Duo Chen

Water-soluble ZnSe quantum dots (QDs) typically suffer from limited photoluminescence (PL) efficiency and poor long-term stability due to intrinsic defects and surface traps. Here, we report a strategy combining Al³⁺ doping with stepwise multilayer ZnS shell growth. The stepwise precursor injection ensures uniform shell formation, while Al³⁺ incorporation suppresses defect-related recombination within the ZnSe core. The resulting ZnSe:Al/ZnS/ZnS/ZnS QDs exhibit a PL quantum yield of 23.24% and an average lifetime of 129.28 ns. They retain 91% of their initial PL intensity after 200 days under ambient conditions. Mechanistic analysis indicates that defect regulation and multilayer shell passivation synergistically promote band-edge radiative recombination over defect-assisted pathways. This work provides a strategy for simultaneously regulating defect states and surface stability in water-soluble semiconductor QDs.

Experimental results suggest a feasible strategy for tuning the superconducting properties of MgB₂ through the incorporation of an electroluminescent inhomogeneous phase. By introducing GaP electroluminescent inhomogeneous phases into MgB₂, the effects of emission intensity variation on the sample structure, superconducting transition temperature, electrical transport behavior, and magnetic properties were systematically investigated. The results show that, at a fixed GaP addition level, the superconducting transition temperature T_c increases steadily from 38.2 K to 39.6 K with increasing emission intensity of the inhomogeneous phase, corresponding to a maximum enhancement of approximately 1.4 K. Meanwhile, the zero-resistance temperature shifts upward synchronously, indicating that the entire superconducting transition region moves toward higher temperatures. Raman measurements show that the peak position and linewidth of the E_2g phonon mode evolve systematically with emission intensity, while the electron–phonon coupling parameter λ exhibits a trend consistent with that of T_c. In addition, the nanoscale dispersed distribution of the GaP inhomogeneous phase, together with the interface/defect structures it introduces, appears to promote sample densification and enhance flux pinning, resulting in an increase in the critical current density J_c by approximately 69% at 20 K in self-field and an enhancement of the irreversibility field H_irr by about 31.5%. These results suggest that, beyond the effect of static inhomogeneous-phase incorporation, the luminescence-activated state under bias excitation is likely involved in modulating the superconducting response of MgB₂. This work provides a new experimental perspective for synergistically regulating the properties of conventional superconductors through the combined effects of inhomogeneous phases and excited states.

The enhancement of superconducting properties of high-temperature copper-oxide superconductors like B(P)SCCO remains a hot research topic in the field of superconducting materials. This study introduces GaP quantum dots (QDs) as a heterophase, leveraging their electroluminescent properties to enhance the superconductivity of B(P)SCCO. Experimental results demonstrate that the electroluminescence generated by GaP quantum dots (QDs) under an applied electric field induces tunable superconducting enhancement of B(P)SCCO. A reproducible trend of enhancement in the critical transition temperature (T_c) and depairing current density (J_d) is observed with increasing QD electroluminescent intensity, suggesting a positive correlation. This electroluminescence-induced enhancement dominates over the inherent impurity effects at optimal QD content.

The enhancement of superconducting properties in high-temperature copper-oxide superconductor B(P)SCCO remains a hot research topic in the field of superconducting materials. Building on previous research, here we introduce GaP quantum dots as an heterophase into the B(P)SCCO superconductor, aiming to enhance its superconductivity through the luminescent properties of GaP quantum dots. The experimental results demonstrate that the introduction of GaP quantum dots into B(P)SCCO generates significant tunable superconducting effects, leading to enhanced critical transition temperature (Tc), critical current density (Jc), and Meissner field (Hc) of B(P)SCCO with increasing luminescent intensity of the GaP quantum dots. The enhancement effect induced by GaP quantum dots exhibits a positive correlation with luminescent intensity, meaning samples with the addition of GaP quantum dots exhibiting higher luminescent intensity show elevated Tc, Jc, and Hc values. Unlike impurity effects, a distinct critical concentration dependency is observed. Notably, this GaP quantum dot modification strategy is not only effective in conventional superconductors but also applicable to high-temperature oxide superconductors.

