HNHsu-Chih Ni

Hsu-Chih Ni

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Hsu-Chih Ni has a total of 36 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Magnetic anisotropy due to localized structural defects in strained yttrium iron garnet thin films

    by Xingzhi Wang, Jinho Lim, Yi Li, Hsu-Chih Ni, Jonathan Schimmels, Zhixin Zhang, Jiangchao Qian, Robert Busch, Youfu Qian, Phuoc Cao Van, et al.

    Yttrium iron garnet (YIG, ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$) thin films are promising material systems for quantum magnonics due to their ultralow magnetic damping and the capability of building on-chip spin wave devices to be coupled with superconducting microwave circuits. However, the default substrate for epitaxial YIG thin-film growth, ${\mathrm{Gd}}_{3}{\mathrm{Ga}}_{5}{\mathrm{O}}_{12}$ (GGG), suffers from strong microwave absorption at cryogenic temperature due to the magnetic moment induced by the rare-earth element Gd. In this work, we study strained epitaxial YIG thin films grown on ${\mathrm{Y}}_{3}{\mathrm{Sc}}_{2}{\mathrm{Ga}}_{3}{\mathrm{O}}_{12}$ (YSGG), a rare-earth-free substrate compatible with cryogenic applications. Using cross-sectional scanning transmission electron microscopy along with strain mapping, we show the existence of spot-shape domain defects in the epitaxial YIG films and their connection with strain and stoichiometry, leading to drastically different magnetic properties such as perpendicular magnetic anisotropy, magnetic hysteresis loop, and magnetic damping. Applying high-resolution orientation mapping, we identify localized lattice rotations as the structural origins of these domains. We hypothesize that these domains are formed by a self-composed off-stoichiometry during the growth of the YIG thin films, as a mechanism to accommodate the relatively large lattice mismatch between YIG and YSGG. By elucidating the structure-property relationship in YIG/YSGG thin films, this work highlights a strain accommodation mechanism in complex oxides and provides guidance for future works on the applications of strained YIG thin films in quantum information.


  • Monolithic three-dimensional integration of silicon transistors

    by Bao Lam, Yung Man Yu, Hyunjun Nam, Hsu-Chih Ni, Shomik Chatterjee, Shaloo Rakheja, Jian-Min Zuo, Qing Cao

    Monolithic, three-dimensional (3D) integrated circuits promise advantages in packing density, energy consumption and interconnectivity bandwidth but require forming high-performance semiconductors and transistors on top tiers under the constraint of a limited thermal budget compatible with back-end-of-line integration1,2. Back-end-of-line-compatible transistors have been built on laser-annealed polycrystalline silicon, metal-oxide semiconductors, carbon nanotubes and two-dimensional chalcogenides3-5. However, their performance and reliability are much inferior to bottom-tier silicon metal-oxide-semiconductor field-effect transistors, which mask most of the improvements offered by monolithic 3D integration. Here we show that uniformly doped, ultrathin (≤10 nm) single-crystalline silicon nanomembranes can be vertically stacked using a roll-transfer-printing process that is scalable to wafer-scale and tolerant to substrate topology and surface roughness, enabling multi-tiers of complementary junctionless transistors to be sequentially fabricated on the same starting substrate under a processing temperature ≤400 °C. These devices achieve performance approaching that of front-end-of-line silicon metal-oxide-semiconductor field-effect transistors with current density above 650 µA µm-1 and sub-10-nm inter-tier registration for high-density vertical integration. We vertically constructed logic gates, including inverters, NAND, NOR gates and static random-access memory cells, based on up to three-tier integration at transistor-level granularity. Our demonstrations provide a promising route towards silicon-based monolithic 3D circuits, especially for research and low-volume prototyping.


  • Open Access

    PyExtal : a Python package for quantitative convergent-beam electron diffraction

    by Hsu-Chih Ni, Robert Busch, Jian-Min Zuo

    Quantitative convergent-beam electron diffraction (QCBED) enables the measurement of structure factors and other structural parameters with high accuracy using dynamical diffraction theory. To do this, rigorous diffraction simulations and iterative intensity refinement are required. We have developed PyExtal , a Python-based software package for QCBED. PyExtal supports refinement of both small- and large-unit-cell crystals through automated computation workflows and flexible data handling of convergent-beam electron diffraction (CBED) and large-angle CBED patterns. The performance of PyExtal is demonstrated by using silicon and yttrium iron garnet as benchmark systems, with refined silicon structure factors showing excellent agreement with previous experimental results. As a computational platform, PyExtal provides a direct basis for experimental mapping of electron charge density in crystals and facilitates broader applications of dynamical-diffraction-based quantitative crystallographic analysis.


  • Unraveling the origin of antiferromagnetic coupling at YIG/permalloy interface

    by Jiangchao Qian, Yi Li, Zhihao Jiang, Robert Busch, Hsu-Chih Ni, Tzu-Hsiang Lo, Axel Hoffmann, André Schleife, Jian-Min Zuo


  • Unconventional spin-orbit torques from sputtered MoTe2 films

    by Shuchen Li, Jonathan Gibbons, Stasiu Chyczewski, Zetai Liu, Hsu-Chih Ni, Jiangchao Qian, Jian-Min Zuo, Jun-Fei Zheng, Wenjuan Zhu, Axel Hoffmann

    Materials with strong spin-orbit coupling and low crystalline symmetry are promising for generating large unconventional spin-orbit torques (SOTs), such as in-plane fieldlike (FL) torques and out-of-plane dampinglike (DL) torques, which can effectively manipulate and deterministically switch an out-of-plane magnetization without the need for additional external in-plane magnetic fields. Here, we report SOTs generated by magnetron-sputtered 1T′MoTe2/Permalloy (Py; Ni80Fe20)/MgO heterostructures using both spin-torque ferromagnetic resonance (ST-FMR) and second harmonic Hall measurements. We observed unconventional FL and DL torques in our samples due to spins polarized normal to the interface of MoTe2 and Py layers, and studied the influence of crystallographic order and MoTe2 layer thickness on the SOTs. By comparing the Raman spectra of 1T′MoTe2 samples prepared in different ways, we found a tensile strain in sputtered MoTe2 films, which might further enhance the generation of unconventional torques by reducing the symmetry of 1T′MoTe2.


  • Open Access

    Segregation-induced grain-boundary precipitation during early stages of liquid-metal embrittlement of an advanced high-strength steel

    by Y. Ikeda, H.C. Ni, A. Chakraborty, H. Ghassemi-Armaki, J.M. Zuo, R. Darvishi Kamachali, R. Maaß