Matthew Zimmermann

Next-generation photonic architectures for AI, sensing, and quantum computing require thousands to millions of reprogrammable photonic devices on a chip ¹ . The monolithic integration of Electronically-backed Photonic Integrated Circuits (EPICs) allows for very high density electrical interconnection and electronic drivers that can scale with photonics. Piezo-optomechanical photonic integrated circuits (POMPICs) offer low power consumption, high speed modulation, cryogenic compatibility and broadband optical transparency from ultraviolet to infrared wavelengths ^2,3 , but have not been demonstrated with monolithically integrated CMOS electronics. Here, we show a fully monolithic, all-CMOS fabricated platform for POMPICs co-fabricated with commercial control electronics. 200 millimeter photonic wafers are constructed directly on completed CMOS driver wafers by back-end-of-line processing, connecting integrated piezoelectric actuators under broadband silicon nitride waveguides to a high-density digital backplane comprising >2 million electrical connections per die with 6.4×6.4 micron electrode pitch. We introduce segmented POMPIC components as Photonic Digital-to-Analog converters (PDACs) that convert low-voltage digital electronic signals to multi-bit analog optical phase and amplitude modulation, and we demonstrate parallel control of optical phase shifters, Mach-Zehnder interferometers, optical routing trees, and tunable ring resonators using a standard HDMI interface to program CMOS electronics. We test multiple reticles and perform electronic and photonic characterization across the entire wafer to establish uniformity and yield, demonstrating wafer-scale integration of POMPICs on an electronic backplane and enabling dense, scalable electronic control of piezo-optomechanical circuits. This architecture provides a path to tightly integrated, high-channel-count control of quantum and classical piezo-optomechanical photonic integrated circuits, supporting applications in linear optical quantum computing, hybrid quantum systems with solid-state emitters, photonic neural networks, quantum networking, and display technologies.

A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality^1,2, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration^3,4. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm² footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s^–1 mm^–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.

Programmable photonic integrated circuits (PICs) have recently emerged as an important technology for quantum information science and artificial neural networks. In particular, PICs with microelectromechanical-based modulators have the advantages of voltage-based control, ultra-low-energy consumption, cryogenic compatibility, and CMOS-foundry support. Here, we report a cantilever optical modulator that utilizes hybrid piezoelectric and electrostatic tuning forces together on a monolithic silicon nitride (SiN) PIC platform. The device achieves actuation of visible-wavelength light with quasi-static tuning up to 10 kHz at 1.5 Vπ-cm as well as high-speed (>20 MHz) AC modulation with dynamically adjustable (25–40 MHz) mechanical resonances. We report the physics of how geometric nonlinearities, such as capacitive pull-in, give rise to suspended and contacted cantilever modes. These reversible operating regimes generate different strain profiles and boundary conditions, which are responsible for the active tuning of the mechanical resonances. Our proof-of-concept electrostatic–piezo modulator shows promising potential in large-scale programmable PICs applied to high-speed optical switching and optomechanical sensing.

Optically linked solid-state quantum memories such as color centers in diamond are a promising platform for distributed quantum information processing and networking. Photonic integrated circuits (PICs) have emerged as a crucial enabling technology for these systems, integrating quantum memories with efficient electrical and optical interfaces in a compact and scalable platform. Packaging these hybrid chips into deployable modules while maintaining low optical loss and resiliency to temperature cycling is a central challenge to their practical use. We demonstrate a packaging method for PICs using surface grating couplers and angle-polished fiber arrays that is robust to temperature cycling, offers scalable channel count, applies to a wide variety of PIC platforms and wavelengths, and offers pathways to automated high-throughput packaging. Using this method, we show optically and electrically packaged quantum memory modules integrating all required qubit controls on chip, operating at millikelvin temperatures with 0 mode at a wavelength of 737 nm.

Advancements in light modulator technology have been driving discoveries and progress across various fields. The problem of large-scale coherent optical control of atomic quantum systems—including cold atoms, ions, and solid-state color centers—presents among the most stringent requirements. This motivates a new generation of high-speed large-scale modulator technology operating in the visible to near-infrared wavelength range. We introduce a scalable modulator technology based on piezoelectrically actuated silicon nitride resonant waveguide gratings fabricated on 200 mm diameter silicon wafers with CMOS-compatible processes. We present a proof-of-concept device with 4 × 4 individually addressable 50 μm × 50 μm pixels or channels, each containing a resonant waveguide grating with a ~ 780 nm design wavelength, supporting > 100 MHz modulation speeds, and a spectral response with > 20 dB extinction.

