Yinfeng Shen
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Yinfeng Shen has a total of 13 co-authors. Here are the top co-authors by number of shared publications:
- Liming Gao
State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
3 shared publications - Ming Li
State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, China
3 shared publications - Huiting Peng
State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
2 shared publications - Yiping Liu
State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
2 shared publications - Chao Fan
Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
1 shared publication - Hanshui Fan
Institute of Microelectronic Material & Technology, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
1 shared publication
Latest Publications
- Open Access
Highly Sensitive and Selective Toluene Gas Sensors Based on ZnO Nanoflowers Decorated with Bimetallic AuPt
Efficient sensors for toluene detecting are urgently needed to meet people’s growing demands for both environment and personal health. Metal oxide semiconductor (MOS)-based sensors have become brilliant candidates for the detection of toluene because of their superior performance over gas sensing. However, gas sensors based on pure MOS have certain limitations in selectivity, operating temperature, and long-term stability, which hinders their further practical applications. Noble metals (including Ag, Au, Pt, Pd, etc.) have the ability to enhance the performance of MOS-based sensors via surface functionalization. Herein, ZnO nanoflowers (ZNFs) modified with bimetallic AuPt are prepared for toluene detection through hydrothermal method. The response of a AuPt@ZNF-based gas sensor can reach 69.7 at 175 °C, which is 30 times, 9 times, and 10 times higher than that of the original ZNFs, Au@ZNFs, and Pt@ZNFs, respectively. Furthermore, the sensor also has a lower optimal operating temperature (175 °C), good stability (94% of previous response after one month), and high selectivity towards toluene, which is the result of the combined influence of the electronic and chemical sensitization of noble metals, as well as the unique synergistic effect of the AuPt alloy. In summary, AuPt@ZNF-based sensors can be further applied in toluene detection in practical applications.
Open AccessHighly Sensitive and Selective Toluene Gas Sensors Based on ZnO Nanoflowers Decorated with Bimetallic AuPt
Efficient sensors for toluene detecting are urgently needed to meet people’s growing demands for both environment and personal health. Metal oxide semiconductor (MOS)-based sensors have become brilliant candidates for the detection of toluene because of their superior performance over gas sensing. However, gas sensors based on pure MOS have certain limitations in selectivity, operating temperature, and long-term stability, which hinders their further practical applications. Noble metals (including Ag, Au, Pt, Pd, etc.) have the ability to enhance the performance of MOS-based sensors via surface functionalization. Herein, ZnO nanoflowers (ZNFs) modified with bimetallic AuPt are prepared for toluene detection through hydrothermal method. The response of a AuPt@ZNF-based gas sensor can reach 69.7 at 175 °C, which is 30 times, 9 times, and 10 times higher than that of the original ZNFs, Au@ZNFs, and Pt@ZNFs, respectively. Furthermore, the sensor also has a lower optimal operating temperature (175 °C), good stability (94% of previous response after one month), and high selectivity towards toluene, which is the result of the combined influence of the electronic and chemical sensitization of noble metals, as well as the unique synergistic effect of the AuPt alloy. In summary, AuPt@ZNF-based sensors can be further applied in toluene detection in practical applications.
- Open Access
Enhanced Acetone Sensing Properties Based on Au-Pd Decorated ZnO Nanorod Gas Sensor
The mature processes of metal oxide semiconductors (MOS) have attracted considerable interest. However, the low sensitivity of metal oxide semiconductor gas sensors is still challenging, and constrains its practical applications. Bimetallic nanoparticles are of interest owing to their excellent catalytic properties. This excellent feature of bimetallic nanoparticles can solve the problems existing in MOS gas sensors, such as the low response, high operating temperature and slow response time. To enhance acetone sensing performance, we successfully synthesized Au-Pd/ZnO nanorods. In this work, we discovered that Au-Pd nanoparticles modified on ZnO nanorods can remarkably enhance sensor response. The Au-Pd/ZnO gas sensor has long-term stability and an excellent response/recovery process. This excellent sensing performance is attributed to the synergistic catalytic effect of bimetallic AuPd nanoparticles. Moreover, the electronic and chemical sensitization of noble metals also makes a great contribution. This work presents a simple method for preparing Au-Pd/ZnO nanorods and provides a new solution for the detection of acetone based on metal oxide semiconductor.
Open AccessEnhanced Acetone Sensing Properties Based on Au-Pd Decorated ZnO Nanorod Gas Sensor
The mature processes of metal oxide semiconductors (MOS) have attracted considerable interest. However, the low sensitivity of metal oxide semiconductor gas sensors is still challenging, and constrains its practical applications. Bimetallic nanoparticles are of interest owing to their excellent catalytic properties. This excellent feature of bimetallic nanoparticles can solve the problems existing in MOS gas sensors, such as the low response, high operating temperature and slow response time. To enhance acetone sensing performance, we successfully synthesized Au-Pd/ZnO nanorods. In this work, we discovered that Au-Pd nanoparticles modified on ZnO nanorods can remarkably enhance sensor response. The Au-Pd/ZnO gas sensor has long-term stability and an excellent response/recovery process. This excellent sensing performance is attributed to the synergistic catalytic effect of bimetallic AuPd nanoparticles. Moreover, the electronic and chemical sensitization of noble metals also makes a great contribution. This work presents a simple method for preparing Au-Pd/ZnO nanorods and provides a new solution for the detection of acetone based on metal oxide semiconductor.
- Open Access
Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors
Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling, the data disturbance becomes more serious, especially for neighbor wordline interference (NWI), which leads to a deterioration of data storage reliability. Thus, a physical device model was constructed to investigate the NWI mechanism and evaluate critical device factors for this long-standing and intractable problem. As simulated by TCAD, the change in channel potential under read bias conditions presents good consistency with the actual NWI performance. Using this model, NWI generation can be accurately described through the combination of potential superposition and a local drain-induced barrier lowering (DIBL) effect. This suggests that a higher bitline voltage () transmitted by the channel potential can restore the local DIBL effect, which is ever weakened by NWI. Furthermore, an adaptive countermeasure is proposed for 3D NAND memory arrays, which can significantly minimize the NWI of triple-level cells (TLC) in all state combinations. The device model and the adaptive scheme were successfully verified by TCAD and 3D NAND chip tests. This study introduces a new physical model for NWI-related problems in 3D NAND flash, while providing a feasible and promising voltage scheme as a countermeasure to optimize data reliability.Open AccessAdaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors
Three-dimensional NAND flash memory is widely used in sensor systems as an advanced storage medium that ensures system stability through fast data access. However, in flash memory, as the number of cell bits increases and the process pitch keeps scaling, the data disturbance becomes more serious, especially for neighbor wordline interference (NWI), which leads to a deterioration of data storage reliability. Thus, a physical device model was constructed to investigate the NWI mechanism and evaluate critical device factors for this long-standing and intractable problem. As simulated by TCAD, the change in channel potential under read bias conditions presents good consistency with the actual NWI performance. Using this model, NWI generation can be accurately described through the combination of potential superposition and a local drain-induced barrier lowering (DIBL) effect. This suggests that a higher bitline voltage () transmitted by the channel potential can restore the local DIBL effect, which is ever weakened by NWI. Furthermore, an adaptive countermeasure is proposed for 3D NAND memory arrays, which can significantly minimize the NWI of triple-level cells (TLC) in all state combinations. The device model and the adaptive scheme were successfully verified by TCAD and 3D NAND chip tests. This study introduces a new physical model for NWI-related problems in 3D NAND flash, while providing a feasible and promising voltage scheme as a countermeasure to optimize data reliability.