Gallium-based light-emitting diodes (LEDs), including AlGaInP and GaN, have become the most widely used light-emitting devices in modern scientific research and practical applications. However, structures like carrier injection layers, active layers, and quantum well layers ensure the high luminescence efficiency of LEDs but also limit their applications at the micro- and nanoscale. Although the next generation of micrometer-scale light-emitting diodes (Micro-LEDs) has alleviated these issues to some extent, challenges such as edge effects and etching damage caused by size reduction lead to lower luminous efficiency and shorter lifetimes. Inspired by LED structure, this study designed and synthesized core–shell composite GaP:Zn/GaP/GaInP and GaP:Te/GaP nanoparticles using a thermal injection method. After high-temperature annealing, these composite materials demonstrated efficient electroluminescent performance under electric field excitation through band-edge transitions and the Zn_Ga-O_P recombination mechanism. Experimental results show that the GaP:Zn/GaP/GaInP-GaP:Te/GaP composite samples with doping concentrations of 15%Zn-8%Te, a core–shell precursor ratio of 1:1:1, and reaction times of 1 h:20 min:20 min exhibit the best electron–hole injection efficiency and bound-recombination efficiency. Under excitation by an external electric field, they demonstrated optimal electroluminescence performance, with a relative luminous intensity of 11,109.21 at 600 nm, approximately 15 times higher than that of the initial condition samples. In addition, this study systematically investigated the structure, morphology, and elemental composition of the composite materials using various characterization techniques, including X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). These GaP-doped nanoparticles with a core–shell composite structure, inspired by LED design, exhibited outstanding electroluminescent performance, providing new insights into the development of novel micro- and nanoscale electroluminescent materials.

As a highly regarded superconducting material with a concise layered structure, MgB₂ has attracted significant scientific attention and holds vast potential for applications. However, its limited current-carrying capacity under high magnetic fields has greatly hindered its practical use. To address this issue, we have enhanced the superconducting performance of MgB₂ by incorporating inhomogeneous phase nanostructures of p-n junctions with electroluminescent properties. Through temperature-dependent measurements of magnetization, electronic specific heat, and Hall coefficient under various magnetic fields, we have confirmed the crucial role of inhomogeneous phase electroluminescent nanostructures in improving the properties of MgB₂. Experimental results demonstrate that the introduction of electroluminescent inhomogeneous phases effectively enhances the superconducting performance of MgB₂. Moreover, by controlling the size of the electroluminescent inhomogeneous phases and optimizing grain connectivity, density, and microstructural uniformity, we can further improve the critical temperature (T_C) and flux-pinning capability of MgB₂ superconducting materials. Comprehensive studies on the physical properties of MgB₂ superconducting structures added with p-n junction electroluminescent inhomogeneous phases also confirm the general effectiveness of electroluminescent inhomogeneous phases in enhancing the performance of superconducting materials.

Superconducting materials exhibit unique physical properties and have great scientific value and vast industrial application prospects. However, due to limitations, such as the critical temperature (T_C) and critical current density (J_C), the large-scale application of superconducting materials remains challenging. Chemical doping has been a commonly used method to enhance the superconductivity of B(P)SCCO. However, satisfactory enhancement results have been difficult to achieve. In this study, we introduce green-light GaN p-n junction particles as inhomogeneous phases into B(P)SCCO polycrystalline particles to form a smart meta-superconductor (SMSC) structure. Based on the electroluminescence properties of the p-n junction, the Cooper pairs were stimulated and strengthened to enhance the superconductivity of B(P)SCCO. The experimental results demonstrate that the introduction of inhomogeneous phases can indeed enhance the critical temperature T_C, critical current density J_C, and complete diamagnetism (Meissner effect) of B(P)SCCO superconductors. Moreover, when the particle size of the raw material of B(P)SCCO is reduced from 30 to 5 μm, the grain size of the sintered samples also decreases, and the optimal doping concentration of the inhomogeneous phases increases from 0.15 wt.% to 0.2 wt.%, further improving the superconductivity.