Ezequiel Paz Totolhua
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Ezequiel Paz Totolhua has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
- Ana Cecilia Piñón Reyes
Área de Ingeniería, Benemérita Universidad Autónoma de Puebla (BUAP), Ciudad Universitaria, Blvd. Valsequillo y Esquina, Av. San Claudio s/n, Col. San Manuel, Puebla 72570, Mexico
3 shared publications - Javier Flores Méndez
Área de Ingeniería, Benemérita Universidad Autónoma de Puebla (BUAP), Ciudad Universitaria, Blvd. Valsequillo y Esquina, Av. San Claudio s/n, Col. San Manuel, Puebla 72570, Mexico
3 shared publications - Jesús Carrillo López
Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria. Av. San Claudio y 14 Sur, Puebla 72570, Mexico
3 shared publications - José Alberto Luna López
Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla (BUAP), 14 Sur y Av. San Claudio, Puebla 72570, Puebla, Mexico
3 shared publications - Karim Monfil Leyva
Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico
2 shared publications - Zaira Jocelyn Hernández Simón
Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico
2 shared publications
Latest Publications
- Open Access
Optimization of Thicknesses, Defect Density, and Bandgap in a Lead-Free CsSnBr3/Silicon Two-Terminal Tandem Solar Cell via Simulation and Numerical Interpolation
This research study conducts a computational analysis of a two-terminal (2T) Perovskite-on-silicon (PVK-Si) solar cell with a tandem configuration. The motivation for this analysis arises from the outstanding potential of PVK-Si solar cells to surpass the efficiency limitations of conventional photovoltaic technology. The tandem configuration utilizes a combination of CsSnBr3 in the top sub-cell and crystalline silicon (c-Si) in the bottom sub-cell. After optimizing parameters of the top sub-cell (FTO/TiO2/CsSnBr3/rGO/Au), which included the thicknesses of CsSnBr3 (500 nm), TiO2 (40 nm), rGO (50 nm), the interface defects (1013 cm−2), and the bandgap of CsSnBr3 (1.78 eV), the PVK-Si tandem device was simulated. As a result, the top CsSnBr3 sub-cell achieved an efficiency of 21.62%, while the bottom silicon sub-cell achieved an efficiency of 23.48%. Subsequently, the sub-cells were interconnected in series using filtered spectra and current-density matching. After interpolating the J-V curves, the tandem exhibited a global efficiency of 29.76%, a fill factor (FF) of 85.30%, a matched current density (JSC) of 19.02 mA/cm2, and an open-circuit voltage (VOC) of 1.83 V. The EQE results confirmed efficient photon management via complementary sub-cell absorption. The performance is competitive with experimental lead-based tandems and exceeds that of current lead-free simulations. Therefore, this research proposes a viable pathway for the development of non-toxic, cost-effective tandem solar systems with manufacturing capabilities.
Open AccessOptimization of Thicknesses, Defect Density, and Bandgap in a Lead-Free CsSnBr3/Silicon Two-Terminal Tandem Solar Cell via Simulation and Numerical Interpolation
This research study conducts a computational analysis of a two-terminal (2T) Perovskite-on-silicon (PVK-Si) solar cell with a tandem configuration. The motivation for this analysis arises from the outstanding potential of PVK-Si solar cells to surpass the efficiency limitations of conventional photovoltaic technology. The tandem configuration utilizes a combination of CsSnBr3 in the top sub-cell and crystalline silicon (c-Si) in the bottom sub-cell. After optimizing parameters of the top sub-cell (FTO/TiO2/CsSnBr3/rGO/Au), which included the thicknesses of CsSnBr3 (500 nm), TiO2 (40 nm), rGO (50 nm), the interface defects (1013 cm−2), and the bandgap of CsSnBr3 (1.78 eV), the PVK-Si tandem device was simulated. As a result, the top CsSnBr3 sub-cell achieved an efficiency of 21.62%, while the bottom silicon sub-cell achieved an efficiency of 23.48%. Subsequently, the sub-cells were interconnected in series using filtered spectra and current-density matching. After interpolating the J-V curves, the tandem exhibited a global efficiency of 29.76%, a fill factor (FF) of 85.30%, a matched current density (JSC) of 19.02 mA/cm2, and an open-circuit voltage (VOC) of 1.83 V. The EQE results confirmed efficient photon management via complementary sub-cell absorption. The performance is competitive with experimental lead-based tandems and exceeds that of current lead-free simulations. Therefore, this research proposes a viable pathway for the development of non-toxic, cost-effective tandem solar systems with manufacturing capabilities.
