Denzel Bridges
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Denzel Bridges has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
- Anming Hu
Department of Mechanical and Aerospace Engineering, University of Tennessee, Knoxville, USA
1 shared publication - David Fieser
Department of Mechanical and Aerospace Engineering, University of Tennessee, Knoxville, USA
1 shared publication - Pooran Joshi
Oak Ridge National Lab, 1 Bethel Valley Rd., Oak Ridge, TN 37831, USA
1 shared publication - Yongchao Yu
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
1 shared publication
Latest Publications
- Open Access
- 21 February 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (5) , 789
Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor
Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.
- 21 February 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (5) , 789
Open AccessFemtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor
Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.