A critical figure of merit (FoM) for electro-optic (EO) modulators is the transmission change per voltage, dT/dV. Conventional approaches in wave-guided modulators maximize dT/dV via a high EO coefficient or longer light-material interaction lengths but are ultimately limited by material losses and nonlinearities. Optical and RF resonances improve dT/dV at the cost of spectral non-uniformity, especially for high-Q optical cavity resonances. Here, we introduce an EO modulator based on piezo-strain-concentration of a photonic crystal cavity to address both trade-offs: (i) it eliminates the trade-off between dT/dV and waveguide loss—i.e., enhancement of the resonance tuning efficiency dv _c /dV for the fixed EO coefficient, waveguide length, and cavity Q—and (ii) at high DC strains it exhibits a non-volatile (NV) cavity tuning Δv_c,NV for passive memory and programming of multiple devices into resonance despite fabrication variations. The device is fabricated on a scalable silicon nitride-on-aluminum nitride platform. We measure dv _c /dV=177±1MHz/V, corresponding to Δv _c =40±0.32GHz for a voltage spanning ±120V with an energy consumption of δU/Δv _c =0.17nW/GHz. The modulation bandwidth is flat up to ω_BW,3dB/2π=3.2±0.07MHz for broadband DC-AC and 142±17MHz for resonant operation near a 2.8 GHz mechanical resonance. Optical extinction up to 25 dB is obtained via Fano-type interference. Strain-induced beam-buckling modes are programmable under a “read-write” protocol with a continuous, repeatable tuning range of 5±0.25GHz, allowing for storage and retrieval, which we quantify with mutual information of 2.4 bits and a maximum non-volatile excursion of 8 GHz. Using a full piezo-optical finite-element-model (FEM) we identify key design principles for optimizing strain-based modulators and chart a path towards achieving performance comparable to lithium niobate-based modulators and the study of high strain physics on-chip.

A seamless chip-to-world photonic interface enables wide-ranging advancements in optical ranging, display, communication, computation, imaging, and light-matter interaction. An optimal solution allows for 2D scanning of a diffraction-limited beam from anywhere on a photonic chip over a large number of beam-spots in free-space. Currently, devices with direct PIC integration rely on tiled apertures with poor mode qualities, large footprints, and complex control systems. Micro-mechanical beam scanners have good beam quality but lack direct PIC integration and are inertially-limited due to the use of bulk optical components or structures in which the optical aperture and actuator sizes are inextricably linked, resulting in trade-offs among resolution, speed, and footprint. Here, we overcome these limitations with the photonic "ski-jump": a nanoscale optical waveguide monolithically integrated atop a piezoelectrically actuated cantilever which passively curls ~90° out-of-plane in a footprint of 50⨉. Using this device, we demonstrate image projection, video projection, and the initialization and readout of single photons from silicon vacancy centers in diamond waveguides. Based on current performance, we identify pathways for achieving >1 giga-spots at kHz-rates in a ~1 cm ² area to provide a seamless, scalable optical pipeline between integrated photonic processors and the free-space world.

Programmable photonic integrated circuits (PICs) are emerging as powerful tools for control of light, with applications in quantum information processing, optical range finding, and artificial intelligence. Low-power implementations of these PICs involve micromechanical structures driven capacitively or piezoelectrically but are often limited in modulation bandwidth by mechanical resonances and high operating voltages. Here we introduce a synchronous, micromechanically resonant design architecture for programmable PICs and a proof-of-principle 1×8 photonic switch using piezoelectric optical phase shifters. Our design purposefully exploits high-frequency mechanical resonances and optically broadband components for larger modulation responses on the order of the mechanical quality factor Q_m while maintaining fast switching speeds. We experimentally show switching cycles of all 8 channels spaced by approximately 11 ns and operating at 4.6 dB average modulation enhancement. Future advances in micromechanical devices with high Q_m, which can exceed 10000, should enable an improved series of low-voltage and high-speed programmable PICs.

Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of optical control systems that can manipulate the light field with high fidelity at wavelengths relevant for AMO applications. These systems are characterized by criteria: (C1) operation at a design wavelength of choice in the visible (VIS) or near-infrared (IR) spectrum, (C2) a scalable platform that can support large channel counts, (C3) high-intensity modulation extinction and (C4) repeatability compatible with low gate errors, and (C5) fast switching times. Here, we provide a pathway to address these challenges by introducing an atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology. Based on a complementary metal–oxide–semiconductor fabrication process, this atom-control PIC (APIC) technology can meet system requirements (C1)–(C5). As a proof of concept, we demonstrate a 16-channel silicon-nitride-based APIC with (5.8±0.4)ns response times and >30dB extinction ratio at a wavelength of 780 nm.