively. In addition, the “SR3” “heartbeat” light emitting diode (LED) remained operational (i.e., indicates computer bus traffic) in all phases of shear testing. Overall, the results show “SR3” prototypes to be robust, resilient, and functional when subjected to “real-world” test conditions.

Liquid Crystals (LCs) are widely used in display devices, electro-optic modulators, and optical switches. A field-induced electrical conductivity modulation in pure liquid crystals is very low which makes it less preferable for direct current (DC) and radio-frequency (RF) switching applications. According to the literature, a conductivity enhancement is possible by nanoparticle doping. Considering this aspect, we reviewed published works focused on an electric field-induced conductivity modulation in carbon nanotube-doped liquid crystal composites (LC-CNT composites). A two to four order of magnitude switching in electrical conductivity is observed by several groups. Both in-plane and out-of-plane device configurations are used. In plane configurations are preferable for micro-device fabrication. In this review article, we discussed published works reporting the elastic and molecular interaction of a carbon nanotube (CNT) with LC molecules, temperature and CNT concentration effects on electrical conductivity, local heating, and phase transition behavior during switching. Reversibility and switching speed are the two most important performance parameters of a switching device. It was found that dual frequency nematic liquid crystals (DFNLC) show a faster switching with a good reversibility, but the switching ratio is only two order of magnitudes. A better way to ensure reversibility with a large switching magnitude is to use two pairs of in-plane electrodes in a cross configuration. For completeness and comparison purposes, we briefly reviewed other nanoparticle- (i.e., Au and Ag) doped LC composite’s conductivity behavior as well. Finally, based on the reported works reviewed in this article on field induced conductivity modulation, we proposed a novel idea of RF switching by LC composite materials. To support the idea, we simulated an LC composite-based RF device considering a simple analytical model. Our RF analysis suggests that a device made with an LC-CNT composite could show an acceptable performance. Several technological challenges needed to be addressed for a physical realization and are also discussed briefly.

In microelectromechanical systems (MEMS) switches, the microcontact is crucial in determining reliability and performance. In the past, actual MEMS devices and atomic force microscopes (AFM)/scanning probe microscopes (SPM)/nanoindentation-based test fixtures have been used to collect relevant microcontact data. In this work, we designed a unique microcontact support structure for improved post-mortem analysis. The effects of contact closure timing on various switching conditions (e.g., cold-switching and hot-switching) was investigated with respect to the test signal. Mechanical contact closing time was found to be approximately 1 us for the contact force ranging from 10–900 μN. On the other hand, for the 1 V and 10 mA circuit condition, electrical contact closing time was about 0.2 ms. The test fixture will be used to characterize contact resistance and force performance and reliability associated with wide range of contact materials and geometries that will facilitate reliable, robust microswitch designs for future direct current (DC) and radio frequency (RF) applications.

Carbon monoxide (CO) is a toxic gas, and environmental pollutant. Its detection and control in residential and industrial environments are necessary in order to avoid potentially severe health problems in humans. In this review paper, we discuss the importance of furthering research in CO sensing technologies for finding the proper material with low-range detection ability in very optimum condition. We build our discussion through the perspective of a cyber-physical system (CPS) modeling framework, because it provides a comprehensive framework to model and develop automated solutions for detection and control of poisonous chemical compounds, such as the CO. The most effective CO sensors, then, can be used in CPS network to provide a pathway for real-time monitoring and control in both industrial and household environment. In this paper, first, we discuss the necessity of CO detection, the proposal of a basic CPS framework for modeling and system development, how the CPS-CO model can be beneficiary to the environment, and a general classification of the various CO detection mechanisms. Next, a broad overview emphasizes the sensitivity, selectivity, response and recovery time, low concentration detection ability, effects of external parameters and other specifications that characterize the performance of the sensing methods proposed so far. We will discuss recent studies reported on the use of metal oxide semiconductor (MOS) sensing technologies for the detection of CO. MOS based micro-sensors play an important role in the measurement and monitoring of various trace amounts of CO gas. These sensors are used to sense CO through changes in their electrical properties. In addition to MOS based sensors, optical sensing methods have recently become popular, due to their increased performance. Hence, a brief overview of newly proposed optical based CO detection methods is provided as well.

Welcome to the Special Topics Section dedicated to the 2016 Holm Conference on Electrical Contacts. This special section contains eight high-quality papers that comprehensively describe the state of the art and potential future directions for topics of great interest to our readers. The Editor-in-Chief (EIC), in consultation with the other EICs, Associate Editors (AEs), and domain experts, selects the topics for the special sections, and a Guest Editor or AE (GE/AE), who is a leading expert in the technical area, then directs the solicitation and peer review of the papers. In cases where the GE/AE is also an author, the EIC is responsible for the peer review to avoid any real or perceived conflicts of interest.