- Open Access
Enhanced Efficiency of Mixed-Halide Perovskite Solar Cells Through Optimization of the Layer Thicknesses, Defect Density, and Metal Contact Work Function
Mixed-halide perovskites enable the creation of high-performance and low-cost solar cells. Chloride incorporation enhances film morphology, carrier diffusion length, and stability, improving device performance. Nevertheless, optimizing film thickness, defect density, and metal contact work function remains insufficiently explored, despite its potential to enhance power conversion efficiency. In this study, a numerical simulation was performed using SCAPS-1D (version 3.3.10) to identify the optimal parameters for the FTO/TiO2/CH3NH3Pb3−xClx/Spiro-OMeTAD/Au configuration. The best performance parameters that have been published in the literature based on experimental results are as follows: VOC = 1.077 V, JSC = 21.45 mA/cm2, FF = 77.57%, and PCE = 17.97%. In contrast, the performance parameters obtained from numerical simulations for the same structure are VOC = 1.28 V, JSC = 21.63 mA/cm2, FF = 78%, and PCE = 21.53%. In our numerical analysis, we achieved efficiencies that were comparable to those reported in experimental studies, and after optimization, superior performance parameters were attained, including VOC = 1.179 V, JSC = 27.26 mA/cm2, FF = 81.03%, and PCE = 26.07%. These results indicate that optimized parameters can be integrated into the design and fabrication of mixed-halide perovskite solar cells to enhance performance.
Open AccessEnhanced Efficiency of Mixed-Halide Perovskite Solar Cells Through Optimization of the Layer Thicknesses, Defect Density, and Metal Contact Work Function
Mixed-halide perovskites enable the creation of high-performance and low-cost solar cells. Chloride incorporation enhances film morphology, carrier diffusion length, and stability, improving device performance. Nevertheless, optimizing film thickness, defect density, and metal contact work function remains insufficiently explored, despite its potential to enhance power conversion efficiency. In this study, a numerical simulation was performed using SCAPS-1D (version 3.3.10) to identify the optimal parameters for the FTO/TiO2/CH3NH3Pb3−xClx/Spiro-OMeTAD/Au configuration. The best performance parameters that have been published in the literature based on experimental results are as follows: VOC = 1.077 V, JSC = 21.45 mA/cm2, FF = 77.57%, and PCE = 17.97%. In contrast, the performance parameters obtained from numerical simulations for the same structure are VOC = 1.28 V, JSC = 21.63 mA/cm2, FF = 78%, and PCE = 21.53%. In our numerical analysis, we achieved efficiencies that were comparable to those reported in experimental studies, and after optimization, superior performance parameters were attained, including VOC = 1.179 V, JSC = 27.26 mA/cm2, FF = 81.03%, and PCE = 26.07%. These results indicate that optimized parameters can be integrated into the design and fabrication of mixed-halide perovskite solar cells to enhance performance.
