Hsu-Chih Ni
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Hsu-Chih Ni has a total of 36 co-authors. Here are the top co-authors by number of shared publications:
- Jian-Min Zuo
Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, USA
4 shared publications - Axel Hoffmann
Department of Materials Science and Engineering The Grainger College of Engineering Materials Research Laboratory University of Illinois Urbana-Champaign 61801 Urbana Illinois USA
3 shared publications - Jiangchao Qian
Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, USA
2 shared publications - Robert Busch
University of Illinois Urbana-Champaign
2 shared publications Yi Li
Argonne National Laboratory
2 shared publications- A. Chakraborty1 shared publication
Latest Publications
- 11 August 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (8) , 084403
Magnetic anisotropy due to localized structural defects in strained yttrium iron garnet thin films
Yttrium iron garnet (YIG, ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$) thin films are promising material systems for quantum magnonics due to their ultralow magnetic damping and the capability of building on-chip spin wave devices to be coupled with superconducting microwave circuits. However, the default substrate for epitaxial YIG thin-film growth, ${\mathrm{Gd}}_{3}{\mathrm{Ga}}_{5}{\mathrm{O}}_{12}$ (GGG), suffers from strong microwave absorption at cryogenic temperature due to the magnetic moment induced by the rare-earth element Gd. In this work, we study strained epitaxial YIG thin films grown on ${\mathrm{Y}}_{3}{\mathrm{Sc}}_{2}{\mathrm{Ga}}_{3}{\mathrm{O}}_{12}$ (YSGG), a rare-earth-free substrate compatible with cryogenic applications. Using cross-sectional scanning transmission electron microscopy along with strain mapping, we show the existence of spot-shape domain defects in the epitaxial YIG films and their connection with strain and stoichiometry, leading to drastically different magnetic properties such as perpendicular magnetic anisotropy, magnetic hysteresis loop, and magnetic damping. Applying high-resolution orientation mapping, we identify localized lattice rotations as the structural origins of these domains. We hypothesize that these domains are formed by a self-composed off-stoichiometry during the growth of the YIG thin films, as a mechanism to accommodate the relatively large lattice mismatch between YIG and YSGG. By elucidating the structure-property relationship in YIG/YSGG thin films, this work highlights a strain accommodation mechanism in complex oxides and provides guidance for future works on the applications of strained YIG thin films in quantum information.- 11 August 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (8) , 084403
Magnetic anisotropy due to localized structural defects in strained yttrium iron garnet thin films
Yttrium iron garnet (YIG, ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$) thin films are promising material systems for quantum magnonics due to their ultralow magnetic damping and the capability of building on-chip spin wave devices to be coupled with superconducting microwave circuits. However, the default substrate for epitaxial YIG thin-film growth, ${\mathrm{Gd}}_{3}{\mathrm{Ga}}_{5}{\mathrm{O}}_{12}$ (GGG), suffers from strong microwave absorption at cryogenic temperature due to the magnetic moment induced by the rare-earth element Gd. In this work, we study strained epitaxial YIG thin films grown on ${\mathrm{Y}}_{3}{\mathrm{Sc}}_{2}{\mathrm{Ga}}_{3}{\mathrm{O}}_{12}$ (YSGG), a rare-earth-free substrate compatible with cryogenic applications. Using cross-sectional scanning transmission electron microscopy along with strain mapping, we show the existence of spot-shape domain defects in the epitaxial YIG films and their connection with strain and stoichiometry, leading to drastically different magnetic properties such as perpendicular magnetic anisotropy, magnetic hysteresis loop, and magnetic damping. Applying high-resolution orientation mapping, we identify localized lattice rotations as the structural origins of these domains. We hypothesize that these domains are formed by a self-composed off-stoichiometry during the growth of the YIG thin films, as a mechanism to accommodate the relatively large lattice mismatch between YIG and YSGG. By elucidating the structure-property relationship in YIG/YSGG thin films, this work highlights a strain accommodation mechanism in complex oxides and provides guidance for future works on the applications of strained YIG thin films in quantum information.- 27 May 2026
- Published by Springer Nature in Nature
- Vol. 654 (8119) , 652-659
Monolithic three-dimensional integration of silicon transistors
