Alif Laila Muthali
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Alif Laila Muthali has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
Hao Li
State Key Laboratory of Optoelectronic Materials and Technologies School of Electronics and Information Technology Sun Yat‐Sen University Guangzhou 510275 China
1 shared publication- Heyun Tan
Institute of Advanced Photonics Technology, School of Information Engineering Guangdong University of Technology Guangzhou China
1 shared publication - Jeremy C. Adcock
Center for Silicon Photonics for Optical Communication (SPOC) Department of Electrical and Photonics Engineering Technical University of Denmark Lyngby 2800 Denmark
1 shared publication - Leif Katsuo Oxenløwe
Technical University of Denmark
1 shared publication - Xinlun Cai
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, China
1 shared publication - Yonghe Yu
Center for Silicon Photonics for Optical Communication (SPOC) Department of Electrical and Photonics Engineering Technical University of Denmark Lyngby 2800 Denmark
1 shared publication
Latest Publications
- Open Access
- 29 September 2023
- Published by Wiley in Advanced Quantum Technologies
- Vol. 8 (2)
High‐Resolution Single Photon Level Storage of Telecom Light Based on Thin Film Lithium Niobate Photonics
This study presents an experimental analysis of high‐resolution single photon buffers based on low‐loss thin film lithium niobate (TFLN) photonic devices operating at room temperature. While dynamically controlling writing and reading operations within picosecond timescales poses a challenge, the devices are capable of resolving 102.8 4.6 ps time step with ‐0.89 dB loss per round‐trip and 197.7 6.6 ps time steps with ‐1.29 dB loss per round‐trip, respectively. These results imply that the devices are at the cutting edge of on‐chip technology, performing in the current state of the art at the single photon level. Both of the single photon buffers do not introduce any detrimental effects and provide a high signal‐to‐noise ratio (SNR). The room‐temperature, low‐loss, and voltage‐controlled TFLN buffers combine scalable architecture with relatively high buffering capacity in the sub‐nanosecond regime and are expected to unlock many novel photonics applications such as temporally multiplexed single photon sources.
- 29 September 2023
- Published by Wiley in Advanced Quantum Technologies
- Vol. 8 (2)
Open AccessHigh‐Resolution Single Photon Level Storage of Telecom Light Based on Thin Film Lithium Niobate Photonics
This study presents an experimental analysis of high‐resolution single photon buffers based on low‐loss thin film lithium niobate (TFLN) photonic devices operating at room temperature. While dynamically controlling writing and reading operations within picosecond timescales poses a challenge, the devices are capable of resolving 102.8 4.6 ps time step with ‐0.89 dB loss per round‐trip and 197.7 6.6 ps time steps with ‐1.29 dB loss per round‐trip, respectively. These results imply that the devices are at the cutting edge of on‐chip technology, performing in the current state of the art at the single photon level. Both of the single photon buffers do not introduce any detrimental effects and provide a high signal‐to‐noise ratio (SNR). The room‐temperature, low‐loss, and voltage‐controlled TFLN buffers combine scalable architecture with relatively high buffering capacity in the sub‐nanosecond regime and are expected to unlock many novel photonics applications such as temporally multiplexed single photon sources.