- Open Access
Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability
Inverted perovskite solar cells (PSCs) have gained much attention due to their low hysteresis effect, easy fabrication, and good stability. In this research, an inverted perovskite solar cell ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag structure was simulated and optimized using SCAPS-1D version 3.3.10 software. The influence on the device of parameters, including perovskite thickness, total defect density, series and shunt resistances, and operating temperature, are discussed and analyzed. With optimized parameters, the efficiency increased from 13.47% to 18.33%. Then, a new /ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag device was proposed which includes a silicon-rich oxide () layer. This material was used as the down-conversion energy material, which converts high-energy photons (ultraviolet UV light) into low-energy photons (visible light), improving the stability and absorption of the device. Finally, with , we obtained an efficiency of 22.46% in the simulation. Therefore, the device with the layer is the most suitable as it has better values for current density–voltage output and quantum efficiency than the device without .Open AccessNumerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability
Inverted perovskite solar cells (PSCs) have gained much attention due to their low hysteresis effect, easy fabrication, and good stability. In this research, an inverted perovskite solar cell ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag structure was simulated and optimized using SCAPS-1D version 3.3.10 software. The influence on the device of parameters, including perovskite thickness, total defect density, series and shunt resistances, and operating temperature, are discussed and analyzed. With optimized parameters, the efficiency increased from 13.47% to 18.33%. Then, a new /ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag device was proposed which includes a silicon-rich oxide () layer. This material was used as the down-conversion energy material, which converts high-energy photons (ultraviolet UV light) into low-energy photons (visible light), improving the stability and absorption of the device. Finally, with , we obtained an efficiency of 22.46% in the simulation. Therefore, the device with the layer is the most suitable as it has better values for current density–voltage output and quantum efficiency than the device without . - Open Access
- 30 June 2023
- Published by ECORFAN in Revista de Energías Renovables
- p. 1-8
Design of a p-i-n type inverted perovskite solar cell using SiOx as down-conversion material to improve PCE: Simulation and optimization in SCAPS-1D
In this research work, an inverted p-i-n type perovskite solar cell: ITO/PEDOT: PSS/CH3NH3PbI3/PCBM/Au has been simulated and optimized in SCAPS-1D. The optimized parameters in SCAPS-1D that improved solar performance were: perovskite thickness, the total defect density of perovskite, the total defect density of interfaces, series and shunt resistances, and device operating temperature. As a result, the efficiency (PCE) increased to 18.33%. Subsequently, when the silicon-rich oxide (SiOx) material was implemented in the simulation as downconversion energy material on the outside of the cell, a power conversion efficiency (PCE) of 23.7% was obtained. The SiOX film obtained experimentally by sputtering obtained good photoluminescence, absorption coefficient, band gap, and transmittance characteristics before and after thermal annealing. These characteristics have been considered for the proposed device. It is indicated that the inverted perovskite solar cell of type pi-n: SiOx/ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Au has better J-V output values and EQ quantum efficiency than the perovskite solar cell without SiOx.
- 30 June 2023
- Published by ECORFAN in Revista de Energías Renovables
- p. 1-8
Open AccessDesign of a p-i-n type inverted perovskite solar cell using SiOx as down-conversion material to improve PCE: Simulation and optimization in SCAPS-1D
In this research work, an inverted p-i-n type perovskite solar cell: ITO/PEDOT: PSS/CH3NH3PbI3/PCBM/Au has been simulated and optimized in SCAPS-1D. The optimized parameters in SCAPS-1D that improved solar performance were: perovskite thickness, the total defect density of perovskite, the total defect density of interfaces, series and shunt resistances, and device operating temperature. As a result, the efficiency (PCE) increased to 18.33%. Subsequently, when the silicon-rich oxide (SiOx) material was implemented in the simulation as downconversion energy material on the outside of the cell, a power conversion efficiency (PCE) of 23.7% was obtained. The SiOX film obtained experimentally by sputtering obtained good photoluminescence, absorption coefficient, band gap, and transmittance characteristics before and after thermal annealing. These characteristics have been considered for the proposed device. It is indicated that the inverted perovskite solar cell of type pi-n: SiOx/ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Au has better J-V output values and EQ quantum efficiency than the perovskite solar cell without SiOx.