Monolithic, three-dimensional (3D) integrated circuits promise advantages in packing density, energy consumption and interconnectivity bandwidth but require forming high-performance semiconductors and transistors on top tiers under the constraint of a limited thermal budget compatible with back-end-of-line integration1,2. Back-end-of-line-compatible transistors have been built on laser-annealed polycrystalline silicon, metal-oxide semiconductors, carbon nanotubes and two-dimensional chalcogenides3-5. However, their performance and reliability are much inferior to bottom-tier silicon metal-oxide-semiconductor field-effect transistors, which mask most of the improvements offered by monolithic 3D integration. Here we show that uniformly doped, ultrathin (≤10 nm) single-crystalline silicon nanomembranes can be vertically stacked using a roll-transfer-printing process that is scalable to wafer-scale and tolerant to substrate topology and surface roughness, enabling multi-tiers of complementary junctionless transistors to be sequentially fabricated on the same starting substrate under a processing temperature ≤400 °C. These devices achieve performance approaching that of front-end-of-line silicon metal-oxide-semiconductor field-effect transistors with current density above 650 µA µm-1 and sub-10-nm inter-tier registration for high-density vertical integration. We vertically constructed logic gates, including inverters, NAND, NOR gates and static random-access memory cells, based on up to three-tier integration at transistor-level granularity. Our demonstrations provide a promising route towards silicon-based monolithic 3D circuits, especially for research and low-volume prototyping.
- 27 May 2026
- Published by Springer Nature in Nature
- Vol. 654 (8119) , 652-659
Monolithic three-dimensional integration of silicon transistors
Monolithic, three-dimensional (3D) integrated circuits promise advantages in packing density, energy consumption and interconnectivity bandwidth but require forming high-performance semiconductors and transistors on top tiers under the constraint of a limited thermal budget compatible with back-end-of-line integration1,2. Back-end-of-line-compatible transistors have been built on laser-annealed polycrystalline silicon, metal-oxide semiconductors, carbon nanotubes and two-dimensional chalcogenides3-5. However, their performance and reliability are much inferior to bottom-tier silicon metal-oxide-semiconductor field-effect transistors, which mask most of the improvements offered by monolithic 3D integration. Here we show that uniformly doped, ultrathin (≤10 nm) single-crystalline silicon nanomembranes can be vertically stacked using a roll-transfer-printing process that is scalable to wafer-scale and tolerant to substrate topology and surface roughness, enabling multi-tiers of complementary junctionless transistors to be sequentially fabricated on the same starting substrate under a processing temperature ≤400 °C. These devices achieve performance approaching that of front-end-of-line silicon metal-oxide-semiconductor field-effect transistors with current density above 650 µA µm-1 and sub-10-nm inter-tier registration for high-density vertical integration. We vertically constructed logic gates, including inverters, NAND, NOR gates and static random-access memory cells, based on up to three-tier integration at transistor-level granularity. Our demonstrations provide a promising route towards silicon-based monolithic 3D circuits, especially for research and low-volume prototyping.
- Open Access
- 31 March 2026
- Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
- Vol. 59 (2) , 687-699
PyExtal : a Python package for quantitative convergent-beam electron diffraction
Quantitative convergent-beam electron diffraction (QCBED) enables the measurement of structure factors and other structural parameters with high accuracy using dynamical diffraction theory. To do this, rigorous diffraction simulations and iterative intensity refinement are required. We have developed PyExtal , a Python-based software package for QCBED. PyExtal supports refinement of both small- and large-unit-cell crystals through automated computation workflows and flexible data handling of convergent-beam electron diffraction (CBED) and large-angle CBED patterns. The performance of PyExtal is demonstrated by using silicon and yttrium iron garnet as benchmark systems, with refined silicon structure factors showing excellent agreement with previous experimental results. As a computational platform, PyExtal provides a direct basis for experimental mapping of electron charge density in crystals and facilitates broader applications of dynamical-diffraction-based quantitative crystallographic analysis.
