Srisaran Venkatachalam
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Srisaran Venkatachalam has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
- Etienne Okada
University of Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, UMR 8520-IEMN, 59000 Lille, France
1 shared publication - Farid Medjdoub
IEMN, CNRS, Université de Lille 2 , 59650 Villeneuve d'Ascq
1 shared publication - François Grandpierron
CNRS-IEMN, Institute of Electronic, Microelectronic and Nanotechnology, 59652 Villeneuve-d’Ascq, France
1 shared publication - Kathia Harrouche
CNRS-IEMN, Institute of Electronic, Microelectronic and Nanotechnology, 59652 Villeneuve-d’Ascq, France
1 shared publication - Lyes Ben-Hammou
CNRS-IEMN, Institute of Electronic, Microelectronic and Nanotechnology, 59652 Villeneuve-d’Ascq, France
1 shared publication
Latest Publications
- Open Access
- 22 January 2023
- Published by MDPI AG in Micromachines
- Vol. 14 (2) , 291
Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.
- 22 January 2023
- Published by MDPI AG in Micromachines
- Vol. 14 (2) , 291
Open AccessLow Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.