Xinyu Xie
Research Subjects
Research Interests
Xinyu Xie has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Choonghyun Lee
College of Electronic Engineering and Information Science, Zhejiang University, Hangzhou, China
1 shared publication - Hui Wang
China Nanhu Academy of Electronics and Information Technology, Jiaxing 314000, China
1 shared publication - Jiabin Qi
China Nanhu Academy of Electronics and Information Technology, Jiaxing 314000, China
1 shared publication - Wenhao Wu
China Nanhu Academy of Electronics and Information Technology, Jiaxing 314000, China
1 shared publication - Yi Zhao
College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
1 shared publication - Zongfang Liu
China Nanhu Academy of Electronics and Information Technology, Jiaxing 314000, China
1 shared publication
Latest Publications
- Open Access
- 20 December 2023
- Published by MDPI AG in Electronics
- Vol. 13 (1) , 24
The Excellent Bending Limit of a Flexible Si-Based Hf0.5Zr0.5O2 Ferroelectric Capacitor with an Al Buffer Layer
Flexible Si-based Hf0.5Zr0.5O2 (HZO) ferroelectric devices exhibit numerous advantages in the internet of things (IoT) and edge computing due to their low-power operation, superior scalability, excellent CMOS compatibility, and light weight. However, limited by the brittleness of Si, defects are easily induced in ferroelectric thin films, leading to ferroelectricity degradation and a decrease in bending limit. Thus, a solution involving the addition of an ultra-thin Al buffer layer on the back of the device is proposed to enhance the bending limit and preserve ferroelectric performance. The device equipped with an Al buffer layer exhibits a 2Pr value of 29.5 μC/cm2 (25.1 μC/cm2) at an outward (inward) bending radius of 5 mm, and it experiences a decrease to 22.1 μC/cm2 (16.8 μC/cm2), even after 6000 bending cycles at a 12 mm outward (inward) radius. This outstanding performance can be attributed to the additional stress generated by the dense Al buffer layer, which is transmitted to the Si substrate and reduces the bending stress on the Si substrate. Notably, the diminished bending stress leads to a reduced crack growth in ferroelectric devices. This work will be beneficial for the development of flexible Si-based ferroelectric devices with high durability, fatigue resistance, and functional mobility.
- 20 December 2023
- Published by MDPI AG in Electronics
- Vol. 13 (1) , 24
Open AccessThe Excellent Bending Limit of a Flexible Si-Based Hf0.5Zr0.5O2 Ferroelectric Capacitor with an Al Buffer Layer
Flexible Si-based Hf0.5Zr0.5O2 (HZO) ferroelectric devices exhibit numerous advantages in the internet of things (IoT) and edge computing due to their low-power operation, superior scalability, excellent CMOS compatibility, and light weight. However, limited by the brittleness of Si, defects are easily induced in ferroelectric thin films, leading to ferroelectricity degradation and a decrease in bending limit. Thus, a solution involving the addition of an ultra-thin Al buffer layer on the back of the device is proposed to enhance the bending limit and preserve ferroelectric performance. The device equipped with an Al buffer layer exhibits a 2Pr value of 29.5 μC/cm2 (25.1 μC/cm2) at an outward (inward) bending radius of 5 mm, and it experiences a decrease to 22.1 μC/cm2 (16.8 μC/cm2), even after 6000 bending cycles at a 12 mm outward (inward) radius. This outstanding performance can be attributed to the additional stress generated by the dense Al buffer layer, which is transmitted to the Si substrate and reduces the bending stress on the Si substrate. Notably, the diminished bending stress leads to a reduced crack growth in ferroelectric devices. This work will be beneficial for the development of flexible Si-based ferroelectric devices with high durability, fatigue resistance, and functional mobility.