- 31 March 2026
- Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
- Vol. 59 (2) , 687-699
Open AccessPyExtal : a Python package for quantitative convergent-beam electron diffraction
Quantitative convergent-beam electron diffraction (QCBED) enables the measurement of structure factors and other structural parameters with high accuracy using dynamical diffraction theory. To do this, rigorous diffraction simulations and iterative intensity refinement are required. We have developed PyExtal , a Python-based software package for QCBED. PyExtal supports refinement of both small- and large-unit-cell crystals through automated computation workflows and flexible data handling of convergent-beam electron diffraction (CBED) and large-angle CBED patterns. The performance of PyExtal is demonstrated by using silicon and yttrium iron garnet as benchmark systems, with refined silicon structure factors showing excellent agreement with previous experimental results. As a computational platform, PyExtal provides a direct basis for experimental mapping of electron charge density in crystals and facilitates broader applications of dynamical-diffraction-based quantitative crystallographic analysis.
- 11 October 2024
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 8 (10)
Unraveling the origin of antiferromagnetic coupling at YIG/permalloy interface
- 11 October 2024
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 8 (10)
Unraveling the origin of antiferromagnetic coupling at YIG/permalloy interface
- 23 July 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (2) , 024426
Unconventional spin-orbit torques from sputtered filmsMaterials with strong spin-orbit coupling and low crystalline symmetry are promising for generating large unconventional spin-orbit torques (SOTs), such as in-plane fieldlike (FL) torques and out-of-plane dampinglike (DL) torques, which can effectively manipulate and deterministically switch an out-of-plane magnetization without the need for additional external in-plane magnetic fields. Here, we report SOTs generated by magnetron-sputtered /Permalloy (Py; )/MgO heterostructures using both spin-torque ferromagnetic resonance (ST-FMR) and second harmonic Hall measurements. We observed unconventional FL and DL torques in our samples due to spins polarized normal to the interface of and Py layers, and studied the influence of crystallographic order and layer thickness on the SOTs. By comparing the Raman spectra of samples prepared in different ways, we found a tensile strain in sputtered films, which might further enhance the generation of unconventional torques by reducing the symmetry of .- 23 July 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (2) , 024426
Unconventional spin-orbit torques from sputtered filmsMaterials with strong spin-orbit coupling and low crystalline symmetry are promising for generating large unconventional spin-orbit torques (SOTs), such as in-plane fieldlike (FL) torques and out-of-plane dampinglike (DL) torques, which can effectively manipulate and deterministically switch an out-of-plane magnetization without the need for additional external in-plane magnetic fields. Here, we report SOTs generated by magnetron-sputtered /Permalloy (Py; )/MgO heterostructures using both spin-torque ferromagnetic resonance (ST-FMR) and second harmonic Hall measurements. We observed unconventional FL and DL torques in our samples due to spins polarized normal to the interface of and Py layers, and studied the influence of crystallographic order and layer thickness on the SOTs. By comparing the Raman spectra of samples prepared in different ways, we found a tensile strain in sputtered films, which might further enhance the generation of unconventional torques by reducing the symmetry of .- Open Access
- 9 August 2023
- Published by Elsevier in Acta Materialia
- Vol. 259
Segregation-induced grain-boundary precipitation during early stages of liquid-metal embrittlement of an advanced high-strength steel
- 9 August 2023
- Published by Elsevier in Acta Materialia
- Vol. 259
Open AccessSegregation-induced grain-boundary precipitation during early stages of liquid-metal embrittlement of an advanced high-strength steel