Shuai-Shuai Luo

Ferroelectric topological structures have broad application prospects for high-density information storage for long-term data retention via topological protection. However, the high-density memory component might generate tremendous power consumption, causing the failure of ferroelectric devices due to the severe thermal effect. There remains an emergent issue on the synchronous achievement of high-density data storage with the decreasing influences of the thermal effects in ferroelectric topological domain structures. Here, we introduce dual-probe excitation to control the symmetry of the electric field and integrate the phase field simulation for modulating the flux-closure ferroelectric domain configuration to simultaneously improve the memory storage unit and thermal conductivity at the nanoscale in PbTiO3 thin film under a piezoresponse force microscopy experiment. It is found that the grown flux-closure polar state in both in-plane directions encourages us to enhance the storage density during dual-probe excitation in topological ferroelectric memory devices. Moreover, the increased number of flux-closure polar states and the decreased density of the domain walls can be obtained by using dual-probe excitation. Finally, we figured out that both the double-staircase-like and paddle-like domain configurations exhibit large storage units and effective thermal conductivity simultaneously under dual-probe excitation. Our study gives a guideline to synchronously improve storage performance and thermal conductivity through multiple-probe excitations in topological ferroelectric materials and devices.

Manipulation of topological structures has become one of the most interesting topics in ferroelectrics through multiple excitations due to their prospective applications in electro-mechanical-optic devices. Scanning probe microscopy (SPM) has been developed as a powerful tool to manipulate the polar state in ferroic materials, in which the electric field induced by charged SPM enables dynamic coupling between the switching of the polar states and electromigration of oxygen vacancies, resulting in unknown influences of oxygen vacancy on the polar state in ferroelectric topological structures. Here, we regulate the polar state by considering oxygen vacancies and a non-uniform electric field under the charged SPM experiment for flux-closure domain structures in PbTiO3 thin films. The charged SPM probe can excite the growth of newly flux-closure domains to improve the density of topological states. In contrast, oxygen vacancies are found to suddenly prohibit the evolution of the flux-closure domain structure, when their concentration jumps to a threshold value. Our results might give guidelines to increase and stabilize the memory unit through co-modulating the electric field and ions injection in the information field.

The heavy fermion ferromagnet CeRh₆Ge₄ is the first example of a clean stoichiometric system where the ferromagnetic transition can be continuously suppressed by hydrostatic pressure to a quantum critical point. In order to reveal the outcome when the magnetic lattice of CeRh₆Ge₄ is diluted with non-magnetic atoms, this study reports comprehensive measurements of the physical properties of both single crystal and polycrystalline samples of La _x Ce_1–x Rh₆Ge₄. With increasing x, the Curie temperature decreases, and no transition is observed for x > 0.25, while the system evolves from exhibiting coherent Kondo lattice behaviors at low x to the Kondo impurity scenario at large x. Moreover, non-Fermi liquid behavior is observed over a wide doping range, which agrees well with the disordered Kondo model for 0.52 ≤ x ≤ 0.66, while strange metal behavior is revealed in the vicinity of x _c = 0.26.