Jie Lu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Jie Lu has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
- Jinxin Liu
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
1 shared publication - Miaomiao Zheng
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
1 shared publication - Weiwei Cai
Key Laboratory of Education Ministry for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, China
1 shared publication - Xueao Zhang
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
1 shared publication - Yufeng Zhang
College of Physical Science and Technology, Xiamen University, Xiamen 361005, People’s Republic of China
1 shared publication
Latest Publications
- Open Access
- 30 November 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (23) , 3056
Impact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide
Although the synthesis of molybdenum disulfide (MoS2) on sapphire has made a lot of progress, how the substrate surface affects the growth still needs to be further studied. Herein, the impact of the sapphire step height on the growth of monolayer MoS2 through chemical vapor deposition (CVD) is studied. The results show that MoS2 exhibits a highly oriented triangular grain on a low-step (0.44–1.54 nm) substrate but nanoribbons with a consistent orientation on a high-step (1.98–3.30 nm) substrate. Triangular grains exhibit cross-step growth, with one edge parallel to the step edge, while nanoribbons do not cross steps and possess the same orientation as the step. Scanning electron microscopy (SEM) reveals that nanoribbons are formed by splicing multiple grains, and the consistency of the orientation of these grains is demonstrated with a transmission electron microscope (TEM) and second-harmonic generation (SHG). Furthermore, our CP2K calculations, conducted using the generalized gradient approximation and the Perdew–Burke–Ernzerhof (PBE) functional with D3 (BJ) correction, show that MoS2 domains prefer to nucleate at higher steps, while climbing across a higher step is more difficult. This work not only sheds light on the growth mechanism of monolayer MoS2 but also promotes its applications in electrical, optical, and energy-related devices.
- 30 November 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (23) , 3056
Open AccessImpact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide
Although the synthesis of molybdenum disulfide (MoS2) on sapphire has made a lot of progress, how the substrate surface affects the growth still needs to be further studied. Herein, the impact of the sapphire step height on the growth of monolayer MoS2 through chemical vapor deposition (CVD) is studied. The results show that MoS2 exhibits a highly oriented triangular grain on a low-step (0.44–1.54 nm) substrate but nanoribbons with a consistent orientation on a high-step (1.98–3.30 nm) substrate. Triangular grains exhibit cross-step growth, with one edge parallel to the step edge, while nanoribbons do not cross steps and possess the same orientation as the step. Scanning electron microscopy (SEM) reveals that nanoribbons are formed by splicing multiple grains, and the consistency of the orientation of these grains is demonstrated with a transmission electron microscope (TEM) and second-harmonic generation (SHG). Furthermore, our CP2K calculations, conducted using the generalized gradient approximation and the Perdew–Burke–Ernzerhof (PBE) functional with D3 (BJ) correction, show that MoS2 domains prefer to nucleate at higher steps, while climbing across a higher step is more difficult. This work not only sheds light on the growth mechanism of monolayer MoS2 but also promotes its applications in electrical, optical, and energy-related devices.