Sam Sullivan-Allsop

Recent work investigated graphene’s hydrogenation with independent control of the electric field, E , and charge density, n , in the crystal and showed that the process is controlled by n . Here, we demonstrate layer-selective conductor–insulator transitions in twisted bilayer graphene, driven by hydrogenation at fixed n under strong E . This process is accompanied by proton transport through the bilayer, enabling several parallel and configurable logic gates in the devices. Selectivity arises because the large twist angle decouples the two layers’ electronic systems, enabling independent control of their charge densities. Polarisation by the field then induces a charge imbalance at fixed total n , triggering hydrogenation when one of the layers’ charge densities reaches the threshold for monolayer hydrogenation. Our results introduce a new type of electrode-electrolyte interface in which electrochemical processes are controlled with two decoupled 2D electron gases, opening new design opportunities for energy and information processing devices.

The structure and dynamics of adsorbed atoms (adatoms) at solid-liquid interfaces determine the performance of advanced catalysts, electrochemical devices, molecular separation technologies, and metal extraction from waste streams. However, in situ investigations of atomically dispersed metals in various chemical environments have been prevented by insufficient imaging resolution and solvent incompatibility. In this study, we combined a specimen design that provides atomic resolution in liquid-phase electron microscopy with deep learning–enabled analysis to explore the interactions between gold adatoms, graphite support, and the solvent collectively. We tracked the locations of >10 ⁶ graphite-supported gold adatoms, dimers, and larger clusters in five solvents. Although their initial atomic dispersion was determined by the solvent polarity, fast drying kinetics at low temperature was required for optimizing catalytic performance.

Magnetic two‐dimensional materials are a promising platform for novel nano‐electronic device architectures. One such layered crystal is the ferromagnetic semiconductor chromium germanium telluride (Cr ₂ Ge ₂ Te ₆ ) which recently attracted interest due to its potential for spintronics and memory applications. Here we investigate its properties from the structural standpoint using atomic resolution Scanning Transmission Electron Microscopy (STEM) and present the first atomic resolution images down to its monolayer limit. We develop a novel technique that allows one to map the local tilt with unprecedented spatial resolution using only high‐resolution images, enabling mapping of the topography and morphological variation of atomically thin crystals. Using it, we show that the Cr ₂ Ge ₂ Te ₆ monolayer has an unusually large out‐of‐plane rippling, with local tilt variation reaching 20° over few nm length scales. We hypothesize that such a strongly buckled structure originates from both point and extended lattice defects which are more prevalent in monolayer crystals. In addition, we correlate the structural observations with the band structure measurements using Angle‐Resolved Photoemission Spectroscopy (ARPES). We believe that both the atomic scale insights we have gained on Cr ₂ Ge ₂ Te ₆ and our novel approach to nanoscale topography mapping will benefit the development of van der Waals heterostructures in both fundamental and applied research.

Transition metal diiodides such as FeI₂, NiI₂, and CoI₂ are an emerging class of 2D magnets exhibiting rich and diverse magnetic behavior, but their study at the monolayer limit has been severely hindered by fabrication challenges due to their air-sensitivity. Here, we introduce a polymer-free method for clean, rapid, and high-yield assembly of hermetically encapsulated suspended samples of air-sensitive monolayers. Applied to diiodides, it enables atomic resolution characterization of thin samples down to the monolayer limit using transmission electron microscopy. Our imaging, combined with complementary first-principles calculations, reveals an unusually small energy barrier between alternate stable stacking polytypes in few-layer films, enabling extrinsic control of the stacking phase. We also observe stable isolated iodine vacancies that do not aggregate to form extended structures and identify and verify the stability of the various edge configurations of thin samples. These results establish the structural characteristics of these materials in the thin limit and more broadly demonstrate the utility of our transfer platform for creating atomically clean suspended van der Waals heterostructures.

Standardisation of data collection and analysis is essential to enable commercialisation of 2D materials in a wide range of technologies. Selected area electron diffraction (SAED) in the transmission electron microscope (TEM) is one of the key methods for distinguishing monolayer from bilayer and few-layer graphene by comparing the 1st and 2nd order diffraction spot intensities. Yet there are many factors that can affect the reliability of data collection and interpretation, causing the measurement of monolayer samples to deviate from the literature boundary condition of I{-2110}/I{1-100}<1 for monolayer graphene. Here we present the results of a large interlaboratory SAED comparison study, where 15 international laboratories measured and analysed nominally identical samples of chemical vapour deposited (CVD) graphene. Large variations were observed in the measured ratios of diffraction spot intensities, with the largest variance associated with poor quality SAED data resulting from poor specimen handling and storage. To inform the reliable determination of monolayer thickness from SAED patterns we provide a description of best practice for specimen handling, TEM operation, data collection and analysis. This work was undertaken within VAMAS Technical Working Area (TWA) 41: Graphene and related 2D materials - Project 9, the results of which have been directly incorporated into ISO/TS 21356-2 for the characterisation of graphene sheets. We find that when this methodology is followed, monolayer graphene can be distinguished from bilayer or thicker material with high confidence where analysis of a single SAED pattern gives I{-2110}/I{1-100}<1.2, even in the absence of precise specimen tilting.

Van der Waals heterostructures are fabricated by layer-by-layer assembly of individual two-dimensional materials and can be used to create a wide range of electronic devices. However, current assembly techniques typically use polymeric supports, which limit the cleanliness—and thus the electronic performance—of such devices. Here, we report a polymer-free technique for assembling van der Waals heterostructures using flexible silicon nitride membranes. Eliminating the polymeric supports allows the heterostructures to be fabricated in harsher environmental conditions (incompatible with a polymer) such as at temperatures of up to 600 °C, in organic solvents and in ultra-high vacuum. The resulting heterostructures have high-quality interfaces without interlayer contamination and exhibit strong electronic and optoelectronic behaviour. We use the technique to assemble twisted-graphene heterostructures in ultra-high vacuum, resulting in a tenfold improvement in moiré superlattice homogeneity compared to conventional transfer techniques.